SK50GBB066T

SK50GBB066T
) 0- 1, 2 Absolute Maximum Ratings
Symbol Conditions
IGBT
(34
9:
5 ) 0- 1
5 ) /8- 1
9:)
0
7++
(
7+
#
) 8+ 1
-+
#
/++
#
; 0+
(
5 ) /-+ 1
7
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) 0- 1
-7
#
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@@
#
7+
#
*0+
#
( ) *7+ (< (!3 = 0+ (<
(34 > 7++ (
Units
) 0- 1
(!34
SEMITOP® 3
Values
Inverse Diode
IGBT Module
%
%9:
SK50GBB066T
%4:
5 ) /8- 1
%9:)
0
%
) /+ < 2A
5 ) /-+ 1
Module
#
9:4
A5
Features
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#$ " %&
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#, / C
34
!34
(!3 ) (3,
) +,E #
(!3 ) + (, (3 ) (34
(3 ) + (, (!3 ) 0+ (
1
[email protected]+ CCC D/0-
1
0-++
(
) 0- 1, 2 Characteristics
Symbol Conditions
IGBT
(!3
[email protected]+ CCC D/8-
min.
typ.
max.
-
-,E
7,-
Typical Applications*
Remarks
( ) *+++( #,-+.,/
3
(3
#
5 ) /-+ 1
#
5 ) 0- 1
7++
3
#
+,F
5 ) /-+ 1
+,E
/
(
5 ) 0-1
//
/-
G
5 ) /-+1
/8
0/
G
5 ) 0-1
AC
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/,E-
(
5 ) /-+1
AC
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0,+-
) / :.
*,/
+,0
%
%
+,+F*
%
(!3) B8(CCCD/-(
0-+
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9! ) /7 G
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0E
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0,0
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@-
J
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J
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KI&
(!3 ) /- (
) -+ #, (!3 ) /- (
(3 ) 0-, (!3 ) + (
3
95B
#
5 ) 0- 1
H!
(
5 ) 0- 1
5 ) /-+ 1
(3+
Units
!
( ) *++(
) -+#
5 ) /-+ 1
(!3) B8ID/-(
/,/
(
(
GBB-T
1
09-11-2011 DIL
© by SEMIKRON
SK50GBB066T
Characteristics
Symbol Conditions
Inverse Diode
(% ) (3
%
) -+ #< (!3 ) + (
(%+
%
®
SEMITOP 3
IGBT Module
SK50GBB066T
min.
typ.
5 ) 0- 1
AC
/,-
5 ) /-+ 1
AC
/,-
max.
Units
(
(
5 ) 0- 1
/
/,/
(
5 ) /-+ 1
+,F
/
(
5 ) 0- 1
/+
/0
G
5 ) /-+ 1
/0
/@
G
5 ) /-+ 1
@@
@,E
#
?
H
% ) -+ #
I ) [email protected]*E #I?
3
() *++(
+,80
J
95B
/,8
KI&
:
L
99:
2
0,0-
0,-
'
*+
@F*;-M
G
Temperature sensor
9/++
)/++1 90-)-LG
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
! "
#$ " %&
' component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
Remarks
( ) *+++( #,-+.,/
GBB-T
2
09-11-2011 DIL
© by SEMIKRON
SK50GBB066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
09-11-2011 DIL
© by SEMIKRON
SK50GBB066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
09-11-2011 DIL
© by SEMIKRON
SK50GBB066T
Ul recognized
file no. E 63 532
FE 4 , N, O 0
FE
5
!B
09-11-2011 DIL
© by SEMIKRON