® MURF3020PTD thru MURF3060PTD Pb MURF3020PTD thru MURF3060PTD Pb Free Plating Product 30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes TO-3P(H)IS Features Unit: inch (mm) .217 (5.5) .130 (3.3) .610 (15.5) Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds .177 (4.5) .378 (9.6) .965 (24.5) .177 (4.5) .720 (18.3) Min Mechanical Data Cases: Insulated/Isolated TO-3P(H)IS Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 gram approximately .215 (5.47) Positive Common Cathode Suffix "PT" .138 (3.5) Negative Common Anode Suffix "PTA" Doubler Tandem Polarity Suffix "PTD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MURF3020PT MURF3040PT MURF3060PT MURF3020PTA MURF3040PTA MURF3060PTA UNIT MURF3020PTD MURF3040PTD MURF3060PTD Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V VDC 200 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified o Current TC=125 C IF(AV) 30.0 A IFSM 300 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 15.0 A VF 0.98 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.3 1.7 V 10 uA 500 uA Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical junction Capacitance (Note 2) CJ 150 pF TJ, TSTG -55 to +150 Operating Junction and Storage Temperature Range o C NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1. 0A Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ® MURF3020PTD thru MURF3060PTD FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 250 200 150 100 50 0 0 50 100 150 1 LEAD TEMPERATURE, C 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 150 MURF3040PTD MURF3020PTD 15 MURF3060PTD 1.0 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o 1.4 o TJ=125 C 10 1 0.1 o TJ=25 C 0.01 1.6 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS . Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. . . Page 2/2 http://www.thinkisemi.com/