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BYG10D THRU BYG10M
200V-1000V
Silicon Mesa SMD Rectifier
D
D
D
D
D
1.5A
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
tp=10ms,
half sinewave
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
200
400
600
800
1000
30
Unit
V
V
V
V
V
A
IFAV
Tj=Tstg
1.5
–55...+150
A
°C
ER
20
mJ
I(BR)R=1A, Tj=25°C
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
TL=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
IF=1A
IF=1.5A
VR=VRRM
VR=VRRM, Tj=100°C
IF=0.5A, IR=1A, iR=0.25A
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Type
Symbol
VF
VF
IR
IR
trr
Min
Typ
Max
1.1
1.15
1
10
4
Unit
V
V
mA
mA
ms
BYG10D THRU BYG10M
200V-1000V
Silicon Mesa SMD Rectifier
RATINGS AND CHARACTERISTIC CURVES
BYG10D THRU BYG10M
100
IF – Forward Current ( A )
100
I R – Reverse Current ( mA )
1.5A
10
1
0.1
10
Tj = 125°C
1
Tj = 75°C
0.1
VR = VR RM
0.01
Tj = 25°C
0.01
0
40
80
120
200
160
0
Tj – Junction Temperature ( °C )
94 9180
0.6
1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
94 9284
Figure 3. Typ. Forward Current vs. Forward Voltage
Figure 1. Typ. Reverse Current vs. Junction Temperature
I FAV– Average Forward Current ( A )
5000
t rr – Reverse Recovery Time ( ns )
2.0
1.6
1.2
RthJA=25K/W
100K/W
125K/W
0.8
0.4
Tamb= 125°C
4000
3000
Tamb = 75°C
40
80
IR=0.5A, iR=0.125A
0
120
160
200
0
Tamb – Ambient Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
IF – Forward Current ( A )
94 9544
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Tamb = 25°C
1000
150K/W
0
Tamb= 50°C
2000
0
94 9179
Tamb= 100°C
Figure 4. Typ. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
Single Pulse
tp/T=0.01
1
10–5
10–4
94 9339
10–3
10–2
10–1
100
101
102
tp – Pulse Length ( s )
Figure 5. Thermal Response
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