US6T5 Transistors Low frequency amplifier US6T5 (6) (1) 0.2 zFeatures 1) A collector current is large. 2) VCE(sat) : max. −370mV At lc= −1.5A / lB= −75mA Collector current Power dissipation Junction temperature Range of storage temperature 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −30 −30 −6 −2 −4 400 1.0 150 −55 to +150 0.15Max. Abbreviated symbol : T05 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 1.7 1.3 (2) 2.0 (3) (5) 0.85Max. 0.3 (4) 0.65 0.65 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver Unit V V V A A ∗1 mW ∗2 W ∗3 °C °C (6) (5) (4) (1) (2) (3) ∗1 Single pulse, Pw=1ms ∗2 Each terminal mounted on a recommended ∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff curent Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −180 − 280 20 Max. − − − −100 −100 −370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −30V VEB= −6V IC= −1.5A, IB= −75mA VCE= −2V, IC= −200mA VCE= −2V, IE=200mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Rev.A 1/2 US6T5 Transistors zPackaging specifications Taping package Type TR Code Basic ordering unit(pieces) 3000 US6T5 VCE=−2V Pulsed Ta=25 C Ta=−40 C 100 10 0.001 0.01 0.1 1 10 10 1 0.1 Ta=25 C 0.01 0.001 1 10 Ta=100 C Ta=25 C 1 Ta=−40 C 0.1 0.1 1 1 Fig.4 Grounded emitter propagation characteristics IC/IB=50/1 IC/IB=20/1 0.1 0.001 IC/IB=10/1 0.01 0.1 1 10 Fig.3 Base-emitter saturation voltage vs. collector current 10000 Ta=25 C VCE=−2V f=100MHz 100 Ta=25 C VCE=−2V IC/IB=20/1 Pulsed 1000 tstg 100 tf tdon 10 tr 10 0.01 10 1000 Ta=25 C Pulsed COLLECTOR CURRENT : IC (A) 1000 VBE=−2V Pulsed TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT :IC (A) 0.1 Fig.2 Collector-emitter saturation voltage vs. collector current BASE TO EMITTER CURRENT : VBE (V) COLLECTOR CURRENT :IC (A) 0.01 10 COLLECTOR CURRENT : IC (A) Fig.1 DV current gain vs. collector current 0.01 Ta=−40 C Ta=100 C COLLECTOR CURRENT : IC (A) 10 IC/IB=20/1 Pulsed SWITCHINGTIME : (ns) DC CURRENT GAIN : hFE Ta=100 C BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 0.1 1 10 1 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.5 Gain bandwidth product vs. emitter curent Fig.6 Switching time 10 IC=0A f=1MHz Ta=25 C Cib 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1