SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules SKM300GBD12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 56 A Tc = 80 °C 43 A 50 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* IFRM IFRM = 3xIFnom 150 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 180 A -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj Freewheeling diode IF IFnom IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) • Current source inverter Tstg Remarks Visol • The Fig.1 to Fig.9 are based on measurements of the SKM300GB12T4 • The series diodes (FWD) have the data of the inverse diodes of SKM400GB12T4 • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Tj = 175 °C Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 300 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 3.50 4.00 m 5.17 5.50 m 5.8 6.5 V 4.0 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 18.6 nF f = 1 MHz 1.16 nF f = 1 MHz 1.02 nF 1700 nC 2.5 GBD © by SEMIKRON Rev. 3 – 03.09.2013 1 SKM300GBD12T4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMITRANS® 3 Fast IGBT4 Modules SKM300GBD12T4 Rth(j-c) rF • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* Qrr Err Rth(j-c) • Current source inverter IRRM Remarks Qrr • The Fig.1 to Fig.9 are based on measurements of the SKM300GB12T4 • The series diodes (FWD) have the data of the inverse diodes of SKM400GB12T4 • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° chiplevel Err Rth(j-c) typ. chiplevel max. Unit 200 ns Tj = 150 °C 44 ns Tj = 150 °C 27 mJ Tj = 150 °C 450 ns Tj = 150 °C 90 ns Tj = 150 °C 29 mJ 0.11 K/W Tj = 25 °C 2.41 2.74 V Tj = 150 °C 2.45 2.79 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 22.2 24.8 m 31.0 33.8 m Tj = 150 °C IF = 50 A Tj = 150 °C di/dtoff = 7300 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C per IGBT Inverse diode VF = VEC IF = 50 A VGE = 0 V chiplevel VF0 chiplevel IRRM Features Conditions VCC = 600 V IC = 300 A VGE = ±15 V RG on = 1.5 RG off = 1.5 di/dton = 7500 A/µs di/dtoff = 3350 A/µs A µC mJ 0.94 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 m 3.1 3.4 m Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 8800 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode 450 A 68 µC 30.5 mJ 0.14 K/W 20 nH Module LCE RCC'+EE' 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt TC = 25 °C 0.25 TC = 125 °C 0.5 0.02 to terminals M6 m m 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GBD 2 Rev. 3 – 03.09.2013 © by SEMIKRON SKM300GBD12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 03.09.2013 3 SKM300GBD12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 03.09.2013 © by SEMIKRON SKM300GBD12T4 SEMITRANS 3 GBD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 03.09.2013 5