SKM 111AR MOSFET,TRANSISTOR

SKM 111AR MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
1 2 %, 3 -
Values
Units
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9 %#
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4
4
3
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4
= 2 %##
=7 2 7
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48
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Inverse diode
SEMITRANSTM M1
Power MOSFET Modules
SKM 111AR
Features
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Typical Applications*
-
-
. . &/ 0
Characteristics
Symbol Conditions
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48!$
.
1 2 %, 3 -
min.
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48 2 %# 4 4. 2 # 4
48 2 "# 4 . 2 "+# 4. 2 %, 4 . 2 "+# *#
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48 2 # 4. 2 %, 4 2 " 7C'
typ.
max.
Units
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4
4
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A
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B
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Inverse diode
4.
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= 2 ;## D 48 2 # 4
1: 2 %, !",#$ 3
1: 2 %, 3
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Thermal characteristics
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Mechanical data
7
7
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-
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MA
1
03-12-2008 NOS
© by SEMIKRON
SKM 111AR MOSFET,TRANSISTOR
Fig. 1 Rated power dissipation vs. temperature
Fig. 2 Maximum safe operating area
Fig. 3 Output characteristic
Fig. 4 Transfer characteristic
Fig. 5 On-resistance vs. temperature
Fig. 6 Rated current vs. temperature
2
03-12-2008 NOS
© by SEMIKRON
SKM 111AR MOSFET,TRANSISTOR
Fig. 7 Brakdown voltage vs. temperature
Fig. 8 Drain-source voltage derating
Fig. 9 Capacitances vs. drain-source voltage
Fig. 10 Gate charge characteristic
Fig. 11 Diode forward characteristic
Fig. 14 Gate-source threshold voltage
3
03-12-2008 NOS
© by SEMIKRON
SKM 111AR MOSFET,TRANSISTOR
UL Recognized
File no. E 63 532
Dimensions in mm
. ",
.",
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our staff.
4
03-12-2008 NOS
© by SEMIKRON