EML4 / UML4N Transistors General purpose transistor (isolated transistor and diode) EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (5) (4) 1.6 1.2 1pin mark (1) (2) (3) zStructure PNP Silicon epitaxial planar transistor Schottky barrier diode The following characteristics apply to both Di1 and Tr2. 0.13 0.22 Each lead has same dimensions Abbreviated symbol : L4 ROHM : EMT5 UMT5 2.0 1.3 zEquivalent circuit 0.9 0.65 0.65 0.7 (4) 0.2 0.15 0.1Min. (1) (2) (3) 1pin mark Di1 2.1 1.25 (5) (4) (5) Tr2 Each lead has same dimensions (1) (2) (3) Abbreviated symbol : L4 ROHM : UMT5 EIAJ : SC-88A zPackaging specifications Type EML4 UML4N Package EMT5 UMT5 Marking Code L4 L4 T2R TR Basic ordering unit(pieces) 8000 3000 Rev.C 1/4 EML4 / UML4N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average rectified forward current IFSM Forward current surge peak (60HZ, 1∞) VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V °C Limits −15 −12 −6 −500 −1 120 150 Unit V V V mA A mW °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj ∗ ∗ Each terminal mounted on a recommended. Di1 / DTr2 Parameter Power dissipation Storage temperature Symbol Pd Tstg Limits 150 −55 to +125 Unit mW °C ∗ ∗ Each terminal mounted on a recommended. zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF IR − − 0.40 4.0 0.50 30 V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Rev.C 2/4 EML4 / UML4N Transistors zElectrical characteristic curves Di1 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 Ta=75℃ 1000 100 Ta=25℃ 10 10 Ta=-25℃ 1 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=125℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 100000 1000 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 0.4 DC CURRENT GAIN : hFE C C 0.6 0.8 Ta=25°C 1.0 1.2 Ta=−40°C 100 10 1 1.4 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.3 Grounded emitter propagation characteristics Fig.4 DC current gain vs. 10000 IC/IB=20 Pulsed Ta=125°C 100 Ta=25°C Ta=−40°C 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 Ta=25°C Ta=−40°C Ta=125°C 100 10 1 10 Ta=25°C Pulsed 100 IC/IB=50 IC/IB=20 IC/IB=10 10 1 1 10 100 100 1000 1000 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Base-emitter saturation voltage Fig.8 Gain bandwidth product vs. collector current 1000 COLLECTOR CURRENT : IC (mA) vs. collector current ( Ι ) IC/IB=20 Pulsed 1000 1000 Fig.5 Collector-emitter saturation voltage collector current TRANSITION FREQUENCY : fT (MHz) 0.2 Ta= −40° 5°C 0 Ta=25° 10 VCE=2V Pulsed Ta=125°C 100 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 1000 VCE=2V Pulsed Ta=12 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Tr2 1000 vs. emitter current Rev.C 2/4 EML4 / UML4N 1000 IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 TRANSITION FREQUENCY : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Transistors Ta=25°C Single Pulsed 1 10ms 100ms 1ms DC 0.1 0.01 0.001 0.01 0.1 1 10 100 EMITTER CURRENT : VCE (V) Fig.10 Safe operation area Rev.C 3/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0