V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time* Kurzschlußverhalten* max. Chip temperature max. Chiptemperatur Tj=175°C Th=80°C, Tc=80°C VCE 600 V IC 27,5 35,6 90 A 47,7 72 ±20 W 6 360 175 us V °C 26 35,6 60 A W Tjmax 37 55 175 °C Tstg -40…+125 °C Top -40…+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm tp limited by Tj max Icpuls Tj=175°C Ptot Th=80°C Tc=80°C VGE Tj150°C VCC=360V VGE=15V tSC Tjmax A V Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Tj=175°C Th=80°C, Tc=80°C IF tp limited by Tj max IFRM Tj=175°C Ptot Th=80°C Tc=80°C A Thermal properties Thermische Eigenschaften Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke Additional notes and remarks: Copyright by Vincotech t=1min * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! 1 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Characteristic values/ Charateristische Werte Description Symbol Conditions T(C°) Transistor Inverter Transistor Wechselrichter Gate emitter threshold voltage VGE(th) Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Gate charge Gate Ladung Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Coupled thermal resistance inverter diode-transistor Gekoppelte Wärmewiderstand Wechselrichter Diode-Transistor Coupled thermal resistance inverter transistor-transistor Gekoppelte Wärmewiderstand Wechselrichter Transistor-Transistor Tj=25°C Datasheet values Other conditions (Rgon-Rgoff) VR(V) VGE(V) VCE(V) VGS(V) VDS(V) VCE=VGE Unit IC(A) IF(A) Id(A) Min Typ Max 430u 5 5,8 6,5 V 1,54 1,71 2,1 V Tj=150°C VCE(sat) Tj=25°C Tj=125°C ICES Tj=25°C Tj=150°C IGES Tj=25°C Tj=150°C Rgint td(on) 15 Cies Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 f=1MHz Coss Tj=25°C Crss Tj=25°C QGate Tj=25°C td(off) tf Eon Eoff 0 600 0,2 mA 20 0 350 nA none Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C tr 30 ns ±15 300 30 95 ±15 300 30 18,7 ±15 300 30 158,5 ±15 300 30 83,2 ±15 300 30 0,4958 ±15 0 300 25 30 0,8233 1,63 nF f=1MHz 0 25 0,1 nF f=1MHz 0 25 0,05 nF ns ns ns mWs mWs nC Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH RthJC Ohm 1,99 K/W K/W RthJH tbd K/W RthJH tbd K/W Diode Inverter Diode Wechselrichter Diode forward voltage Durchlaßspannung Peak reverse recovery current Rückstromspitze Reverse recovery time Sperreverzögerungszeit Reverse recovered charge Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Coupled thermal resistance inverter transistor-diode Gekoppelte Wärmewiderstand Wechselrichter Transistor-Diode Coupled thermal resistance inverter diode-diode Gekoppelte Wärmewiderstand Wechselrichter Diode-Diode Copyright by Vincotech VF IRM trr Qrr Erec RthJH RthJC Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK 300 30 1,47 1,44 ±15 300 30 41,24 ±15 300 30 155,7 ±15 300 30 2,3044 ±15 300 30 0,5087 2,2 V A ns uC mWs 2,61 K/W K/W RthJH K/W RthJH K/W 2 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Output inverter Figure 1. Typical output characteristics Output inverter IGBT Figure 2. Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 70 IC (A) IC (A) 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 VCE (V) 4 5 0 1 2 3 4 VCE (V) parameter: tp = 250 us Tj = 25 °C VGE parameter: from: 7 V to 17 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGE parameter: from: 7 V to 17 V in 1 V steps Figure 3. Figure 4. Typical transfer characteristics Output inverter IGBT Ic= f(VGE) 30 5 Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED IC (A) IF (A) 70 60 25 50 20 125 oC 40 15 30 125 oC 10 20 25 oC 5 10 25 oC 0 0 0 3 6 9 V GE (V) parameter: tp = 250 us VCE = Copyright by Vincotech 0 12 10 V 0,5 1 1,5 2 VF (V) 2,5 parameter: tp = 250 us 3 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Output inverter Figure 5. Typical switching energy losses as a function of collector current Output inverter IGBT Figure 6. Typical switching energy losses as a function of gate resistor Output inverter IGBT E = f (RG) E = f (Ic) 1,6 Eon E (mWs) E (mWs) 1,6 Eoff 1,2 1,2 Eoff Erec 0,8 0,8 Erec 0,4 0,4 Eon 0 0 0 10 20 30 40 50 I C (A) 0 60 15 30 inductive load, Tj = 125 °C VCE = 300 V VGE= ±15 V Rgon= 16 Rgoff= 16 inductive load, Tj = 125 °C VCE = 300 V VGE= ±15 V Ic = 30 A Figure 7. Figure 8. Typical switching times as a function of collector current Output inverter IGBT 45 60 R G ( : ) 75 Typical switching times as a function of gate resistor Output inverter IGBT t = f (RG) t = f (Ic) 1 t ( Ps) t ( Ps) 1 tdoff tdon tdoff tf tdon 0,1 0,1 tf tr 0,01 tr 0,01 0,001 0,001 0 10 20 30 40 50 IC (A) 60 0 inductive load, Tj = 125 °C VCE = 300 V VGE= ±15 V Rgon= 16 Rgoff= 16 Copyright by Vincotech 15 30 45 60 RG (: ) 75 inductive load, Tj = 125 °C VCE = 300 V VGE= ±15 V Ic = 30 A 4 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Output inverter Figure 9. Typical reverse recovery time as a function of IGBT turn on gate resistor Output inverter FRED diode Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode IRRM = f (Rgon) 70 0,4 IrrM (A) t rr( Ps) trr = f (Rgon) 0,35 60 0,3 50 0,25 40 0,2 30 0,15 20 0,1 10 0,05 0 0 0 15 Tj = VR = IF= VGE= 30 125 300 30 ±15 45 60 R Gon ( : ) 75 0 °C V A V 30 Tj = VR = IF= VGE= Figure 11. Typical reverse recovery charge as a function of IGBT turn on gate resistor Output inverter FRED diode 125 300 30 ±15 60 R Gon ( : ) 45 75 °C V A V Figure 12. Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 3 4500 direc / dt (A/ Ps) Qrr ( PC) 15 2,5 4000 3500 3000 2 2500 1,5 2000 1500 1 dI0/dt dIrec/dt 1000 0,5 500 0 0 0 15 Tj = VR = IF= VGE= 30 125 300 30 ±15 45 60 R Gon ( :) 75 0 °C V A V Copyright by Vincotech 15 Tj = VR = IF= VGE= 5 30 125 300 30 ±15 45 60 R Gon ( :) 75 °C V A V Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Output inverter Figure 13. IGBT transient thermal impedance as a function of pulse width Figure 14. FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 1 1 10 ZthJH (K/W) ZthJH (K/W) 10 100 0 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 -2 10 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 10-5 101 RthJH= 1,99 K/W 10-4 10-3 10-2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,05 0,29 0,79 0,46 0,24 0,10 0,08 Tau (s) 8,4E+00 9,9E-01 2,0E-01 4,0E-02 7,6E-03 6,1E-04 1,1E-04 Copyright by Vincotech 0,07 0,26 0,93 0,68 0,35 0,15 0,18 6 10-1 100 t p (s) 101 RthJH= 2,61 K/W Tau (s) 7,6E+00 8,7E-01 1,5E-01 3,7E-02 6,5E-03 8,8E-04 1,6E-04 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Output inverter Figure 15. Power dissipation as a function of heatsink temperature Output inverter IGBT Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 50 Ptot (W) IC (A) 100 40 75 30 50 20 25 10 0 0 0 50 100 150 o Th ( C) 0 200 50 100 150 o Th ( C) 200 parameter: Tj= 175 ºC parameter: Tj= 175 ºC VGE= 15 V Figure 17. Power dissipation as a function of heatsink temperature Output inverter FRED Figure 18. Forward current as a function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 75 IF (A) Ptot (W) 50 60 40 45 30 30 20 15 10 0 0 0 50 100 150 o Th ( C) 200 0 100 150 o Th ( C) 200 parameter: Tj= 175 ºC parameter: Tj= 175 ºC Copyright by Vincotech 50 7 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Thermistor Figure 19. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R/ 25000 20000 15000 10000 5000 0 25 50 75 Copyright by Vincotech 100 T (°C) 125 8 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Switching definitions General conditions: Figure 1. Tj= 125 °C Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter IGBT Figure 2. 8 Rgoff= 8 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter IGBT 320 140 120 Ic 280 tdoff 100 240 Uce 90% Uge 90% 80 200 60 Ic 160 % 120 % tEoff 40 20 Uce 80 0 Uge tdon Ic 1% 40 Uce Uge Uge10% -20 Uce3% Ic10% 0 -40 -0,3 tEon -40 -0,2 -0,1 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. 0 0,1 -15 15 300 30 0,13 0,47 0,2 0,3 time (us) 0,4 0,5 0,6 0,7 2,5 V V V A us us 2,6 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdon= tEon= Turn-off Switching Waveforms & definition of tf Output inverter IGBT Figure 4. 140 2,7 -15 15 300 30 0,06 0,15 2,8 time(us) 2,9 3 3,1 V V V A us us Turn-on Switching Waveforms & definition of tr Output inverter IGBT 300 Ic 120 260 fitted Ic Uce 220 100 Ic 90% 180 80 % 140 Ic 60% % 60 Uce 40 100 Ic 40% Ic90% tr 60 20 Ic10% tf 0 20 Ic10% -20 -0,15 -0,05 0,05 0,15 time (us) 0,25 0,35 -20 2,75 0,45 Uc(100%)= 300 V Ic(100%)= 30 A tf= 0,114 us Copyright by Vincotech 2,775 2,8 2,825 time(us) 2,85 2,875 2,9 Uc(100%)= 300 V Ic(100%)= 30 A tr= 0,012 us 9 Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter IGBT Figure 6. 120 Turn-on Switching Waveforms & definition of tEon Output inverter IGBT 120 Eon Eoff 100 100 Poff 80 80 60 60 Pon % 40 %40 20 20 Uge10% 0 Uce3% 0 tEoff Uge90% tEon Ic 1% -20 -20 -0,2 -0,1 0 Poff(100%)= Eoff(100%)= tEoff= 0,1 0,2 0,3 time (us) 0,4 0,5 0,6 2,6 0,7 2,7 2,8 2,9 3 3,1 time(us) 8,97 kW 0,87 mJ 0,47 us Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. Output inverter IGBT 20 120 15 80 8,97 kW 0,24 mJ 0,15 us Turn-off Switching Waveforms & definition of trr Output inverter FRED Id trr 40 10 0 Uge (V) 5 Ud -40 IRRM10% % 0 -80 -5 -120 fitted -10 -160 -15 -200 -20 -100 IRRM90% IRRM100% -240 0 100 200 300 2,6 400 2,7 2,8 2,9 time(us) Qg (nC) Ugeoff= Ugeon= Uc(100%)= Ic(100%)= Qg= -15 15 300 30 365 V V V A nC Copyright by Vincotech Ud(100%)= Id(100%)= IRRM(100%)= trr= 10 300 30 59 0,07 3 3,1 3,2 V A A us Revision: 1 V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter FRED Figure 10. Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter FRED 220 150 Qrr Prec 100 180 Id 50 tQint 140 0 % -50 Erec % 100 -100 60 tErec -150 20 -200 -20 -250 2,6 2,7 2,8 2,9 3 time(us) 3,1 3,2 2,6 3,3 Id(100%)= 30 A Qrr(100%)= 2,381 uC tQint= 0,30 us Copyright by Vincotech 2,7 Prec(100%)= Erec(100%)= tErec= 11 2,8 2,9 3 time(us) 3,1 3,2 3,3 8,97 kW 0,62 mJ 0,30 us Revision: 1