US2ABF THRU US2MBF SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Forward Current - 2.0 Amperes For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) MECHANICAL DATA 0.051(1.30) 0.039(1.0) Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS US2ABF US2BBF US2DBF US2GBF US2JBF US2KBF US2MBF U2AB Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=65 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) VRRM VRMS VDC 50 35 50 U2BB U2DB U2GB U2JB U2KB U2MB 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 2.0 Amps IFSM 50 Amps VF 1.3 1.0 IR trr 50 CJ 60 60 20 -55 to +150 Volts µA 75 RθJA RθJL Operating junction and storage temperature range TJ,TSTG 1.6 5.0 100.0 ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES US2ABF THRU US2MBF Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 2.5 100LFM I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.0 Lead 1.5 Ambient 1.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.5 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 75 50 100 125 150 175 0 Ambient /Lead Temperature (°C) 1.0 0.1 US2ABF~US2DBF US2GBF US2JBF~US2MBF 1.0 1.5 2.0 Instaneous Forward Voltage (V) ２０１４－０３ ０１版 2.5 Peak Forward Surage Current (A) Instaneous Forward Current (A) T J =25°C pulse with 300μs 1% duty cycle 0.5 60 80 100 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 20 0.01 0.0 40 % of PIV.VOLTS Fig.3 Typical Instaneous Forward Characteristics 10 20 60 US2ABF~US2GBF US2JBF~US2MBF 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 10 00 1 10 100 Number of Cycles ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ