BYG10D THRU BYG10M 200V-1000V Silicon Mesa SMD Rectifier D D D D D 1.5A Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable Absolute Maximum Ratings Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type BYG10D BYG10G BYG10J BYG10K BYG10M tp=10ms, half sinewave Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM Value 200 400 600 800 1000 30 Unit V V V V V A IFAV Tj=Tstg 1.5 –55...+150 A °C ER 20 mJ I(BR)R=1A, Tj=25°C Maximum Thermal Resistance Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Electrical Characteristics Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100°C IF=0.5A, IR=1A, iR=0.25A 1 of 2 Type Symbol VF VF IR IR trr Min Typ Max 1.1 1.15 1 10 4 Unit V V mA mA ms BYG10D THRU BYG10M 200V-1000V Silicon Mesa SMD Rectifier RATINGS AND CHARACTERISTIC CURVES BYG10D THRU BYG10M 100 IF – Forward Current ( A ) 100 I R – Reverse Current ( mA ) 1.5A 10 1 0.1 10 Tj = 125°C 1 Tj = 75°C 0.1 VR = VR RM 0.01 Tj = 25°C 0.01 0 40 80 120 200 160 0 Tj – Junction Temperature ( °C ) 94 9180 0.6 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) 94 9284 Figure 3. Typ. Forward Current vs. Forward Voltage Figure 1. Typ. Reverse Current vs. Junction Temperature I FAV– Average Forward Current ( A ) 5000 t rr – Reverse Recovery Time ( ns ) 2.0 1.6 1.2 RthJA=25K/W 100K/W 125K/W 0.8 0.4 Tamb= 125°C 4000 3000 Tamb = 75°C 40 80 IR=0.5A, iR=0.125A 0 120 160 200 0 Tamb – Ambient Temperature ( °C ) 0.2 0.4 0.6 0.8 1.0 IF – Forward Current ( A ) 94 9544 Figure 2. Max. Average Forward Current vs. Ambient Temperature Z thp – Thermal Resistance for Pulse Cond. (K/W) Tamb = 25°C 1000 150K/W 0 Tamb= 50°C 2000 0 94 9179 Tamb= 100°C Figure 4. Typ. Reverse Recovery Time vs. Forward Current 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10–5 10–4 94 9339 10–3 10–2 10–1 100 101 102 tp – Pulse Length ( s ) Figure 5. Thermal Response E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com