SKiiP 24NAB12T4V1 CONVERTER, INVERTER, BRAKE
Absolute Maximum Ratings
Symbol Conditions
IGBT - Inverter, Chopper
,%6
A
,%6
2 )( 30 "
2 )( 5>:7 3
8
Values
Units
.)::
? 5'@7
.:(
B ):
,
,
; : $$$ < .>(
3
5'(7
.:(
; : $$$ < .>(
3
.&::
&
'>:
&?:
,
C
; : $$$ < .(:
3
:
; : $$$ < .)(
3
)(::
,
Diode - Inverter, Chopper
®
MiniSKiiP 2
1
1A
2 )( 5>:7 3
8
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB12T4V1
Diode - Rectifier
,A
1
16A
C
2 >: 3
" 2 .: -0 .?: 30 8 2 )( 3
" 2 .: -0 .?: 30 8 2 )( 3
8
Module
Features
!
" # $ %&'(')
Typical Applications*
* " )) +,
" - " .. +/
Remarks
,% 0 ,12 " * *
-"$ - 2 .)(3
-4$ 5 " -
2 67
" $ * 89.(: 5--$ " 2 ;: $$$
<.(:37
A6
" " - 5): D "7
,
0 . -$
Characteristics
Symbol Conditions
IGBT - Inverter, Chopper
,%
,%5
7
,%5E7
- 2 '( 0 8 2 )( 5.(:7 3
,% 2 ,%0 2 . -
8 2 )( 5.(:7 3
8 2 )( 5.(:7 3
,% 2 )( ,0 ,% 2 : ,0 2 . A!G
,% 2 )( ,0 ,% 2 : ,0 2 . A!G
,% 2 )( ,0 ,% 2 : ,0 2 . A!G
58;7
" 57
57
%
, 2 &:: ,0 ,% 2 B .( ,
- 2 '( 0 8 2 .(:3
2 2 .? F
* 2 )( 30 "
min.
(
%
typ.
max.
.0?( 5)0)(7 )0:( 5)0(7
(0?
&0(
:0? 5:0>7
:0@ 5:0?7
': 57
'' 5>7
.0@(
:0.((
:0..(
Units
,
,
,
-F
1
1
1
.
HD/
':
'(
'::
((
0'
-I
'0)(
-I
Diode - Inverter, Chopper
,1 2 ,%
,5E7
1- 2 '( 0 8 2 )( 5.(:7 3
8 2 )( 5.(:7 3
8 2 )( 5.(:7 3
)0' 5)0'7
.0' 5:0@7
)@ 5:7
)0& 5)0&7
.0( 5.0.7
'. 5'7
,
,
-F
58;7
" .0)
HD/
A
J
%
1- 2 '( 0 , 2 &:: ,
,% 2 : ,0 8 2 .(: 3
'
(0&
)0
K
-I
1D 2 .)(: DK
Diode -Rectifier
,1
,5E7
1- 2 )( 0 8 2 )( 3
8 2 .(: 3
8 2 .(: 3
.0.
:0?
.'
,
,
-F
58;7
" .0)(
HD/
.:::5.&>:7
F
Temperature Sensor
' L0 2 )( 5.::7 3
Mechanical Data
NAB
A
1
&(
A M
22-12-2009 LAN
)
)0(
N-
© by SEMIKRON
SKiiP 24NAB12T4V1 CONVERTER, INVERTER, BRAKE
Fig. 1 Typ. output characteristic
Fig. 2 Typ. rated current vs. temperature IC = f (TS)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
22-12-2009 LAN
© by SEMIKRON
SKiiP 24NAB12T4V1 CONVERTER, INVERTER, BRAKE
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. input bridge forward characteristic
3
22-12-2009 LAN
© by SEMIKRON
SKiiP 24NAB12T4V1 CONVERTER, INVERTER, BRAKE
"0 -
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our staff.
4
22-12-2009 LAN
© by SEMIKRON