SKM400GAR12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 612 A Tc = 80 °C 467 A 400 A ICnom ICRM SEMITRANS® 3 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj = 125 °C Inverse diode SKM400GAR12V IF Tj = 175 °C IFnom Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • • • • Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.75 2.20 V Tj = 150 °C 2.20 2.50 V Tj = 25 °C 0.94 1.04 V Tj = 150 °C 0.88 0.98 V Tj = 25 °C 2.02 2.90 m 3.30 3.80 m 6 6.5 V 0.1 0.3 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 16 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres QG VCE = 25 V VGE = 0 V Tj = 150 °C Tj = 25 °C 5.5 Tj = 150 °C mA f = 1 MHz 24.0 nF f = 1 MHz 2.36 nF f = 1 MHz VGE = - 8 V...+ 15 V RGint 2.36 nF 4400 nC 1.88 GAR © by SEMIKRON Rev. 0 – 19.07.2012 1 SKM400GAR12V Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMITRANS® 3 SKM400GAR12V Rth(j-c) Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • • • • Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Conditions VCC = 600 V IC = 400 A VGE = ±15 V RG on = 3 RG off = 3 di/dton = 9800 A/µs di/dtoff = 5000 A/µs du/dtoff = 7600 V/ µs per IGBT IRRM Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) chiplevel typ. max. Unit 350 ns Tj = 150 °C 60 ns Tj = 150 °C 39 mJ Tj = 150 °C 700 ns Tj = 150 °C 65 ns Tj = 150 °C 42 mJ 0.072 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 9500 A/µs T = 150 °C j VGE = 15 V T j = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C 2.0 2.6 0.9 1.1 V 2.3 2.5 m 3.1 3.4 m 450 A 58 µC 26 mJ 0.14 K/W Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 m 3.1 3.4 m Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 9500 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per Diode 450 A 58 µC 26 mJ 0.14 K/W Module LCE RCC'+EE' 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.25 m TC = 125 °C 0.5 m 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GAR 2 Rev. 0 – 19.07.2012 © by SEMIKRON SKM400GAR12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 19.07.2012 3 SKM400GAR12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 – 19.07.2012 © by SEMIKRON SKM400GAR12V SEMITRANS 3 GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 19.07.2012 5