IC MOSFET Diodes Transistors SMD Type Product specification 5N20V TSSOP-8 Unit: mm Features Typical RDS(on)=0.03 @ 4.5V Typical RDS(on)=0.037 @ 2.7V Ultra Low Threshold Standard Outline For Esay Automated Surface Mount Assembly Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 20 V Drain-gate Voltage (RGS = 20 kÙ) VDGR 20 V Gate- source Voltage VGS Drain-source Voltage (VGS = 0) ID Drain Current (continuous) at TC = 25 12 V 5 A ID 3 A Drain Current (pulsed) *1 IDM 20 A Total Dissipation at TC = 25 PD 1.5 W Drain Current (continuous) at TC = 100 Thermal Resistance Junction-PCB *3 Rthj-pcb 100 /W Thermal Resistance Junction-PCB *2 Rthj-pcb 83.5 /W Tj -55 to 150 Tstg -55 to 150 Operating Junction Temperature Storage temperature *1 Pulse width limited by safe operating area. *2 When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t 10 sec *3 When Mounted on minimum recommended footprint http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 MOSFET IC Diodes Transistors SMD Type Product specification 5N20V Electrical Characteristics Ta = 25 Parameter Symbol Drain-source Breakdown Voltage VDSS Zero Gate Voltage Drain Current (VGS = 0) IDSS Gate-body Leakage Current (VDS = 0) IGSS Gate Threshold Voltage VGS(th) Static Drain-source On Resistance RDS(on) Forward Transconductance gfs *1 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-off Delay Time td(off) Fall Time tf Off-voltage Rise Time Testconditons Min ID = 250ìA, VGS = 0 tf Cross-over Time tc VSD *1 Forward On Voltage Max 20 Unit V VDS = Max Rating 1 A VDS = Max Rating TC = 125 10 A VGS = 12V 100 VDS = VGS ID = 250 ìA 0.6 0.030 0.040 VGS = 2.7 V ID = 2.5 A 0.037 0.045 VDS=15 V ID = 2.5 A VDS = 15V f = 1 MHz, VGS = 0 nA V VGS = 4.5 V ID = 2.5 A 9.5 S 460 pF 200 pF 50 pF VDD = 10 V ID = 2.5 A 7 ns RG = 4.7 Ù VGS = 4.5 V 33 ns 8.5 VDD= 16V ID= 5A VGS=4.5V 11.5 nC 1.8 nC 2.4 nC VDD = 10 V ID = 2.5 A 27 ns RG = 4.7Ù, VGS = 4.5 V 10 ns 26 ns 11 ns 21 ns td(Voff) Fall Time Typ Vclamp = 16 V ID = 5 A,RG = 4.7Ù, VGS = 4.5 V ISD = 5 A VGS = 0 1.2 V Reverse Recovery Time trr ISD = 5 A di/dt = 100A/ìs 26 ns Reverse Recovery Charge Qrr VDD = 10 V Tj = 150 13 nC Reverse Recovery Current IRRM Source-drain Current Source-drain Current (pulsed) *1 Pulsed: Pulse duration = 300 1 A ISD 5 A ISDM *2 20 A s, duty cycle 1.5 %. *2 Pulse width limited by safe operating area. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2