F112R6A015SC target datasheet flowPACK 1 1200V/15A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A015SC-M438E08 ● 10-F112R6A015SC01-M438E18 Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 36 A 370 A 360 A2s 42 W Tjmax 150 °C VCE 1200 V 20 A tp limited by Tjmax 45 A VCE ≤ 1200V, Tj ≤ Top max 30 A 57 W ±20 V 10 800 μs V 175 °C Blocking Diode Repetitive peak reverse voltage VRRM DC forward current IFAV Surge forward current IFSM I2t-value I2t Power dissipation per Diode Ptot Maximum Junction Temperature Tj=Tjmax Th=80°C tp=10ms Tj=25°C Tj=Tjmax Th=80°C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpulse Turn off safe operating area Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Copyright by Vincotech Tj=Tjmax Tj=Tjmax Tj≤150°C VGE=15V Tjmax 1 Th=80°C Th=80°C Revision: 3 F112R6A015SC target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 18 A 30 A 38 W Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12.7 mm Clearance min 12.7 mm Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Th=80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Thermal Properties Insulation Properties Insulation voltage Comparative tracking index Copyright by Vincotech Vis t=2s DC voltage CTI >200 2 Revision: 3 F112R6A015SC target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0.8 1.1 1.03 0.9 0.77 10 10 1.35 Blocking Diode Forward voltage VF 35 Threshold voltage (for power loss calc. only) Vto 35 Slope resistance (for power loss calc. only) rt 35 Reverse current Ir 1600 Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to heatsink per chip RthJC Thermal grease thickness≤50um λ = 1 W/mK VGE(th) VCE=VGE V V mΩ 0.1 mA 1.68 K/W tbd. Inverter Transistor Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode VCE(sat) Gate-emitter leakage current IGES Rgint Turn-on delay time Rise time Turn-off delay time Fall time 15 15 ICES Integrated Gate resistor 0.0005 0 1200 0 20 tr tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 5 5.8 6.5 1.6 1.84 2.25 2.25 0.005 200 Rgoff=8 Ω Rgon=8 Ω 600 ±15 15 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω none td(on) td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 85.2 84.8 17 21.8 201 264 82.1 123 0.82 1.26 0.88 1.36 ns mWs 900 f=1MHz 25 0 Tj=25°C 80 pF 55 ±15 Tj=25°C 120 Thermal grease thickness≤50um λ = 1 W/mK nC 1.67 K/W tbd. Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Rgon=8 Ω 600 ±15 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Copyright by Vincotech 15 Thermal grease thickness≤50um λ = 1 W/mK 15 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1.35 1.90 1.91 16.06 433.4 2.75 109 1.16 2.35 V A ns μC A/μs mWs 2.52 K/W tbd. 3 Revision: 3 F112R6A015SC target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation P R100=1486 Ω Tc=100°C -5 5 % 200 mW Tj=25°C 2 mW/K Tc=100°C Power dissipation constant Ω 22000 Tj=25°C B-value B(25/50) Tol. ±3% Tj=25°C 3950 K B-value B(25/100) Tol. ±3% Tj=25°C 3996 K Vincotech NTC Reference Tj=25°C B Module Properties Thermal resistance, case to heatsink Module stray inductance Chip module lead resistance, terminals -chip RthCH tbd. LsCE 5 nH Rcc'1+EE' tbd. mΩ Mounting torque M 3.8 Terminal connection torque M 6.7 Weight G Copyright by Vincotech K/W 4 4.2 Nm 7 7.4 Nm tbd. 4 g Revision: 3 F112R6A015SC target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version 12mm housing 12mm housing, without thermistor Ordering Code 10-F112R6A015SC-M438E08 10-F112R6A015SC01-M438E18 in DataMatrix as M438-E08 M438-E18 in packaging barcode as M438-E08 M438-E18 Outline Pinout Copyright by Vincotech 5 Revision: 3 F112R6A015SC target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 6 Revision: 3