SEMiX302KH16s Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) sinus 180° Tc = 85 °C 300 A Tc = 100 °C 230 A Tj = 25 °C 9300 A A ITRMS ITSM SEMiX® 2s Rectifier Thyr./Diode Module SEMiX302KH16s i2t 10 ms 10 ms Tj = 130 °C 8000 A Tj = 25 °C 432000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V VDRM 1600 V (di/dt)cr Tj = 130 °C 130 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs -40 ... 130 °C -40 ... 125 °C 1 min 4000 V 1s 4800 V Tj Module Features Tstg • Terminal height 17 mm • Chips soldered directly to insulated substrate Visol Typical Applications* Characteristics • Input Bridge Rectifier for AC/DC motor control • Power supply Symbol AC sinus 50Hz Conditions min. typ. max. Unit Chip VT Tj = 25 °C, IT = 900 A 1.7 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 1.1 mΩ 75 mA IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 130 °C 150 µs IH Tj = 25 °C 150 500 mA IL Tj = 25 °C, RG = 33 Ω 300 1000 mA VGT Tj = 25 °C, d.c. 3 V IGT Tj = 25 °C, d.c. 200 mA VGD Tj = 130 °C, d.c. 0.25 V IGD Tj = 130 °C, d.c. 10 mA Rth(j-c) Rth(j-c) Rth(j-c) continuous DC sin. 180° rec. 120° per thyristor K/W per diode K/W per thyristor 0.091 K/W per diode 0.091 K/W per thyristor K/W per diode K/W Module Rth(c-s) per chip K/W per module 0.045 K/W Ms to heat sink (M5) 3 5 Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s² a w 250 Nm g KH © by SEMIKRON Rev. 3.0 – 13.08.2015 1 SEMiX302KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 3.0 – 13.08.2015 © by SEMIKRON SEMiX302KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 3.0 – 13.08.2015 3 SEMiX302KH16s Fig. 9: Gate trigger characteristics spring configuration SEMiX 2s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 4 Rev. 3.0 – 13.08.2015 © by SEMIKRON