SKM 600GB126D ... .* - $ Absolute Maximum Ratings Symbol Conditions IGBT ' / .* - " / ,*+ - # 2 + # 1++ # 6 .+ / ,.* - ,+ 9 .* - 2;+ # 1+ - <2+ # 1++ # / ,*+ - .11+ # .* - 2;+ # 1+ - <2+ # 1++ # .11+ # *++ # / @ 2+ === A ,*+ - @ 2+ === A ,.* - 2+++ "34.!" ++ 7 5 ) .+ 7 ' 8 ,.++ Inverse Diode ": / ,*+ - ":34 ":34.!": ":'4 ,+ 7 = SKM 600GAL126D Freewheeling Diode ! " Typical Applications* # $ %&' $ Remarks "( ) *++# ,++ - ": / ,*+ - ":34 ":34.!": ":'4 ,+ 7 = / ,*+ - Module ">34'? # , = .* - $ Characteristics Symbol Conditions IGBT 5> ? 5 " , # "' 5 + ' / .* - >? max. Units * *1 * + 5 ,* / .* - , ,. / ,.* - +; ,, / .*- ,1 .2 B / ,.*- .1 <2 B " 2++ # 5 ,* / .*- = .* 5 + # # ,C .,* / ,.*- = . .2* , 4D <. ,, : : .. : E5 5 @1 @ A.+ < ++ 35 / - ,11 F .;+ + <; C+ 1+ G $>? $>? 35 . B 35 . B 1 typ. +. GAL min. / ,.* - + GB 1+ - SKM 600GB126D Features ,.++ + 5' Trench IGBT Module Units .* - "34 SEMITRANS® 3 Values 3 >/@? ++ " 2++# / ,.* - 5 6 ,* 2 "5H 06-10-2009 NOS G ++** IJK © by SEMIKRON SKM 600GB126D ... Characteristics Symbol Conditions Inverse diode : ": 2++ #7 5 + :+ : ® SEMITRANS 3 Trench IGBT Module "334 E ": 2++ # $J$ C ++ #J9 5 @,* 7 ++ 3 >/@?( $$ min. typ. max. Units / .* - = , ,1 / ,.* - = , ,1 / .* - , ,, / ,.* - +1 +; / .* - ,* ,1 B / ,.* - . .< B / ,.* - 2C* ; # 9 2, G +,.* IJK Freewheeling Diode SKM 600GB126D SKM 600GAL126D : ": 2++ #7 5 + :+ : Features ! " Typical Applications* # $ %&' $ Remarks "( ) *++# ,++ - "334 E ": 2++ # $J$ C ++ #J9 5 @,* 7 ++ 3 >/@?:( $$ / .* - = , ,1 / ,.* - = , ,1 / .* - , ,, / ,.* - +1 +; / .* - ,* ,1 / ,.* - . .< / ,.* - 2C* ; # 9 2, G +,.* IJK Module L 3MAM ,* = @ 3 >@? $ 4 N 4 4 4 .+ .* - +<* B ,.* - +* B ++<1 IJK < * O .* * O <.* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. GB 2 GAL 06-10-2009 NOS © by SEMIKRON SKM 600GB126D ... SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 3 3 3 3 , . < 2 , . < <1 ,< <2 + ++1< +++; +++.2 NJK NJK NJK NJK 2 ++++. 3 3 3 3 , . < 2 , . < C* <; ;* ,* ++<.C ++,+, +++. NJK NJK NJK NJK 2 ++++< Zth(j-c)D Trench IGBT Module SKM 600GB126D SKM 600GAL126D Features ! " Typical Applications* # $ %&' $ Remarks "( ) *++# ,++ - GB 3 GAL 06-10-2009 NOS © by SEMIKRON SKM 600GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 600GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 600GB126D ... UL Recognized File no. E 63 532 ( * 5H 6 ( * 5#L ( *C 06-10-2009 NOS © by SEMIKRON