V23990-P722-F74-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F74-01-14 P722-F74 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V Id 32 A Idpuls 115 A Transistor H-bridge(MOSFET) Drain to source breakdown voltage Pulsed drain current Tj=Tjmax tp=1ms Th=80°C, Tc=80°C Th=80°C, Tc=80°C Avalanche energy, single pulse ID=10A VDD=50V EAS 1800 mJ Avalanche energy, repetitive ID=20A VDD=50V EAR 1 mJ Avalanche current, repetitive Tj=Tjmax IAR 20 A Drain source voltage slope Is=46A Tj=125°C VDS=480V dv/dt 80 V/ns Th=80°C, Tc=80°C Ptot 173 W Vgs ±20 V Tjmax 150 °C IF 52 A IFRM 115 A DC drain current Power dissipation Tj=Tjmax Tj=Tjmax Gate-source peak voltage max. Chip temperature Diode H-bridge(BODY DIODE) DC forward current Repetitive peak forward current Tj=Tjmax Th=80°C, Tc=80°C tp limited by Tj max Reverse diode dv/dt Is=46A Tj=125°C VDS=480V dv/dt 40 V/ns Max. diode commutation speed Is=46A Tj=125°C VDS=480V di/dt 600 A/us Th=80°C Tc=80°C Ptot 173 W Power dissipation per Diode Copyright by Vincotech Tj=Tjmax 1 Revision: 1 V23990-P722-F74-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F74-01-14 P722-F74 600V/30A Symbol Datasheet values Unit max. Thermal properties Storage temperature Operation temperature Tstg -40…+125 °C Top -40…+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm Insulation properties Insulation voltage t=1min Creepage distance Clearance Additional notes and remarks: Copyright by Vincotech * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! 2 Revision: 1 V23990-P722-F74-PM final data sheet fastPACK 0 H 2nd gen Characteristic values/ Charateristische Werte Description V23990-P722-F74-01-14 P722-F74 600V Symbol Conditions T(C°) Unit Datasheet values Other conditions (Rgon-Rgoff) VGE(V) VGS(V) VCE(V) IC(A) IF(A) VDS(V) Id(A) Min Typ 46 700 30 0,074 0,16 4 Max Transistor H-bridge(MOSFET) Avalanche breakdown voltage Static drain to source ON resistance Gate threshold voltage Drain to Source breakdown voltage Drain to Source Leakage Current Gate-emitter leakage current Turn On Delay Time Rise Time Turn off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Turn-on energy loss per pulse Turn-off energy loss per pulse Input capacitance Output capacitance Reverse transfer capacitance V(BR)DS Rds(on) V(GS)th V(BR)DSS Idss IGES td(ON) tr td(OFF) tf Qg Qgs Qgd Eon Eoff Ciss Coss Cies 0 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 10 Rgon=4 Ohm Rgoff=1 Ohm Rgon=4 Ohm Rgoff=1 Ohm Rgon=4 Ohm Rgoff=1 Ohm Rgon=4 Ohm Rgoff=1 Ohm Rgon=4 Ohm Rgoff=1 Ohm Rgon=4 Ohm Rgoff=1 Ohm f=1 MHz 400 VGS=VDS 2.9m 3 0 0.25m 600 RthJH 5 Ohm V V 0 600 6 20 0 uA 10 400 30 40,5 10 400 30 16,3 10 400 30 168,5 10 10 400 480 30 46 39,3 250 nC 10 480 46 55 nC 10 480 46 130 100 nA ns ns ns ns nC mWs 10 400 30 4,4 10 0 400 25 30 0,07 7,7 nF f=1 MHz 0 25 2,2 nF f=1 MHz 0 25 0,077 nF 0,4 K/W mWs Thermal grease thickness50um Thermal resistance chip to heatsink per chip V 0,09 Diode H-bridge(BODY DIODE) Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Reverse recovered energy VF Tj=25°C IRM Tj=125°C Tj=25°C Rgon=4 10 400 30 132,6 trr Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Rgon=4 10 400 30 117 Qrr RthJH Tj=25°C Tj=125°C Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip 30 0,6 1 1,8 V 0,9 A ns uC Rgon=4 10 400 30 9,7 Rgon=4 Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK 10 400 30 0,65 mWs 0,4 K/W K/W NTC-Thermistor NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Copyright by Vincotech R25 Tj=25°C Tol. ±5% DR/R Tc=100°C R100=1503 P Tj=25°C B(25/100) Tj=25°C Tol. ±3% 3 20,9 22 23,1 k 2,9 %/K 210 mW 3980 K Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Output inverter Figure 1. Typical output characteristics Figure 2. Typical output characteristics Output inverter MOSFET Output inverter MOSFET Ic= f(V DS) Ic= f(V DS) 70 IC (A) IC (A) 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 VDS (V) 4 5 0 1 2 3 4 VDS(V) 5 parameter: tp = 250 us Tj = 25 °C VGS parameter: from: 2 V to 12 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGS parameter: from: 2 V to 12 V in 1 V steps Figure 3. Typical transfer characteristics Figure 4. Output inverter MOSFET Ic= f(V GS) 30 Typical diode forward current as a function of forward voltage Output inverter MOSFET IF=f(VF) IC (A) IF (A) 70 60 25 50 20 125 oC 40 15 125 oC 30 25 oC 25 oC 10 20 5 10 0 0 0 1,5 3 4,5 6 V GS (V) parameter: tp = 250 us VDS = Copyright by Vincotech 7,5 0 10 V 0,3 0,6 0,9 1,2 VF (V) 1,5 parameter: tp = 250 us 4 Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Output inverter Figure 5. Typical switching energy losses Figure 6. Typical switching energy losses as a function of gate resistor Output inverter MOSFET as a function of collector current Output inverter MOSFET E = f (RG) E = f (Ic) 0,75 E (mWs) E (mWs) 0,75 Eoff 0,6 0,6 Erec 0,45 0,45 0,3 0,3 Eoff Erec 0,15 0,15 0 0 0 10 20 30 40 50 I C (A) 60 0 15 30 inductive load, Tj = 125 °C VDS = 400 V VGS= 10 V Rgon= 4 Rgoff= 1 inductive load, Tj = 125 °C VDS = 400 V VGS= 10 V Ic = 30 A Figure 7. Typical switching times as a Figure 8. 45 60 R G ( : ) 75 Typical switching times as a function of gate resistor Output inverter MOSFET function of collector current Output inverter MOSFET t = f (R G) t = f (Ic) 1 t ( Ps) t ( Ps) 1 tdoff tdon tdoff tr 0,1 0,1 tdon tr tf tf 0,01 0,01 0,001 0,001 0 10 20 30 40 50 IC (A) 60 0 inductive load, Tj = 125 °C VDS = 400 V VGS= 10 V Rgon= 4 Rgoff= 1 Copyright by Vincotech 15 30 45 60 RG (:) 75 inductive load, Tj = 125 °C VDS = 400 V VGS= 10 V Ic = 30 A 5 Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Output inverter Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter MOSFET FRED diode function of IGBT turn on gate resistor Output inverter MOSFET FRED diode trr = f (Rgon) IRRM = f (Rgon) 150 0,3 IrrM (A) t rr( Ps) Figure 9. Typical reverse recovery time as a 0,25 125 0,2 100 0,15 75 0,1 50 0,05 25 0 0 0 15 Tj = VR = I F= VGS= 30 125 400 30 10 45 60 R Gon ( : ) 75 0 15 °C V A V 30 Tj = VR = I F= VGS= Figure 11. Typical reverse recovery charge as a 45 60 R Gon ( : ) 75 °C V A V Figure 12. Typical rate of fall of forward function of IGBT turn on gate resistor Output inverter MOSFET FRED diode and reverse recovery current as a function of IGBT turn on gate resistor Output inverter MOSFET FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 10 8000 direc / dt (A/ Ps) Qrr ( PC) 125 400 30 10 8 7000 6000 5000 6 4000 dIrec/dt 4 3000 2000 2 dI0/dt 1000 0 0 0 15 Tj = VR = I F= VGS= 30 125 400 30 10 45 60 R Gon ( :) 75 0 °C V A V Copyright by Vincotech 15 Tj = VR = I F= VGS= 6 30 125 400 30 10 45 60 R Gon ( :) 75 °C V A V Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Output inverter Figure 13. MOSFET transient thermal impedance as a function of pulse width ZthJH = f(tp) 0 ZthJH (K/W) 10 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -2 10 -5 10 -4 10 -3 10 10 -2 Parameter: D = tp / T -1 10 0 10 t p (s) 10 1 RthJH= 0,40 K/W MOSFET thermal model values R (C/W) 0,02 0,08 0,10 0,14 0,04 0,03 Tau (s) 1,6E+01 1,6E+00 2,0E-01 5,3E-02 3,0E-03 3,3E-04 Copyright by Vincotech 7 Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Output inverter Figure 14. Power dissipation as a Figure 16. Collector current as a function of heatsink temperature Output inverter MOSFET function of heatsink temperature Output inverter MOSFET Ptot = f (Th) Ic = f (Th) 35 IC (A) Ptot (W) 400 350 30 300 25 250 20 200 15 150 10 100 5 50 0 0 0 50 100 150 o Th ( C) 0 200 parameter: Tj= 150 ºC 50 100 150 Th ( o C) 200 parameter: Tj= 150 ºC VGS= 10 V function of drain-surce voltage Output inverter MOSFET ID = f (V DS) ID (A) 103 10uS 102 100uS 1mS 1 10 10mS DC 100mS 100 10-1 10 10 1 V DS (V) 102 103 Parameter: D = 0 Th = 80 °C Copyright by Vincotech 8 Revision: 1 V23990-P722-F74-PM fastPACK0 H 2nd gen V23990-P722F74 Thermistor Figure 18. Typical NTC characteristic as a function of temperature RT = f (T) NTC-typical temperature characteristic R/ 25000 20000 15000 10000 5000 0 25 50 Copyright by Vincotech 75 100 T (°C) 125 9 Revision: 1 V23990-P722-F74-PM fastPACK 0 H 2nd gen V23990-P722F74 Switching definitions General conditions: Figure 1. Tj= 125 °C Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter MOSFET 140 Figure 2. tdoff1 120 8 Rgoff= 2 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter MOSFET 360 tdoff2 310 Uce Uge 100 260 80 Ic % 60 % 160 tEoff1 40 210 Uce 110 20 Ic 0 tdon1 60 10 -20 -40 -0,1 tEon2 -40 0 0,1 0,2 0,3 0,4 2,7 Uge Ic10% Uge10% 2,75 2,8 tEon1 Uce3% 2,85 2,9 0 10 400 31 0,06 0,21 V V V A us us time (us) Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. 0 10 400 31 0,18 0,22 V V V A us us without capacitor with capacitor Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdon= tEon= Turn-off Switching Waveforms & definition of tf Output inverter MOSFET Figure 4. 140 2,95 3 time(us) 3,05 3,1 3,15 3,2 without capacitor with capacitor Turn-on Switching Waveforms & definition of tr Output inverter MOSFET 460 120 fitted Ic Uce 380 Ic 100 Ic 90% 300 80 Ic 60% 60 % 220 % 40 Ic 40% 140 20 Ic10% 60 tf -20 Ic90% Uce 0 tr Ic10% -20 2,75 -40 0 0,05 0,1 0,15 time (us) 0,2 0,25 0,3 Uc(100%)= 400 V Ic(100%)= 31 A tf= 0,018 us Copyright by Vincotech 2,8 2,85 2,9 2,95 time(us) 3 3,05 3,1 Uc(100%)= 400 V Ic(100%)= 31 A tr= 0,028 us 10 Revision: 1 V23990-P722-F74-PM fastPACK 0 H 2nd gen V23990-P722F74 Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter MOSFET Figure 6. 140 Turn-on Switching Waveforms & definition of tEon Output inverter MOSFET 510 Eoff 120 430 100 350 80 Pon 270 60 % 40 % Poff 190 20 0 tEoff Uge10% 30 Ic 1% -20 -40 -0,2 Eon 110 Uge90% Uce3% tEon -50 -0,1 0 0,1 time (us) 0,2 0,3 2,6 0,4 2,7 Poff(100%)= 12,24 kW Eoff(100%)= 0,09 mJ tEoff= 0,22 us Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. Output inverter MOSFET 13 140 10 60 7 -20 4 %-100 1 -180 -2 -260 2,8 2,9 time(us) 3 3,1 3,2 12,2 kW 3,63 mJ 0,21 us Turn-off Switching Waveforms & definition of trr Output inverter MOSFET FRED Id trr Uge (V) Ud IRRM10% fitted IRRM90% IRRM100% -5 -100 -340 0 100 200 300 2,6 400 2,75 2,9 Ugeoff= 0 Ugeon= 10 Uc(100%)= 400 Ic(100%)= 31 Qg= 367,7 Copyright by Vincotech 3,05 3,2 3,35 time(us) Qg (nC) V V V A nC Ud(100%)= Id(100%)= IRRM(100%)= trr= 11 400 31 86 0,13 V A A us Revision: 1 V23990-P722-F74-PM fastPACK 0 H 2nd gen V23990-P722F74 Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter MOSFET FRED Figure 10. 200 Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter MOSFET FRED 200 Id Qrr 150 100 tQint Erec 100 0 tErec % % 50 -100 Prec 0 -200 -50 -300 2,6 2,75 2,9 time(us) 3,05 3,2 2,6 3,35 Id(100%)= 31 A Qrr(100%)= 6,502 uC tQint= 0,26 us Copyright by Vincotech 2,75 Prec(100%)= Erec(100%)= tErec= 12 2,9 time(us) 3,05 3,2 3,35 12,2 kW 0,54 mJ 0,26 us Revision: 1