SEMiX302KT16s - TOTEM ELECTRO

SEMiX302KT16s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Chip
IT(AV)
sinus 180°
Tc = 85 °C
300
A
Tc = 100 °C
230
A
Tj = 25 °C
9300
A
A
ITRMS
ITSM
SEMiX® 2s
Rectifier Thyristor Module
SEMiX302KT16s
i2t
10 ms
10 ms
Tj = 130 °C
8000
A
Tj = 25 °C
432000
A²s
Tj = 130 °C
320000
A²s
VRSM
1700
V
VRRM
1600
V
VDRM
1600
V
(di/dt)cr
Tj = 130 °C
130
A/µs
(dv/dt)cr
Tj = 130 °C
1000
V/µs
-40 ... 130
°C
-40 ... 125
°C
1 min
4000
V
1s
4800
V
Tj
Module
Features
Tstg
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Visol
Typical Applications*
Characteristics
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Symbol
AC sinus 50Hz
Conditions
min.
typ.
max.
Unit
Chip
VT
Tj = 25 °C, IT = 900 A
1.7
V
VT(TO)
Tj = 130 °C
0.85
V
rT
Tj = 130 °C
1.7
mΩ
75
mA
IDD;IRD
Tj = 130 °C, VDD = VDRM; VRD = VRRM
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
µs
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 130 °C
150
µs
IH
Tj = 25 °C
150
500
mA
IL
Tj = 25 °C, RG = 33 Ω
300
1000
mA
VGT
Tj = 25 °C, d.c.
3
V
IGT
Tj = 25 °C, d.c.
200
mA
VGD
Tj = 130 °C, d.c.
0.25
V
IGD
Tj = 130 °C, d.c.
10
mA
Rth(j-c)
Rth(j-c)
Rth(j-c)
continuous DC
sin. 180°
rec. 120°
per thyristor
K/W
per diode
K/W
per thyristor
0.091
K/W
per diode
K/W
per thyristor
K/W
per diode
K/W
Module
Rth(c-s)
per chip
K/W
per module
0.045
K/W
Ms
to heat sink (M5)
3
5
Mt
to terminals (M6)
2.5
5
Nm
5 * 9,81
m/s²
a
w
250
Nm
g
KT
© by SEMIKRON
Rev. 3.0 – 13.08.2015
1
SEMiX302KT16s
Fig. 1L: Power dissipation per thyristor/diode vs. on-state
current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 3.0 – 13.08.2015
© by SEMIKRON
SEMiX302KT16s
Fig. 4L: Power dissipation of three modules vs. direct
current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 3.0 – 13.08.2015
3
SEMiX302KT16s
Fig. 9: Gate trigger characteristics
spring configuration
SEMiX 2s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
4
Rev. 3.0 – 13.08.2015
© by SEMIKRON