70-W424NIA800SH-M800F target datasheet 2xflow NPC 4w 2400V/800A Features 2xflow SCREW 4w 12mm housing ● 2400V NPC-topology ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors ● assymetrical inductance technology Target Applications Schematic ● Solar inverter ● Wind Power ● Motor Drive Types ● 70-W424NIA800SH-M800F Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V Snubber Diode Repetitive peak reverse voltage VRRM Forward average current IFAV Surge forward current IFSM Th=80°C Tc=80°C tp=10ms Tj=25°C 151 197 A 1340 A 8978 A 2s 323 490 W Tjmax 175 °C VCE 1200 V 670 863 A 1600 A 1583 2399 W ±20 V 10 800 µs V 175 °C I2t-value I2t Power dissipation per Thyristor Ptot Maximum Junction Temperature sine,d=0.5 Tj=Tjmax Tj=Tjmax Th=80°C Tc=80°C Buck IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature copyright by Vincotech Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Tj≤150°C VGE=15V Tjmax 1 Th=80°C Tc=80°C Revision: 4 70-W424NIA800SH-M800F target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 475 641 A 5720 A 957 1450 W Tjmax 175 °C VCE 1200 V 600 786 A 1600 A Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Tj=Tjmax Surge Forward Current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Boost IGBT Collector-emitter break down voltage DC collector current IC Tj=Tjmax Repetitive peak collector current ICpuls tp limited by Tjmax Power dissipation per IGBT Ptot Tj=Tjmax Gate-emitter peak voltage VGE Short circuit ratings Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C 1062 Tc=80°C 1609 W ±20 V tSC Tj≤150°C 10 VCC VGE=15V 800 µs V 175 °C 1200 V 367 495 A 1200 A 572 867 W 175 °C 1200 V 367 495 A 1200 A 572 867 W 175 °C 1000 798 V Tjmax Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tc=25°C IF Tj=Tjmax Surge Forward Current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Tjmax Boost Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Tjmax DC link Capacitor Max.DC voltage copyright by Vincotech TC=25°C TC=100°C VMAX 2 Revision: 4 70-W424NIA800SH-M800F target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit -40…+125 °C -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Thermal Properties Storage temperature Tstg Operation temperature under switching condition Top for power part Insulation Properties Insulation voltage Stage copyright by Vincotech Vis t=2s DC voltage CTI >200 3 Revision: 4 70-W424NIA800SH-M800F target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Value Tj Min Unit Typ Max 1,91 1,85 2,54 Snubber Diode Forward voltage VF Reverse current Ir 100 1200 Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Thermal grease thickness≤50um λ = 1 W/mK VGE(th) VCE=VGE Tj=25°C Tj=150°C Tj=25°C Tj=150°C 0,24 V mA 0,29 K/W 0,19 Buck IGBT Gate emitter threshold voltage 0,0272 Tj=25°C Tj=150°C Tj=25°C Tj=175°C Tj=25°C Tj=175°C Tj=25°C Tj=150°C 5,2 5,8 6,4 1,7 1,86 2,30 2,4 VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint 0,25 Input capacitance Cies 44320 Output capacitance Coss Reverse transfer capacitance Crss Collector-emitter saturation voltage Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 0 f=1MHz 800 25 0,096 1920 Tj=25°C V V mA nA Ω pF 2600 2560 ±15 960 800 Tj=25°C 4060 Thermal grease thickness≤50um λ = 1 W/mK nC 0,06 K/W 0,04 Buck Diode Diode forward voltage VF Reverse leakage current IR 800 Rgon=8 Ω 1200 Tj=25°C Tj=125°C Tj=25°C Tj=125°C 2,34 2,38 2,52 960 Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Thermal grease thickness≤50um λ = 1 W/mK Gate emitter threshold voltage VGE(th) VCE=VGE Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint 0,94 Input capacitance Cies 49200 Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC V µA 0,10 K/W 0,07 Boost IGBT 0,0304 0 f=1MHz 800 25 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 5 5,80 6,5 1,55 1,91 2,14 2,05 0,104 4800 V mA nA Ω 3240 Tj=25°C V pF 2760 15 960 800 Tj=25°C 3840 Thermal grease thickness≤50um λ = 1 W/mK nC 0,09 K/W 0,06 Boost Inverse Diode Diode forward voltage VF Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 600 Tj=25°C Tj=125°C 1,35 Thermal grease thickness≤50um λ = 1 W/mK 1,90 1,84 2,05 V 0,17 K/W 0,11 Boost Diode Diode forward voltage VF Reverse leakage current Ir Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC copyright by Vincotech 600 1200 Thermal grease thickness≤50um λ = 1 W/mK Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,35 1,90 1,84 2,05 112 V µA 0,17 K/W 0,11 4 Revision: 4 70-W424NIA800SH-M800F target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Value Tj Min Typ Unit Max DC link Capacitor DC link Capacitor C Transient+ to Neutral and Transient- to Neutral 4*0.47 µF Thermistor Rated resistance R Deviation of R25 ∆R/R Power dissipation P T=25°C R100=1486 Ω T=25°C Power dissipation constant Ω 22000 -5 +5 % T=25°C 200 mW Tj=25°C 2 mW/K K B-value B(25/50) Tol. ±3% Tj=25°C 3950 B-value B(25/100) Tol. ±3% Tj=25°C 3996 Vincotech NTC Reference K B Module Properties Module inductance (from chips to PCB) LsCE 5 Module inductance (from PCB to PCB using Intercon board) LsCE 5 nH tbd. mΩ Chip module lead resistance, terminals -chip Rcc'1+EE' Tc=25°C, per switch Resistance of Intercon boards (from PCB to PCB using Intercon board) Rcc'1+EE' Mounting torque M Mounting torque M Terminal connection torque M Weight G copyright by Vincotech nH 1,5 Screw M4 - mounting according to valid application note FSWB1-4TY-M-*-HI Screw M5 - mounting according to valid application note FSWB1-4TY-M-*-HI Screw M6 - mounting according to valid application note FSWB1-4TY-M-*-HI 5 mΩ 2 2,2 4 6 Nm Nm 2,5 5 Nm tbd g Revision: 4 70-W424NIA800SH-M800F target datasheet Ordering Code and Marking - Pinout Ordering Code & Marking Version Standard Ordering Code 70-W424NIA800SH-M800F in DataMatrix as M800F in packaging barcode as M800F Pinout copyright by Vincotech 6 Revision: 4 70-W424NIA800SH-M800F target datasheet Outline Driver pins Pin X1 Y1 Function 1.1 -2,15 81,95 E11 Group T1 1.2 1.3 -2,15 46,15 84,85 81,95 G11 E13 T1 T1 1.4 46,15 84,85 G13 T1 1.5 19,45 93,05 DC+ sense T1 1.6 24,55 93,05 DC+ sense T1 1.7 -7,65 67,15 E12 T2 T2 1.8 -7,65 70,05 G12 1.9 51,65 67,15 E14 T2 1.10 51,65 70,05 G14 T2 1.11 -5,45 28,00 E15 T3 1.12 -2,55 28,00 G15 T3 1.13 46,55 28,00 G17 T3 1.14 49,45 28,00 E17 T3 1.15 -4,80 50,85 G16 T4 1.16 -1,60 49,05 E16 T4 1.17 45,60 49,05 E18 T4 1.18 48,80 50,85 G18 T4 1.19 16,75 75,35 GND sense D5 1.20 27,25 75,35 GND sense D5 1.21 67,65 86,70 NTC2 NTC 1.22 67,65 89,80 NTC1 NTC 1.23 98,85 81,95 E21 T1 1.24 98,85 84,85 G21 T1 1.25 147,15 81,95 E23 T1 1.26 147,15 84,85 G23 T1 1.27 120,45 93,05 DC+ sense T1 1.28 125,55 93,05 DC+ sense T1 1.29 93,35 67,15 E22 T2 1.30 93,35 70,05 G22 T2 1.31 1.32 152,65 152,65 67,15 70,05 E24 G24 T2 T2 1.33 95,55 28,00 E25 T3 1.34 98,45 28,00 G25 T3 1.35 147,55 28,00 G27 T3 1.36 150,45 28,00 E27 T3 1.37 96,20 50,85 G26 T4 1.38 99,40 49,05 E26 T4 1.39 146,60 49,05 E28 T4 1.40 149,80 50,85 G28 T4 1.41 1.42 117,75 128,25 75,35 75,35 GND sense GND sense D5 D5 1.43 1.44 168,65 168,65 86,70 89,80 NTC2 NTC1 NTC NTC Low current connections M4 screw X3 Y3 3.1 -39,10 89,80 Function TR+ 3.2 184,10 89,80 TR+ 3.3 -39,10 65,20 DC+ 3.4 184,10 65,20 DC+ 3.5 -39,10 45,20 DC- 3.6 184,10 45,20 DC- 3.7 -39,10 20,60 TR- 3.8 184,10 20,60 TR- 3.9 -39,10 89,80 GND 3.10 184,10 89,80 GND 3.11 3.12 -39,10 184,10 45,20 45,20 GND GND Power connections M6 screw X2 Y2 2.1 0 0,00 Function Phase 2.2 22 0,00 Phase Phase 2.3 44 0,00 2.4 0,00 110,40 DC+ 2.5 22,00 110,40 GND 2.6 44,00 110,40 DC- 2.7 101,00 0,00 Phase 2.8 123,00 0,00 Phase 2.9 145,00 0,00 Phase 2.10 101 110,4 DC+ 2.11 2.12 123 145 110,4 110,4 GND DCTolerance of pinpositions: ±0,5mm at the end of pins PCB holes and connection parameters of pins see in the handling instruction document copyright by Vincotech 7 Revision: 4 70-W424NIA800SH-M800F target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 8 Revision: 4