SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 .59<+.& @ . + + 8* A222 Inverse diode SEMITRANSTM 3 IGBT Modules &( &(< . 7 13 ;2 8* 7 / &( 7 /2 C 6C .? 7 /32 8* /32 /22 022 + + /A32 + 102 /32 A22 + + 1122 + Freewheeling diode SKM 200GB173D &( &(< . 7 13 ;2 8* 7 / &( 7 /2 C C .? 7 /32 8* SKM 200GB173D1 . 7 13 8* # Characteristics Symbol Conditions IGBT SKM 200GAL173D SKM 200GAR173D =9 min. 7 *9 &* 7 /2 + =9 7 2 *9 7 *9 .? 7 13 /13 8* .? 7 13 /13 8* =9 7 /3 .? 7 13 /13 8* =9 &*9 *9. Features ! *9 * * * *9 # =9 7 2 *9 7 13 # 7 / F <**GB99G 6 ' .7 13 /13 8* ## # ** 7 /122 &* 7 /32 + <= 7 <=## 7 A E .? 7 /13 8* =9 7 > /3 "! # $ % & ' # ( ) # *+ & " ,*- , * - .! /0 12 Typical Applications +* 343 ' Units /422 112 /32 022 > 12 ' A2 666 B /32 /13 +* / 6 Values . 7 13 ;2 8* 7 / .? . . 7 13 8* # 432 +* ,* " 432 ' /122 ,* 5" %! !6 # *9 &* 7 /32 + A; =9 7 /3 typ. max. 33 2/ /$3 /D //4 /40 $1 20 /D 1/3 /00 /D 0A A3 0D 3 12 1 233 12 9 9## Units + E ( ( ( 203 23 E 3;2 /22 432 A2 D3 A3 H Inverse diode ( 7 9* . . &<< I 9 &( 7 /32 +C =9 7 2 C .? 7 13 /13 8* .? 7 /13 8* .? 7 /13 8* &( 7 /32 +C .? 7 13 /13 8* J 7 /222 +JK =9 11 /D 14 /0 A3 $2 ;3 /3 0; /3 $1 72 E + K* H FWD ( 7 9* . . &<< I 9 &( 7 /32 +C =9 7 2 .? 7 13 /13 8* .? 7 /13 8* .? 7 /13 8* &( 7 /32 +C .? 7 13 /13 8* J 7 +JK =9 1 /; /0 03 43 //2 12 32 1A /3 A3 7 E + K* H Thermal characteristics <?' <?', <?'(, &=-. & , (M, 2/ 201 21/ LJM LJM LJM <' 220; LJM 3 013 Mechanical data GB GAL GAR N $ $ 1 27-03-2006 RAA 0 © by SEMIKRON SKM 200GB173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 27-03-2006 RAA © by SEMIKRON SKM 200GB173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 27-03-2006 RAA © by SEMIKRON SKM 200GB173D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm =- * , 3$ =+ * , 34 O , 3$ =+< * , 3; O , 3$ * , 3$ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 27-03-2006 RAA © by SEMIKRON