SKM 400GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
1 /( 0
%
1 3(+ 0
/(0" '
3)++
45+
&
6+ 0
53+
&
#++
&
: /+
3+
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/( 0
44+
&
6+ 0
5++
&
#++
&
1 3(+ 0
//++
&
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44+
&
6+ 0
5++
&
#++
&
//++
&
(++
&
1
* 4+ --- @ 3(+
0
* 4+ --- @ 3/(
0
4+++
%78/$%
9
Trench IGBT Modules
3/++ ; 9 < /+ ; 1 3/( 0
= 3)++ Inverse Diode
%?
1 3(+ 0
%?78
%?78/$%?
SKM 400GB176D
%?8
3+ ; -
SKM 400GAL176D
Freewheeling Diode
SKM 400GAR176D
%?
1 3(+ 0
%?78
%?78/$%?
%?8
3+ ; -
Features
!" # $ %
Typical Applications*
& '
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,! $ -
.
' 1 3(+ 0
Module
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&" 3 -
Characteristics
Symbol Conditions
IGBT
9
9 " % 3/ &
%
9 + " +
9 3( /(0" '
'
' 79 4 B
71*
1
GAL
%9F
Units
("/
("6
#"4
4
&
3
3"/
+"A
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1 /(0
5"5
4"/
B
1 3/(0
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#
B
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3 8C
9 *6---@3(
79
4 B
max.
1 3/( 0
D9
typ.
1 /( 0
%
5++ &" 9 3( 1 /(0-
/(" 9 + min.
1 /( 0
1 3/(0-
GB
Units
/( 0
%78
SEMITRANS® 3
Values
3/++
% 5++&
1 3/( 0
9 : 3(
3A"6
3"3
?
?
+"66
?
/(++
55+
((
3)+
66+
34(
E
336
E
+"+)(
GH.
GAR
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Characteristics
Symbol Conditions
Inverse Diode
? %?
5++ &; 9 + ?+
?
®
SEMITRANS 3
Trench IGBT Modules
%778
D
%? 5++ &
'H' (6++ &H>
9 *3( ; 3/++ 71*I
''
min.
typ.
max.
Units
1 /( 0-
3")
3"A
1 3/( 0-
3"6
/
1 /( 0
3"/
3"4
1 3/( 0
+"A
3"3
1 /( 0
3")
3")
B
1 3/( 0
5
5
B
1 3/( 0
436
33)
&
>
)6
E
+"3/(
GH.
FWD
? SKM 400GB176D
?+
SKM 400GAL176D
SKM 400GAR176D
?
Features
%?
5++ &; 9 + !" # $ %
Typical Applications*
& '
()( * )(+ &
,! $ -
.
' %778
D
%? 5++ &
'H' (6++ &H>
9 *3( ; 3/++ 71*?I
''
1 /( 0-
3")
3"A
1 3/( 0-
3"6
/
1 /( 0
3"/
3"4
1 3/( 0
+"A
3"3
1 /( 0
3")
3")
1 3/( 0
5
5
1 3/( 0
436
33)
&
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GH.
Module
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7*
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8
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8
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3/( 0
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5
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M
/"(
(
M
5/(
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
GAL
GAR
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
7
7
7
7
3
/
5
4
3
/
5
(/
36
4"#
+"4
+"+(#A
+"+3//
+"++/
LH.
LH.
LH.
LH.
4
+"+/
SKM 400GAL176D
7
7
7
7
3
/
5
4
3
/
5
6(
/6
3+"(
3"(
+"+(4
+"++)(
+"++36
LH.
LH.
LH.
LH.
SKM 400GAR176D
4
+"+++/
SEMITRANS® 3
Zth(j-c)D
Trench IGBT Modules
SKM 400GB176D
Features
!" # $ %
Typical Applications*
& '
()( * )(+ &
,! $ -
.
' GB
3
GAL
GAR
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
UL Recognized
File no. 63 532
I (#
9F
6
I(#
9&J
I()
14-04-2011 STM
9&7
I(6
© by SEMIKRON