SKM 300GB063D
7 3' 8&! "
Absolute Maximum Ratings
Symbol Conditions
IGBT
%&$4
9 7 3' 8&
&
9 7 1'( 8&
;((
%
<((
.
7 =( 8&
*((
.
;((
.
A 3(
%
1(
E
7 3' 8&
3'(
.
7 F( 8&
1=(
.
;((
.
9 7 1'( 8&
1;((
.
7 3' 8&
<((
.
7 F( 8&
3=(
.
F((
.
3F((
.
'((
.
-9
<( ### G 1'(
8&
<( ### G 13'
8&
3'((
%
&>?73@&
%$4
Superfast IGBT Modules
%&& 7 *(( %B %$ C 3( %B
%&$4 D ;(( %
+
9 7 1'( 8&
+>?
+>?73@+
+4?
7 1( B #
SKM 300GAR063D
Freewheeling Diode
SKM 300GAL063D
+
9 7 1'( 8&
+>?
+>?73@+
+4?
7 1( B #
! "
" # $
# #""# " %&$
'( ) "" *( ) % &! &! &
"
+ , " - &. /& / & 01* 2 03( 2
Typical Applications*
4
0
" 2
4 .& - - -
54 6
-
0>?42
%
.&! 1 #
%$02
%$ 7 %&$! & 7 ; .
&$4
%$ 7 ( %! %&$ 7 %&$4
%&$(
&$
%&$02
&
&
%$ 7 1' %
min.
typ.
max.
Units
<!'
'!'
;!'
%
9 7 3' 8&
(!3
(!;
.
9 7 3' 8&
1!('
9 7 13' 8&
1
%
9 7 3'8&
*!3
H
9 7 13'8&
<!=
H
&
7 *(( .! %$ 7 1' % 9 7 3'8&-#
%&$ 7 3'! %$ 7 ( %
J
%$ 7 (%###G1'%
>
9 7 8&
>
7 ; H
>"" 7 ; H
%
3!1
3!'
9 7 13'8&-#
3!<
3!F
" 7 1 ?I
1=
3
+
+
1!3
+
=3(
&
(
K
1;(
F(
1<
''(
'(
L
1*
L
&
>092
1
7 3' 8&! "
Characteristics
Symbol Conditions
IGBT
$""
GAL
9 7 1'( 8&
Module
0
2
$
0""2
"
GB
9 7 13' 8&
Inverse Diode
SKM 300GB063D
Features
Units
7 3' 8&
&>?
SEMITRANS® 3
Values
%&& 7 *((%
&7 *((.
9 7 13' 8&
%$ 7 A 1'%
(!(M
%
%
NO6
GAR
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Characteristics
Symbol Conditions
Inverse Diode
%+ 7 %$&
SEMITRANS® 3
Superfast IGBT Modules
+
7 *(( .B %$ 7 ( %
min.
typ.
max.
Units
9 7 3' 8&-#
1!;'
3
%
9 7 13' 8&-#
1!;'
%+(
9 7 13' 8&
+
9 7 13' 8&
*
9 7 13' 8&
13(
1F
>>?
J
+ 7 *(( .
$
%$ 7 1' %B %&& 7 *(( %
>092/
3
%
(!M
%
*!=
H
.
E&
L
(!3'
NO6
Freewheeling Diode
%+ 7 %$&
+
7 <(( .B %$ 7 ( %
9 7 3' 8&-#
1!;'
3
%
9 7 13' 8&-#
1!;'
3
%
SKM 300GB063D
%+(
9 7 13' 8&
(!M
%
SKM 300GAR063D
+
9 7 13' 8&
*
%
SKM 300GAL063D
>>?
J
+ 7 *(( .
$
%$ 7 1' %B %&& 7 *(( %
>092+/
Features
Module
>02
?
Q ?;
?
?;
! "
" # $
# #""# " %&$
'( ) "" *( ) % &! &! &
"
+ , " - &. /& / & 01* 2 03( 2
Typical Applications*
4
0
" 2
4 .& - - -
54 1*(
3*
L
(!1'
&$
>&&PG$$P
1'
#! .
E&
3(
NO6
7 3' 8&
(!*'
H
7 13' 8&
(!'
H
(!(*F
NO6
*
'
3!'
'
*3'
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
6
-
GB
2
9 7 13' 8&
GAL
GAR
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
>
>
>
>
71
73
7*
7<
71
73
7*
;'
1M
<!=
1!*
(!('1F
(!(3<1
(!((31
QO6
QO6
QO6
QO6
7<
(!(((1
SKM 300GAR063D
>
>
>
>
71
73
7*
7<
71
73
7*
1<(
F'
3(!''
<!<'
(!(;1*
(!((<1
(!((<'
QO6
QO6
QO6
QO6
SKM 300GAL063D
7<
(!(((*
SEMITRANS® 3
Zth(j-c)D
Superfast IGBT Modules
SKM 300GB063D
Features
! "
" # $
# #""# " %&$
'( ) "" *( ) % &! &! &
"
+ , " - &. /& / & 01* 2 03( 2
Typical Applications*
4
0
" 2
4 .& - - -
54 6
-
GB
3
GAL
GAR
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
UL Recognized
File no. E 63 532
& / ';
6
& / ';
.
& / '= 0R / ';2
03-12-2008 NOS
.>
& / 'F 0R / ';2
© by SEMIKRON