ROHM RB160SS-40

Data Sheet
Schottky Barrier Diode
RB160SS-40
lApplications
Small current rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.2
0.5
1.6±0.05
lFeatures
1)Small power mold type (KMD2)
2)High reliability
3)Low IR
lConstruction
Silicon epitaxial planer
1.2±0.05
0.8
0.8±0.05
0.6±0.03
0.7±0.05
0.4±0.05
0～0.03
KMD2
lStructure
ROHM : KMD2
JEDEC :JEITA : dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive peak)
40
VR
Reverse voltage (DC)
40
Average rectified forward current (*1)
1
Io
IFSM
Forward current surge peak(60Hz･1cyc.)
5
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1) On the Glass epoxy substrate , 180°Half Sine wave
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
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© 2011 ROHM Co., Ltd. All rights reserved.
Min.
-
Typ.
0.50
3.00
1/4
Unit
V
V
A
A
C
C
Max.
0.55
50.00
Unit
V
μA
Conditions
IF=0.7A
VR=40V
2011.10 - Rev.A
Data Sheet
RB160SS-40
10000
10
Tj=150°C
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
1000
1
Tj=150°C
Tj=125°C
Tj=25°C
Tj=75°C
0.1
Tj=125°C
100
Tj=75°C
10
1
Tj=25°C
0.01
0.1
0
200
400
600
800
0
10
20
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
Tj=25°C
100
10
Tj=25°C
IF=0.7A
n=20pcs
600
AVE:516.3mV
500
400
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
150
Tj=25°C
VR=40V
n=20pcs
AVE:3.15mA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
140
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT: IR(mA)
40
700
1000
10
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
130
AVE:133.2pF
120
110
1
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
30
REVERSE RECOVERY TIME:trr(ns)
30
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RB160SS-40
25
20
AVE:15.8A
15
10
1cyc
IFSM
5
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.10×IR
n=10pcs
25
20
15
AVE:8.6ns
10
5
8.3ms
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc.
10
time
10
1
1
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1.2
Sin(θ＝180)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
D.C.
D=1/2
1
Rth(j-a)
100
Rth(j-c)
10
On glass-epoxy substrate
soldering land 50mm□
1
0.001
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RB160SS-40
2
2
Io
0A
0V
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
1.5
D.C.
1
D=1/2
Sin(θ＝180)
0.5
0
VR
1.5
T
D=t/T
VR=20V
Tj=150°C
D=1/2
1
Sin(θ＝180)
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
AVE：4.35kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A