D10LD20UR thru D10LD60UR - Thinki Semiconductor Co.,Ltd.

D10LD20UR thru D10LD60UR
®
Pb
D10LD20UR thru D10LD60UR
Pb Free Plating Product
10 Ampere Dual Doubler Polarity Super Fast Recovery Half Bridge Rectifiers
ITO-220AB
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Unit:mm
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Negative
Positive
Common Cathode Common Anode
Prefix "D10LC" Prefix "D10LC"
&Suffix "UR"
&Suffix "U"
Case
Case
Series Connection
Doubler
Tandem Polarity Tandem Polarity
Prefix "D10LD"
Prefix "D10LD"
&Suffix "UR"
&Suffix "U"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
SYMBOL
D10LD20UR D10LD40UR D10LD60UR UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
VDC
200
400
600
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current TC=100 C
IF(AV)
10.0
A
IFSM
100
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
VF
0.98
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
1.3
uA
100
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
65
Operating Junction and Storage
Temperature Range
V
5.0
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
1.7
R JC
2.2
TJ, TSTG
-55 to +150
pF
o
C/W
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.06
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
D10LD20UR thru D10LD60UR
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
100
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
8
6
4
2
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
50
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
D10LD20UR
D10LD40UR
5
D10LD60UR
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.06
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/