SKM 300GB125D
5 .6 7'" #
Absolute Maximum Ratings
Symbol Conditions
IGBT
8'4
9 5 .6 7'
'
9 5 +6, 7'
'2=
+.,,
8
;,,
(
5 <, 7'
.+,
(
?,,
(
@ .,
8
+,
E
5 .6 7'
.A,
(
5 <, 7'
+<,
(
?,,
(
+<,,
(
6,,
(
?,FFFG +6,
7'
?,FFFG +.6
7'
?,,,
8
'2=5.>'
Ultra Fast IGBT Module
SKM 300GB125D
8'' 5 A,, 8B 84 C ., 8B
8'4 D +.,, 8
Units
5 .6 7'
84
SEMITRANS® 3
Values
9 5 +.6 7'
Inverse Diode
$
9 5 +6, 7'
$2=
$2=5.>$
$=
5 +, B F
9 5 +6, 7'
Module
*2=&9
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
Typical Applications*
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
8
('" + F
5 .6 7'" #
Characteristics
Symbol Conditions
IGBT
84*-
84 5 8'4" ' 5 < (
'4
84 5 , 8" 8'4 5 8'4
8'4,
'4
8'4*'
'
84 5 +6 8
typ.
max.
Units
?"6
6"6
A"6
8
9 5 .6 7'
,"+
,";
(
9 5 .6 7'
+"6
+"H6
8
9 5 +.6 7'
+"H
9 5 .67'
I
9 5 +.67'
++"6
8
+,"6
J
;";
;"<6
8
8'4 5 .6" 84 5 , 8
+<
."6
.?
;".
$
$
+
+";
$
K
84 5 ,8 G.,8
2
9 5 7'
# 5 + =1
2
5 ; J
2## 5 ; J
.,,,
8'' 5 A,,8
'5 .,,(
9 5 +.6 7'
84 5 @ +68
'
."6
L
+;,
?,
+A
?A,
;,
M
4##
2*9-
J
'
5 .,, (" 84 5 +6 8 9 5 7'&F
'
*
4
*###
min.
M
,",H6
NOP
GB
1
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Characteristics
Symbol Conditions
Inverse Diode
8$ 5 84'
$
5 .,, (B 84 5 , 8
8$,
min.
typ.
max.
Units
9 5 .6 7'&F
.
."6
8
9 5 +.6 7'&F
+"<
9 5 .6 7'
+"+
8
+".
9 5 +.6 7'
$
®
SEMITRANS 3
Ultra Fast IGBT Module
8
9 5 .6 7'
?"6
A"6
9 5 +.6 7'
22=
K
$ 5 .,, (
O 5 <,,, (OE
4
84 5 , 8B 8'' 5 A,, 8
2*9-)
8
J
J
9 5 +.6 7'
;?,
?A
(
E'
M
,"+<
NOP
.,
Module
SKM 300GB125D
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
'4
2''QG44Q
+6
F" 5 .6 7'
,";6
J
5 +.6 7'
,"6
J
2*-
=
0 =A
;
=
=A
."6
,",;<
NOP
6
6
;.6
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
GB
2
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
5+
5.
5;
5?
5+
5.
5;
6;
+<"6
;"+
?
,",?
,",+<I
,",,+H
0OP
0OP
0OP
0OP
5?
,",,;
2
2
2
2
5+
5.
5;
5?
5+
5.
5;
++6
6.
++
.
,",;AA
,",++;
,",,;
0OP
0OP
0OP
0OP
5?
,",,,.
Zth(j-c)D
Ultra Fast IGBT Module
SKM 300GB125D
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
Typical Applications*
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
GB
3
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 1 Typ. output characteristic, tp = 80 µs; 125 °C
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
Fig. 6 Typ. gate charge characteristic
4
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
UL Recognized
File 63 532
' ) 6A
6
' ) 6A
03-06-2009 NOS
© by SEMIKRON