Midium Power Transistors (-80V / -1.5A) 2SAR554P Structure PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) 2) High speed switching Applications Driver (2) (3) Abbreviated symbol : MH Packaging specifications Inner circuit (Unit : mm) Package Taping Type Code T100 Basic ordering unit (pieces) 1000 2SAR554P Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage DC Collector current Pulsed VEBO -6 V IC Parameter Power dissipation Junction temperature Range of storage temperature -1.5 A ICP *1 -3 A PD *2 0.5 W PD *3 Tj Tstg 2 W 150 -55 to 150 C C (1) Base (2) Collector (3) Emitter *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.12 - Rev.A 2SAR554P Data Sheet Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage Parameter BVCEO -80 - - V Collector-base breakdown voltage BVCBO -80 - - V IC= -100μA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100μA Collector cut-off current ICBO - - -1 A VCB= -80V Emitter cut-off current IEBO - - -1 A VEB= -4V VCE(sat) - -200 -400 hFE 120 - 390 - VCE= -3V, IC= -100mA fT - 340 - MHz VCE= -10V IE=200mA, f=100MHz Collector output capacitance Cob - 15 - pF Turn-on time ton *1 tstg *1 - 50 - ns - 300 - ns tf *1 - 50 - ns Collector-emitter staturation voltage DC current gain Transition frequency Storage time Fall time Conditions IC= -1mA mV IC= -500mA, IB= -25mA VCB= -10V, IE=0A f=1MHz IC= -0.7A,IB1= -70mA, IB2=70mA,VCC ~ _-10V *1 See switching time test circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.12 - Rev.A 2SAR554P Data Sheet Electrical characteristic curves -5.0mA -3.0mA 1000 1000 Ta=25°C -2.5mA VCE = -3V -0.45 -0.40 -0.35 -1.5mA -0.30 -0.25 -1.0mA -0.20 -0.15 -0.5mA -0.10 DC CURRENT GAIN : hFE -2.0mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] -0.50 VCE = -5V -3V 100 Ta=125°C 75°C 25°C -40°C 100 -0.05 10 0.00 -1.0 -1.5 10 -1 -2.0 COLECTOR TO EMITTER VOLTAGE : VCE[V] -0.1 IC/IB=50 20 10 -0.01 -1 -10 -100 -1000 -10000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] Ta=25°C -1 10 Cob 1 -0.1 -1 -10 -100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ TRANSITION FREQUENCY : fT[MHz] EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Cib 100 -10000 -1 -100 -1000 -10000 -10000 IC/IB=20 -0.01 -1 -10 COLLECTOR CURRENT : IC[mA] Fig3. DC Current Gain vs. Collector Current ( ΙΙ ) VCE = -3V Ta=125°C 75°C 25°C -40°C Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι ) Ta=25°C f=1MHz IE=0A IC=0A -1000 -0.1 COLLECTOR CURRENT : IC[mA] 1000 -100 COLLECTOR CURRENT : IC[mA] Fig.2 DC Current Gain vs. Collector Current ( Ι ) Fig.1 Typical Output Characteristics -1 -10 COLLECTOR CURRENT : IC [mA] -0.5 -1000 Ta=125°C 75°C 25°C -40°C -100 -10 -1 -10 -100 -1000 -10000 0 -0.5 -1 -1.5 COLLECTOR CURRENT : IC[mA] BASE TO EMITTER VOLTAGE : VBE[V] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ ) Fig.6 Ground Emitter Propagation Characteristics 1000 Ta=25°C VCE = -10V -10 Single pulse COLLECTOR CURRENT : IC [A] 0.0 100 10 10 100 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current 3/4 1000 1ms 10ms -1 100ms -0.1 -0.01 DC Ta=25°C (Mounted on a recommended land) DC Ta=25°C (Mounted on a ceramic board) -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.9 Safe Operating Area 2009.12 - Rev.A 2SAR554P Data Sheet Switching time test circuit RL=15Ω VIN IB1 IC Pw _ -10V VCC ~ IB2 Pw _ ~ 50μs DUTY CYCLE1% IB2 BASE CURENT WAVEFORM IB1 ton tstg tf 90% COLLECTOR CURRENT WAVEFORM IC 10% www.rohm.com c 2009 ROHM Co., Ltd. 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