Transistors IC MOSFET SMD Type Product specification KVN4525E6 Unit: mm Features High voltage Low on-resistance Fast switching speed Low gate drive Low threshold 1 pin mark Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-Source Voltage Parameter VDSS 250 V Gate Source Voltage VGS 40 V Continuous Drain Current (VGS=10V; TA=25 )*1 ID 230 mA (VGS=10V; TA=70 )*1 ID 183 mA Pulsed Drain Current *3 IDM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 *1 A IS 1.1 A ISM 1.44 A 1.1 W 8.8 mW/ PD Linear Derating Factor Operating and Storage Temperature Range Tj:Tstg -55 to +150 Junction to Ambient*1 R JA 113 /W Junction to Ambient*2 R JA 65 /W *1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions *2 For a device surface mounted on FR4 PCB measured at t 5 secs. *3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC MOSFET SMD Type Product specification KVN4525E6 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons ID=1mA, VGS=0V Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS VDS=250V, VGS=0V Gate-Body Leakage IGSS VGS= 40V, VDS=0V Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance *1 RDS(on) ID=1mA, VDS= VGS Min Typ 250 285 35 1 0.8 Max V 500 100 1.4 1.8 VGS=10V, ID=500mA 5.6 8.5 VGS=4.5V, ID=360mA 5.9 9.0 6.4 9.5 VGS=2.4V, ID=20mA VDS=10V,ID=0.3A 0.3 Unit nA nA V 0.475 S 72 pF 11 pF 3.6 pF Forward Transconductance *3 gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) 1.25 ns Rise Time 1.70 ns 11.40 ns tf 3.5 ns Qg 2.6 3.65 0.2 0.28 nC 0.5 0.7 nC 0.97 V tr Turn-Off Delay Time td(off) Fall Time Total Gate Charge VDS=25 V, VGS=0V,f=1MHz Gate-Source Charge Qgs Gate Drain Charge Qgd Diode Forward Voltage*! VSD VDD =30V, ID=360mA,RG=50 , Vqs=10V *2 VDS=25V,VGS=10V,ID=360mA*2 Tj=25 , IS=360mA,VGS=0V nC Reverse Recovery Time *3 trr Tj=25 , IF=360mA, 186 260 ns Reverse Recovery Charge *3 Qrr di/dt= 100A/ 34 48 nC *! Measured under pulsed conditions. Width=300 s. Duty cycle s 2% . *2 Switching characteristics are independent of operating junction temperature. *3 For design aid only, not subject to production testing. Marking Marking N52 http://www.twtysemi.com [email protected] 4008-318-123 2of 2