SMADB3

SMADB3
BIDIRECTIONAL TRIGGER DIODE
Reverse Voltage - 32 Volts
Power: 150mW
DO-214AC/SMA
FEATURES
0.110(2.80)
0.100(2.54)
0.067 (1.70)
0.051 (1.30)
Small glass structure ensures high reliability
VBO:28-36V version
Low breakover current
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.096(2.42)
0.078(1.98)
0.060(1.52)
0.030(0.76)
Case: JEDEC DO-214AC molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Weight:0.002 ounce, 0.07 grams
Marking :DB3
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Breakover voltage *
Breakover voltage symmetry
Dynamic breakover voltage *
Output voltage *
Breakover current *
Rise time *
Leakage current *
Power dissipation on printed circuit
Repetitive peak on-state current
Thermal Resistances from Junction to ambient
Thermal Resistances from Junction to lead
Operating junction and storage temperature range
VALUE
TEST
CONDITION
SYMBOLS
C=22nF **
C=22nF **
(NOTE 1)
DIAGRAM2
C=22nF **
DIAGRAM3
VR=0.5VBO
TA=65 C
tp=20µs
f=100Hz
VBO
I+VBOI-I-VBO I
I∆V+I
VO
IBO
tr
IB
Pd
Min.
28
-3
5
5
Typ.
32
Max.
36
3
UNITS
10
150
VOLTS
VOLTS
VOLTS
VOLTS
µA
µS
µA
mW
ITRM
2
A
RΘJA
RΘJL
TJ,TSTG
400
150
125
* :Electrical characteristic appoicaboe in forward and reverse directions.
** :Connected in parallel with the devices.
Note 1:IBO from IBO to 10mA
MDD ELECTRONIC
100
1.5
-40
C/W
C
RATINGS AND CHARACTERISTIC CURVES SMADB3
FIG. 1-POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE(MAXIMUM VALUES)
DIAGRAM 1:CURRENT-VOLTAGE CHARACTERISTICS
160
+ IF
140
IBO
IB
-V
120
P,POWER DISSIPATION,mW
10mA
+V
0.5VBO
∆V
100
80
60
40
20
0
VBO
0
10
20
30
40
50
60
70
80
90
100
110
120
130
AMBIENT TEMPERATURE, C
FIG. 2-PEAK PULSE CURRENT VERSUS PULSE
DURATION (MAXIMUM VALUES)
- IF
ITRM,PEAK PULSE CURRENT,A
2
DIAGRAM 2:TEST CIRCUIT OUTPUT VOLTAGE
10 KΩ
220 V
50 Hz
500 KΩ
D.U.T
Vo
0.1µF
R=20Ω
1
0.1
0.01
10
100
1000
10000
tp,PULSE DURATION,µs
FIG. 3-RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
10%
tr
VBO[Tj]
90%
RELATIVE VARIATION OF VBO
IP
VBO[Tj=25 C]
DIAGRAM 3:TEST CIRCUIT SEE DIAGRAM 2.ADJUST R FOR IP=0.5A
1.08
1.06
1.04
1.02
1.00
25
50
75
Tj,JUNCTION TEMPERATURE, C
MDD ELECTRONIC
100
125
Tj( C)