MM60FU030PC ® Pb MM60FU030PC Pb Free Plating Product 60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode TO-3PB/TO-3PN APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE Cathode · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics Anode Base Backside · Low Recovery Loss · Low Forward Voltage — · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION MM60FU030PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 300 V VRRM Maximum Repetitive Reverse Voltage 300 V IF(AV) Average Forward Current TC=110°C, Per Diode 30 A TC=110°C, Per Package 60 A IF(RMS) RMS Forward Current TC=110°C, Per Diode 42 A IFSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 480 A PD Power Dissipation 156 W TJ Junction Temperature -55to +150 °C TSTG Storage Temperature Range -55 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m Rth(J-C) Thermal Resistance Junction-to-Case, Per Diode 0.8 °C /W 6 g Weight ELECTRICAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit VR=300V -- -- 10 µA VR=300V, TJ=125°C -- -- 10 mA IF=30A -- 1.25 1.8 V IF=30A, TJ=125°C -- 1.12 -- V IRM Reverse Leakage Current VF Forward Voltage trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 22 -- ns trr Reverse Recovery Time VR=150V, IF=30A -- 35 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 2.5 -- A trr Reverse Recovery Time VR=150V, IF=30A -- 70 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 6.8 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/3 http://www.thinkisemi.com/ MM60FU030PC ® 60 100 IF=60A 50 80 40 TJ =125°C trr (ns) IF (A) VR=150V TJ =125°C 30 60 IF=30A 40 IF=15A 20 TJ =25°C 20 10 0 0 0 0.9 1.2 1.8 1.5 VF（V） Fig1. Forward Voltage Drop vs Forward Current 0.3 0.6 24 200 400 600 800 1000 diF/dt（A/μs） Fig2. Reverse Recovery Time vs diF/dt 600 VR=150V TJ =125°C 20 VR=150V TJ =125°C 500 16 400 IF=60A 12 IF=30A Qrr (nc) IRRM (A) 0 IF=60A 300 IF=30A IF=15A IF=15A 8 200 4 100 0 0 0 400 600 1000 800 diF/dt（A/μs） Fig3. Reverse Recovery Current vs diF/dt 200 1.2 0 200 400 600 800 1000 diF/dt（A/μs） Fig4. Reverse Recovery Charge vs diF/dt 10 1 1 ZthJC (K/W) Kf 0.8 0.6 trr 0.4 IRRM 0.2 Qrr -1 10 Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 0 0 25 50 100 125 150 75 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 10-3 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ MM60FU030PC ® IF trr IRRM dIF/dt 0.25 IRRM Qrr 0.9 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/