SKM 200GB123D

SKM 200GB123D
. 5 16 7* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
*8
.9 5 16 7*
&*
.9 5 /62 7*
/122
122
+
. 5 ;6 7*
/;2
+
022
+
> 12
/2
B
. 5 16 7*
122
+
. 5 ;2 7*
/02
+
022
+
.9 5 /62 7*
/DD2
+
. 5 16 7*
1$2
+
. 5 ;2 7*
/;2
+
D22
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/;22
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622
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7*
.
' D2CCCE /16
7*
1622
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.9 5 /62 7*
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SKM 200GB123D
&(
5 /2 ? C
SKM 200GAL123D
Freewheeling Diode
SKM 200GAR123D
&(
.9 5 /62 7*
&(<
&(<51%&(
&(
5 /2 ? C
Features
.9 5 /16 7*
Inverse Diode
IGBT Modules
! " #
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-
.
/0 12 Typical Applications*
+* 34
.9 5 /62 7*
Module
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. 5 16 7* #
Characteristics
Symbol Conditions
IGBT
=8
=8 5 *8 &* 5 $ +
&*8
=8 5 2 *8 5 *8
*82
*8
=8 5 /6 .9 5 16 7*
max.
Units
D6
66
$6
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20
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typ.
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8
##
#
GAL
min.
.9 5 16 7*
# 5 / !I
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GB
Units
. 5 16 7*
&*<
SEMITRANS® 3
Values
** 5 $22
&*5 /62+
.9 5 /16 7*
=8 5 '/6
/622
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16
K
112
/22
1D
$22
F2
D22
122
;22
/22
/F
&=-.
L
L
22G
MNO
GAR
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
Characteristics
Symbol Conditions
Inverse Diode
( 5 8*
&( 5 /62 +? =8 5 2 (2
min.
typ.
max.
Units
.9 5 16 7*
C
1
16
.9 5 /16 7*
C
/;
.9 5 16 7*
//
/1
.9 5 /16 7*
(
.9 5 16 7*
$
;F
.9 5 /16 7*
®
SEMITRANS 3
IGBT Modules
&<<
J
&( 5 /62 +
N 5 /622 +NB
8
=8 5 '/6 ? 5 $22
<9',
H
H
.9 5 /16 7*
G2
;
+
B*
$$
L
216
MNO
16
Freewheeling Diode
( 5 8*
SKM 200GB123D
&( 5 122 +? =8 5 2 (2
SKM 200GAL123D
.9 5 16 7*
C
1
.9 5 /16 7*
C
/;
.9 5 16 7*
//
/1
D6
$6
.9 5 /16 7*
SKM 200GAR123D
(
.9 5 16 7*
.9 5 /16 7*
Features
! " #
$ % &
'
#
( ) # *+ & "
,*- , *
-
.
/0 12 Typical Applications*
+* 34
GB
2
GAL
&<<
J
&( 5 122 +
N 5 1222 +NB
8
=8 5 2 ? ** 5 $22 <9'(,
.9 5 /16 7*
/12
//
+
B*
L
2/;
MNO
Module
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/6
C '
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Q $
$ D
12
!
.5 16 7*
206
H
.5 /16 7*
26
H
220;
MNO
0
6
16
6
016
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GAR
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
<
<
<
<
5/
51
50
5D
5/
51
50
6G
10
$;
/1
220
222;F
2221
QNO
QNO
QNO
QNO
5D
22221
SKM 200GAL123D
<
<
<
<
5/
51
50
5D
5/
51
50
/F2
$$
/1
1
220D;
222F1
22FF
QNO
QNO
QNO
QNO
SKM 200GAR123D
5D
22221
SEMITRANS® 3
Zth(j-c)D
IGBT Modules
SKM 200GB123D
Features
! " #
$ % &
'
#
( ) # *+ & "
,*- , *
-
.
/0 12 Typical Applications*
+* 34
GB
3
GAL
GAR
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
UL Recognized
File 63 532
* , 6$
* , 6$
6
=-
* , 6F
6$
13-01-2009 NOS
=+
* , 6;
6$
=+<
© by SEMIKRON