MBR2H100SFT3G

MBR2H100SFT3G
100V 2.0A
SURFACE MOUNT SCHOTTKY BARRIER DIODE
FEATURES
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SOD-123FL
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C Human Body Model, 3B
This is a Pb−Free Device
MECHANICAL DATA
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Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2H
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 146°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
2.0
A
IFSM
50
A
Tstg, TJ
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
23
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
0.76
0.84
0.61
0.68
40
0.5
V
mA
mA
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
E-mail: [email protected]
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Web Site: www.taychipst.com
MBR2H100SFT3G
100V 2.0A
SURFACE MOUNT SCHOTTKY BARRIER DIODE
RATINGS AND CHARACTERISTIC CURVES
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
150°C 125°C 25°C
10
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
150°C 125°C 25°C
10
1
0.1
1.4
0.8
1.0
1.2
1.4
1.6
IR, REVERSE CURRENT (mA)
10
150°C
125°C
0.001
0.0001
10
20
30
40
50
60
0.1
125°C
0.01
25°C
0.001
0.0001
25°C
0
150°C
1
70
80
90
0.00001
0
100
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
4.0
RqJL = 23°C/W
dc
3.0
Square Wave
2.0
1.5
1.0
0.5
0
120 125 130 135 140 145 150 155 160 165 170 175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
0.6
Figure 2. Maximum Forward Voltage
0.01
2.5
0.4
Figure 1. Typical Forward Voltage
0.1
3.5
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1
0.00001
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
IF(AV), AVERAGE FORWARD CURRENT (A)
MBR2H100SFT3G
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
TJ = 175°C
Square Wave
dc
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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Web Site: www.taychipst.com