RB160A30 Diodes Schottky barrier diode RB160A30 zApplications General rectification z Dimensions (Unit : mm) CATHODE BAND φ0.6±0.1 ① ② 1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR ① zConstruction Silicon epitaxial planar ② Manufacture Date z Taping specifications (Unit : mm) BROWN H2 A Symbol BLUE E B C L2 L1 F H1 D Standard dimension value(mm) T-31 52.4±1.5 Ａ +0.4 T-32 26.0 0 T-31 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=100µs） Junction temperature Storage temperature Limits 30 30 1 70 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave zElectrical characteristics (Ta=25°C) Parameter Forward voltagae Reverse current ESD break down voltage Symbol VF IR ESD Conditions Min. 0.33 Typ. 0.43 Max. 0.48 Unit V 20 9.00 - 50 - µA IF=1.0A VR=30V kV C=100pF,R=1.5kΩ, forward and reverse : 1 time Rev.B 1/3 RB160A30 Diodes zElectrical characteristic curves (Ta=25°C) 10000 Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 600 5 10 15 20 25 30 0 AVE:424.2mV 410 400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 80 70 60 50 40 AVE:8.172uA 30 20 380 370 360 350 AVE:324.4pF 340 330 320 10 310 0 300 VF DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 390 Ta=25℃ VR=30V n=30pcs 90 REVERSE CURRENT:IR(uA) 430 IR DISPERSION MAP 20 1cyc RESERVE RECOVERY TIME:trr(ns) Ifsm 8.3ms 100 50 AVE:98.0A Ct DISPERSION MAP 0 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 AVE:11.7ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 30 400 100 Ta=25℃ IF=1A n=30pcs 440 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 FORWARD VOLTAGE:VF(mV) f=1MHz 1000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 50 Ifsm 8.3ms 8.3ms 1cyc 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 100 Mounted on epoxy board 1000 Ifsm t 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IF=0.5A 1 Rth(j-a) Rth(j-l) IM=1mA 100 D=1/2 0.8 time(s) td=300us Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 DC 0.6 Sin(θ＝180) 0.4 0.2 1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RB160A30 Diodes 0.06 Sin(θ＝180) 0.04 D=1/2 DC 0.02 0 Io 0A 0V 2.5 t 2 DC T VR D=t/T VR=15V Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 REVERSE POWER DISSIPATION:PR (W) 3 3 0.1 0A 0V 2.5 2 DC Io t T VR D=t/T VR=15V Tj=125℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 AVE:6.90kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1