D92-02 ® Pb Free Plating Product Ultrafast Recovery Rectifier TO-3P/TO-247AD Features 0.142(3.60) 0.125(3.20) Ultrafast Recovery Time 0.199(5.05) 0.175(4.45) 0.600(15.25) 0.580(14.75) 0.839(21.30) 0.819(20.80) Soft Recovery Characteristics Low Recovery Loss Low Forward Voltage High Surge Current Capability Low Leakage Current 0.095(2.40) 0.087(2.20) 0.070(1.80) 0.126(3.20) 0.110(2.80) 0.050(1.25) 0.045(1.15) APPLICATIONS · · · · · · · Unit: inch (mm) 0.640(16.25) 0.620(15.75) 0.170(4.30) 0.145(3.70) 0.798(20.25) 0.777(19.75) · · · · · · Pb D92-02 Freewheeling, Snubber, Clamp 0.030(0.75) 0.017(0.45) Inversion Welder 0.225(5.70) 0.204(5.20) PFC 0.225(5.70) 0.204(5.20) Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper ABSOLUTE MAXIMUM RATINGS Symbol Doubler Negative Positive D92-02 UPS TC=25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 220 V VRRM Maximum Repetitive Reverse Voltage 220 V IF(AV) Average Forward Current TC=110°C, Per Diode 10 A TC=110°C, Per Package 20 A IF(RMS) RMS Forward Current TC=110°C, Per Diode 14 A IFSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 100 A PD Power Dissipation 83 W TJ Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m RθJC Thermal Resistance Junction-to-Case 1.5 °C /W 6.0 g Weight ELECTRICAL CHARACTERISTICS Symbol Parameter IRM Reverse Leakage Current VF Forward Voltage trr TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit µA mA VR=220V -- -- 50 VR=220V, TJ=125°C -- -- 1 IF=10A -- 0.86 0.95 V IF=10A, TJ=125°C -- -- 0.80 V Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 25 -- ns trr Reverse Recovery Time VR=100V, IF=10A -- 32 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 2.1 -- A trr Reverse Recovery Time VR=100V, IF=10A -- 45 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 5 -- A Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ D92-02 ® 30 100 VR=100V TJ =125°C 25 80 IF=20A TJ =125°C trr (ns) IF (A) 20 15 60 40 10 IF=10A TJ =25°C 20 IF=5A 5 0 0 0 0 0.8 1.2 0.6 1.0 VF（V） Fig1. Forward Voltage Drop vs Forward Current 0.2 0.4 25 400 600 800 1000 diF/dt（A/μs） Fig2. Reverse Recovery Time vs diF/dt 250 VR=100V TJ =125°C VR=100V TJ =125°C 20 200 15 IF=20A IF=10A IF=5A 10 Qrr (nc) IRRM (A) 200 150 IF=20A IF=10A 100 IF=5A 50 5 0 0 0 400 600 1000 800 diF/dt（A/μs） Fig3. Reverse Recovery Current vs diF/dt 200 1.2 0 200 400 600 800 1000 diF/dt（A/μs） Fig4. Reverse Recovery Charge vs diF/dt 10 1 1 ZthJC (K/W) 0.8 Kf trr 0.6 IRRM 10-1 0.4 Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 Qrr 0.2 0 0 25 50 100 125 150 75 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature 10-3 -4 -2 -1 10-3 10 10 10 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/