Si8430/31/35 L O W - P O W E R T R I P L E - C H A N N E L D I G I TA L I S O L A T O R Features High-speed operation DC Up to 2500 VRMS isolation to 150 Mbps 60-year life at rated working No start-up initialization required voltage Wide Operating Supply Voltage: Precise timing (typical) 2.70–5.5 V <10 ns worst case Wide Operating Supply Voltage: 1.5 ns pulse width distortion 2.70–5.5V 0.5 ns channel-channel skew 2 ns propagation delay skew Ultra low power (typical) 6 ns minimum pulse width 5 V Operation: Transient Immunity 25 kV/µs < 1.6 mA per channel at 1 Mbps < 6 mA per channel at 100 Mbps AEC-Q100 qualified 2.70 V Operation: Wide temperature range < N ot fo R r N ec e w om m D e e s nd ig e ns d 1.4 mA per channel at 1 Mbps –40 to 125 °C at 150 Mbps 4 mA per channel at 100 Mbps RoHS-compliant packages High electromagnetic immunity SOIC-16 wide body SOIC-16 narrow body < Applications Industrial automation systems Hybrid electric vehicles Isolated switch mode supplies Isolated ADC, DAC Motor control Power inverters Communications systems Ordering Information: See page 27. Safety Regulatory Approvals UL 1577 recognized Up to 2500 VRMS for 1 minute CSA component notice 5A approval IEC VDE certification conformity IEC 60747-5-2 (VDE0884 Part 2) 60950-1, 61010-1 (reinforced insulation) Description Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering substantial data rate, propagation delay, power, size, reliability, and external BOM advantages when compared to legacy isolation technologies. The operating parameters of these products remain stable across wide temperature ranges throughout their service life, and only VDD bypass capacitors are required. Data rates up to 150 Mbps are supported, and all devices achieve worst-case propagation delays of less than 10 ns. All products are safety certified by UL, CSA, and VDE and support withstand voltages of up to 2.5 kVRMS. These devices are available in 16-pin wide- and narrow-body SOIC packages. Rev. 1.6 9/13 Copyright © 2013 by Silicon Laboratories Si8430/31/35 N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430/31/35 2 Rev. 1.6 Si8430/31/35 TABLE O F C ONTENTS Section Page N ot fo R r N ec e w om m D e e s nd ig e ns d 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.4. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.5. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3. Errata and Design Migration Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.1. Enable Pin Causes Outputs to Go Low (Revision C Only) . . . . . . . . . . . . . . . . . . . . 25 3.2. Power Supply Bypass Capacitors (Revision C and Revision D) . . . . . . . . . . . . . . . . 25 3.3. Latch Up Immunity (Revision C Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6. Package Outline: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 7. Land Pattern: 16-Pin Wide-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 9. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 10. Top Marking: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 10.1. 16-Pin Wide Body SOIC Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 10.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 11. Top Marking: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 11.1. 16-Pin Narrow Body SOIC Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 11.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 Rev. 1.6 3 Si8430/31/35 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit TA 150 Mbps, 15 pF, 5 V –40 25 125* °C VDD1 2.70 — 5.5 V VDD2 2.70 — 5.5 V Ambient Operating Temperature* Supply Voltage N ot fo R r N ec e w om m D e e s nd ig e ns d *Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply voltage. Table 2. Absolute Maximum Ratings1 Parameter Symbol Min Typ Max Unit Storage Temperature2 TSTG –65 — 150 °C Operating Temperature TA –40 — 125 °C Supply Voltage (Revision C)3 VDD1, VDD2 –0.5 — 5.75 V 3 VDD1, VDD2 –0.5 — 6.0 V Input Voltage VI –0.5 — VDD + 0.5 V Output Voltage VO –0.5 — VDD + 0.5 V Output Current Drive Channel IO — — 10 mA Lead Solder Temperature (10 s) — — 260 °C Maximum Isolation Voltage (1 s) — — 3600 VRMS Supply Voltage (Revision D) Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of this data sheet. 2. VDE certifies storage temperature from –40 to 150 °C. 3. See "5. Ordering Guide" on page 27 for more information. 4 Rev. 1.6 Si8430/31/35 Table 3. Electrical Characteristics (VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL — — 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 – 0.4 4.8 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V IL — — ±10 µA ZO — 85 — Input Leakage Current 1 N ot fo R r N ec e w om m D e e s nd ig e ns d Output Impedance Enable Input High Current IENH VENx = VIH — 2.0 — µA Enable Input Low Current IENL VENx = VIL — 2.0 — µA DC Supply Current (All inputs 0 V or at Supply) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.2 1.9 4.2 1.9 1.8 2.9 6.3 2.9 mA Si8431Ax, Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.7 2.0 3.7 3.0 2.6 3.0 5.6 4.5 mA 1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 — — 2.7 2.2 4.1 3.3 mA Si8431Ax, Bx VDD1 VDD2 — — 2.8 2.7 4.2 4.1 mA 10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs) Si8430Bx, Si8435Bx VDD1 VDD2 — — 2.7 3.0 4.1 4.2 mA Si8431Bx VDD1 VDD2 — — 3.1 3.2 4.3 4.5 mA Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. Rev. 1.6 5 Si8430/31/35 Table 3. Electrical Characteristics (Continued) (VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit 100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs) — — 2.9 14.3 4.4 17.9 mA Si8431Bx VDD1 VDD2 — — 7.0 11.0 8.8 13.8 mA N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430Bx, Si8435Bx VDD1 VDD2 Timing Characteristics Si843xAx Maximum Data Rate 0 — 1.0 Mbps Minimum Pulse Width — — 250 ns tPHL, tPLH See Figure 2 — — 35 ns PWD See Figure 2 — — 25 ns tPSK(P-P) — — 40 ns tPSK — — 35 ns Maximum Data Rate 0 — 150 Mbps Minimum Pulse Width — — 6.0 ns Propagation Delay Pulse Width Distortion |tPLH - tPHL| Propagation Delay Skew2 Channel-Channel Skew Si843xBx Propagation Delay Pulse Width Distortion |tPLH - tPHL| Propagation Delay Skew2 Channel-Channel Skew tPHL, tPLH See Figure 2 3.0 6.0 9.5 ns PWD See Figure 2 — 1.5 2.5 ns tPSK(P-P) — 2.0 3.0 ns tPSK — 0.5 1.8 ns Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. 6 Rev. 1.6 Si8430/31/35 Table 3. Electrical Characteristics (Continued) (VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit Output Rise Time tr CL = 15 pF See Figure 2 — 3.8 5.0 ns Output Fall Time tf CL = 15 pF See Figure 2 — 2.8 3.7 ns CMTI VI = VDD or 0 V — 25 — kV/µs All Models N ot fo R r N ec e w om m D e e s nd ig e ns d Common Mode Transient Immunity Enable to Data Valid3 ten1 See Figure 1 — 5.0 8.0 ns Enable to Data Tri-State3 ten2 See Figure 1 — 7.0 9.2 ns Start-up Time3,4 tSU — 15 40 µs Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. Rev. 1.6 7 Si8430/31/35 ENABLE OUTPUTS ten1 ten2 N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 1. ENABLE Timing Diagram 1.4 V Typical Input tPLH tPHL 90% 90% 10% 10% 1.4 V Typical Output tr tf Figure 2. Propagation Delay Timing 8 Rev. 1.6 Si8430/31/35 Table 4. Electrical Characteristics (VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL — — 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 – 0.4 3.1 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V — — ±10 µA IL N ot fo R r N ec e w om m D e e s nd ig e ns d Input Leakage Current Output Impedance1 ZO — 85 — Enable Input High Current IENH VENx = VIH — 2.0 — µA Enable Input Low Current IENL VENx = VIL — 2.0 — µA DC Supply Current (All inputs 0 V or at supply) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.2 1.9 4.2 1.9 1.8 2.9 6.3 2.9 mA Si8431Ax, Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.7 2.0 3.7 3.0 2.6 3.0 5.6 4.5 mA 1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 — — 2.7 2.2 4.1 3.3 mA Si8431Ax, Bx VDD1 VDD2 — — 2.8 2.7 4.2 4.1 mA Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. Rev. 1.6 9 Si8430/31/35 Table 4. Electrical Characteristics (Continued) (VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit 10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs) — — 2.7 3.0 4.1 4.2 mA Si8431Bx VDD1 VDD2 — — 3.1 3.2 4.3 4.5 mA N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430Bx, Si8435Bx VDD1 VDD2 100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs) Si8430Bx, Si8435Bx VDD1 VDD2 — — 2.8 10.1 4.2 12.6 mA Si8431Bx VDD1 VDD2 — — 5.5 8.0 6.9 10.0 mA Maximum Data Rate 0 — 1.0 Mbps Minimum Pulse Width — — 250 ns Timing Characteristics Si843xAx Propagation Delay Pulse Width Distortion |tPLH - tPHL| Propagation Delay Skew2 Channel-Channel Skew tPHL, tPLH See Figure 2 — — 35 ns PWD See Figure 2 — — 25 ns tPSK(P-P) — — 40 ns tPSK — — 35 ns Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. 10 Rev. 1.6 Si8430/31/35 Table 4. Electrical Characteristics (Continued) (VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit Maximum Data Rate 0 — 150 Mbps Minimum Pulse Width — — 6.0 ns Si843xBx Propagation Delay Propagation Delay Skew2 Channel-Channel Skew All Models See Figure 2 3.0 6.0 9.5 ns PWD See Figure 2 — 1.5 2.5 ns N ot fo R r N ec e w om m D e e s nd ig e ns d Pulse Width Distortion |tPLH - tPHL| tPHL, tPLH tPSK(P-P) — 2.0 3.0 ns tPSK — 0.5 1.8 ns Output Rise Time tr CL = 15 pF See Figure 2 — 4.3 6.1 ns Output Fall Time tf CL = 15 pF See Figure 2 — 3.0 4.3 ns CMTI VI = VDD or 0 V — 25 — kV/µs Enable to Data Valid3 ten1 See Figure 1 — 5.0 8.0 ns Enable to Data Tri-State3 ten2 See Figure 1 — 7.0 9.2 ns Start-up Time3,4 tSU — 15 40 µs Common Mode Transient Immunity Notes: 1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 4. Start-up time is the time period from the application of power to valid data at the output. Rev. 1.6 11 Si8430/31/35 Table 5. Electrical Characteristics1 (VDD1 = 2.70 V, VDD2 = 2.70 V, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL — — 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 – 0.4 2.3 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V IL — — ±10 µA ZO — 85 — N ot fo R r N ec e w om m D e e s nd ig e ns d Input Leakage Current Output Impedance2 Enable Input High Current IENH VENx = VIH — 2.0 — µA Enable Input Low Current IENL VENx = VIL — 2.0 — µA DC Supply Current (All inputs 0 V or at supply) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.2 1.9 4.2 1.9 1.8 2.9 6.3 2.9 mA Si8431Ax, Bx VDD1 VDD2 VDD1 VDD2 All inputs 0 DC All inputs 0 DC All inputs 1 DC All inputs 1 DC — — — — 1.7 2.0 3.7 3.0 2.6 3.0 5.6 4.5 mA 1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs) Si8430Ax, Bx and Si8435Bx VDD1 VDD2 — — 2.7 2.2 4.1 3.3 mA Si8431Ax, Bx VDD1 VDD2 — — 2.8 2.7 4.2 4.1 mA Notes: 1. Specifications in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is constrained to TA = 0 to 85 °C. 2. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 5. Start-up time is the time period from the application of power to valid data at the output. 12 Rev. 1.6 Si8430/31/35 Table 5. Electrical Characteristics1 (Continued) (VDD1 = 2.70 V, VDD2 = 2.70 V, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit 10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs) — — 2.7 3.0 4.1 4.2 mA Si8431Bx VDD1 VDD2 — — 3.1 3.2 4.3 4.5 mA N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430Bx, Si8435Bx VDD1 VDD2 100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs) Si8430Bx, Si8435Bx VDD1 VDD2 — — 2.8 8.0 4.2 10 mA Si8431Bx VDD1 VDD2 — — 4.7 6.7 5.9 8.4 mA Maximum Data Rate 0 — 1.0 Mbps Minimum Pulse Width — — 250 ns Timing Characteristics Si843xAx Propagation Delay Pulse Width Distortion |tPLH - tPHL| Propagation Delay Skew3 Channel-Channel Skew tPHL, tPLH See Figure 2 — — 35 ns PWD See Figure 2 — — 25 ns tPSK(P-P) — — 40 ns tPSK — — 35 ns Notes: 1. Specifications in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is constrained to TA = 0 to 85 °C. 2. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 5. Start-up time is the time period from the application of power to valid data at the output. Rev. 1.6 13 Si8430/31/35 Table 5. Electrical Characteristics1 (Continued) (VDD1 = 2.70 V, VDD2 = 2.70 V, TA = –40 to 125 ºC; applies to narrow and wide-body SOIC packages) Parameter Symbol Test Condition Min Typ Max Unit Maximum Data Rate 0 — 150 Mbps Minimum Pulse Width — — 6.0 ns Si843xBx Propagation Delay Propagation Delay Skew3 Channel-Channel Skew All Models See Figure 2 3.0 6.0 9.5 ns PWD See Figure 2 — 1.5 2.5 ns N ot fo R r N ec e w om m D e e s nd ig e ns d Pulse Width Distortion |tPLH - tPHL| tPHL, tPLH tPSK(P-P) — 2.0 3.0 ns tPSK — 0.5 1.8 ns Output Rise Time tr CL = 15 pF See Figure 2 — 4.8 6.5 ns Output Fall Time tf CL = 15 pF See Figure 2 — 3.2 4.6 ns CMTI VI = VDD or 0 V — 25 — kV/µs Enable to Data Valid4 ten1 See Figure 1 — 5.0 8.0 ns Enable to Data Tri-State4 ten2 See Figure 1 — 7.0 9.2 ns — 15 40 µs Common Mode Transient Immunity Start-up Time 4,5 tSU Notes: 1. Specifications in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is constrained to TA = 0 to 85 °C. 2. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. See "3. Errata and Design Migration Guidelines" on page 25 for more details. 5. Start-up time is the time period from the application of power to valid data at the output. 14 Rev. 1.6 Si8430/31/35 Table 6. Regulatory Information* CSA The Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. 61010-1: Up to 600 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. 60950-1: Up to 130 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage. VDE The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL N ot fo R r N ec e w om m D e e s nd ig e ns d 60747-5-2: Up to 560 Vpeak for basic insulation working voltage. The Si84xx is certified under UL1577 component recognition program. For more details, see File E257455. Rated up to 2500 VRMS isolation voltage for basic insulation. *Note: Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec. For more information, see "5. Ordering Guide" on page 27. Table 7. Insulation and Safety-Related Specifications Value Parameter Symbol Test Condition WB NB SOIC-16 SOIC-16 Unit Nominal Air Gap (Clearance)1 L(IO1) 8.0 4.9 mm Nominal External Tracking (Creepage)1 L(IO2) 8.0 4.01 mm 0.008 0.008 mm 600 600 VRMS Minimum Internal Gap (Internal Clearance) Tracking Resistance (Proof Tracking Index) PTI Erosion Depth ED 0.040 0.019 mm Resistance (Input-Output)2 RIO 1012 1012 Capacitance (Input-Output)2 CIO 2.0 2.0 pF 4.0 4.0 pF Input Capacitance3 CI IEC60112 f = 1 MHz Notes: 1. The values in this table correspond to the nominal creepage and clearance values as detailed in “6. Package Outline: 16-Pin Wide Body SOIC” and “8. Package Outline: 16-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-16 package and 7.6 mm minimum for the WB SOIC-16 package. 2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 are shorted together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are then measured between these two terminals. 3. Measured from input pin to ground. Rev. 1.6 15 Si8430/31/35 Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings Parameter Test Condition Basic Isolation Group Specification Material Group Rated Mains Voltages < 150 VRMS I-IV Rated Mains Voltages < 300 VRMS I-III Rated Mains Voltages < 400 VRMS I-II Rated Mains Voltages < 600 VRMS I-II N ot fo R r N ec e w om m D e e s nd ig e ns d Installation Classification I Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB* Parameter Symbol Maximum Working Insulation Voltage Characteristic Unit 560 V peak VIORM Input to Output Test Voltage Transient Overvoltage Test Condition V peak VPR Method b1 (VIORM x 1.875 = VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 1050 VIOTM t = 60 sec 4000 2 Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance at TS, VIO = 500 V RS V peak >109 *Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of 40/125/21. Table 10. IEC Safety Limiting Values1 Max Parameter Symbol Case Temperature TS Safety input, output, or supply current IS Device Power Dissipation2 PD Test Condition JA = 100 °C/W (WB SOIC-16), 105 °C/W (NB SOIC-16), VI = 5.5 V, TJ = 150 °C, TA = 25 °C Min Typ WB SOIC-16 NB SOIC-16 Unit — — 150 150 °C — — 220 210 mA — — 275 275 mW Notes: 1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4. 2. The Si843x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square wave. 16 Rev. 1.6 Si8430/31/35 Table 11. Thermal Characteristics Typ Parameter Symbol IC Junction-to-Air Thermal Resistance JA Test Condition Min — WB NB SOIC-16 SOIC-16 100 105 Max Unit — ºC/W 500 Safety-Limiting Current (mA) N ot fo R r N ec e w om m D e e s nd ig e ns d 450 VDD1, VDD2 = 2.70 V 400 370 VDD1, VDD2 = 3.6 V 300 220 200 VDD1, VDD2 = 5.5 V 100 0 0 50 100 Temperature (ºC) 150 200 Figure 3. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Safety-Limiting Current (mA) 500 430 VDD1, VDD2 = 2.70 V 400 360 VDD1, VDD2 = 3.6 V 300 210 200 VDD1, VDD2 = 5.5 V 100 0 0 50 100 Temperature (ºC) 150 200 Figure 4. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Rev. 1.6 17 Si8430/31/35 2. Functional Description 2.1. Theory of Operation The operation of an Si843x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified block diagram for a single Si843x channel is shown in Figure 5. Transmitter Receiver A N ot fo R r N ec e w om m D e e s nd ig e ns d RF OSCILLATOR MODULATOR SemiconductorBased Isolation Barrier DEMODULATOR B Figure 5. Simplified Channel Diagram A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See Figure 6 for more details. Input Signal Modulation Signal Output Signal Figure 6. Modulation Scheme 18 Rev. 1.6 Si8430/31/35 2.2. Eye Diagram N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 7 illustrates an eye-diagram taken on an Si8430. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8430 were captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that 2 ns pulse width distortion and 250 ps peak jitter were exhibited. Figure 7. Eye Diagram Rev. 1.6 19 Si8430/31/35 2.3. Device Operation Device behavior during start-up, normal operation, and shutdown is shown in Table 12. Table 13 provides an overview of the output states when the Enable pins are active. Table 12. Si84xx Logic Operation Table VI Input1,2 EN Input1,2,3,4 VDDI State1,5,6 VDDO VO Output1,2 State1,5,6 H H or NC P P H L H or NC P P L Comments Enabled, normal operation. L P P Hi-Z or L8 X7 H or NC UP P L X7 L UP P Hi-Z or L8 X7 N ot fo R r N ec e w om m D e e s nd ig e ns d X7 X7 P UP Disabled. Upon transition of VDDI from unpowered to powered, VO returns to the same state as VI in less than 1 µs. Disabled. Upon transition of VDDO from unpowered to powered, VO returns to the same state as VI Undetermined within 1 µs, if EN is in either the H or NC state. Upon transition of VDDO from unpowered to powered, VO returns to Hi-Z with 1 µs if EN is L. Notes: 1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and output terminals. EN is the enable control input located on the same output side. 2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance. 3. It is recommended that the enable inputs be connected to an external logic high or low level when the Si84xx is operating in noisy environments. 4. No Connect (NC) replaces EN1 on Si8430/35. No Connect replaces EN2 on the Si8435. No Connects are not internally connected and can be left floating, tied to VDD, or tied to GND. 5. "Powered" state (P) is defined as 2.70 V < VDD < 5.5 V. 6. "Unpowered" state (UP) is defined as VDD = 0 V. 7. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current. 8. When using the enable pin (EN) function, the output pin state is driven to a logic low state when the EN pin is disabled (EN = 0) in Revision C. Revision D outputs go into a high-impedance state when the EN pin is disabled (EN = 0). See "3. Errata and Design Migration Guidelines" on page 25 for more details. 20 Rev. 1.6 Si8430/31/35 Table 13. Enable Input Truth Table1 Si8430 Si8431 Si8435 Operation EN11,2 EN21,2 — H Outputs B1, B2, B3 are enabled and follow input state. — L Outputs B1, B2, B3 are disabled and Logic Low or in high impedance state.3 H X Output A3 enabled and follows input state. L X Output A3 disabled and Logic Low or in high impedance state.3 X H Outputs B1, B2 are enabled and follow input state. N ot fo R r N ec e w om m D e e s nd ig e ns d P/N X L Outputs B1, B2 are disabled and Logic Low or in high impedance state.3 — — Outputs B1, B2, B3 are enabled and follow input state. Notes: 1. Enable inputs EN1 and EN2 can be used for multiplexing, for clock sync, or other output control. These inputs are internally pulled-up to local VDD by a 3 µA current source allowing them to be connected to an external logic level (high or low) or left floating. To minimize noise coupling, do not connect circuit traces to EN1 or EN2 if they are left floating. If EN1, EN2 are unused, it is recommended they be connected to an external logic level, especially if the Si84xx is operating in a noisy environment. 2. X = not applicable; H = Logic High; L = Logic Low. 3. When using the enable pin (EN) function, the output pin state is driven to a logic low state when the EN pin is disabled (EN = 0) in Revision C. Revision D outputs go into a high-impedance state when the EN pin is disabled (EN = 0). See "3. Errata and Design Migration Guidelines" on page 25 for more details. Rev. 1.6 21 Si8430/31/35 2.4. Layout Recommendations To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 VAC) must be physically separated from the safety extra-low voltage circuits (SELV is a circuit with <30 VAC) by a certain distance (creepage/clearance). If a component, such as a digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating (commonly referred to as working voltage protection). Table 6 on page 15 and Table 7 on page 15 detail the working voltage and creepage/clearance capabilities of the Si84xx. These tables also detail the component standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, etc.) requirements before starting any design that uses a digital isolator. N ot fo R r N ec e w om m D e e s nd ig e ns d The following sections detail the recommended bypass and decoupling components necessary to ensure robust overall performance and reliability for systems using the Si84xx digital isolators. 2.4.1. Supply Bypass Digital integrated circuit components typically require 0.1 µF (100 nF) bypass capacitors when used in electrically quiet environments. However, digital isolators are commonly used in hazardous environments with excessively noisy power supplies. To counteract these harsh conditions, it is recommended that an additional 1 µF bypass capacitor be added between VDD and GND on both sides of the package. The capacitors should be placed as close as possible to the package to minimize stray inductance. If the system is excessively noisy, it is recommended that the designer add 50 to 100 resistors in series with the VDD supply voltage source and 50 to 300 resistors in series with the digital inputs/outputs (see Figure 8). For more details, see "3. Errata and Design Migration Guidelines" on page 25. All components upstream or downstream of the isolator should be properly decoupled as well. If these components are not properly decoupled, their supply noise can couple to the isolator inputs and outputs, potentially causing damage if spikes exceed the maximum ratings of the isolator (6 V). In this case, the 50 to 300 resistors protect the isolator's inputs/outputs (note that permanent device damage may occur if the absolute maximum ratings are exceeded). Functional operation should be restricted to the conditions specified in Table 1, “Recommended Operating Conditions,” on page 4. 2.4.2. Pin Connections No connect pins are not internally connected. They can be left floating, tied to VDD, or tied to GND. 2.4.3. Output Pin Termination The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. The series termination resistor values should be scaled appropriately while keeping in mind the recommendations described in “2.4.1. Supply Bypass” above. V Source 1 R1 (50 – 100 ) V Source 2 R2 (50 – 100 ) VDD1 C1 VDD2 50 – 300 0.1 F A1 0.1 F B1 C2 1 F C4 50 – 300 C3 Input/Output Input/Output 1 F Bx Ax 50 – 300 50 – 300 GND1 GND2 Figure 8. Recommended Bypass Components for the Si84xx Digital Isolator Family 22 Rev. 1.6 Si8430/31/35 2.5. Typical Performance Characteristics The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Tables 3, 4, and 5 for actual specification limits. 30 30 25 20 5V 15 3.3V 10 Current (mA) Current (mA) 25 2.70V 5 5V 20 3.3V 15 10 2.70V 5 N ot fo R r N ec e w om m D e e s nd ig e ns d 0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 Data Rate (Mbps) Data Rate (Mbps) Figure 9. Si8430/35 Typical VDD1 Supply Current vs. Data Rate 5, 3.3, and 2.70 V Operation 30 20 Current (mA) Current (mA) Figure 12. Si8430/35 Typical VDD2 Supply Current vs. Data Rate 5, 3.3, and 2.70 V Operation (15 pF Load) 30 25 5V 15 3.3V 10 5 25 5V 20 3.3V 15 10 5 2.70V 0 2.70V 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 Data Rate (Mbps) 10 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Data Rate (Mbps) Figure 10. Si8431 Typical VDD1 Supply Current vs. Data Rate 5, 3.3, and 2.70 V Operation Figure 13. Si8431 Typical VDD2 Supply Current vs. Data Rate 5, 3.3, and 2.70 V Operation (15 pF Load) Falling Edge 9 Delay (ns) 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 8 7 Rising Edge 6 5 -40 -20 0 20 40 60 80 100 120 Temperature (Degrees C) Figure 11. Propagation Delay vs. Temperature Rev. 1.6 23 N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430/31/35 Figure 14. Si84xx Time-Dependent Dielectric Breakdown 24 Rev. 1.6 Si8430/31/35 3. Errata and Design Migration Guidelines The following errata apply to Revision C devices only. See "5. Ordering Guide" on page 27 for more details. No errata exist for Revision D devices. 3.1. Enable Pin Causes Outputs to Go Low (Revision C Only) When using the enable pin (EN1, EN2) function on the 3-channel (Si8430/1) isolators, the corresponding output pin states (pin = An, Bn, where n can be 1…3) are driven to a logic low (to ground) when the enable pin is disabled (EN1 or EN2 = 0). This functionality is different from the legacy 3-channel (Si8430/1) isolators. On those devices, the isolator outputs go into a high-impedance state (Hi-Z) when the enable pin is disabled (EN1 = 0 or EN2 = 0). 3.1.1. Resolution N ot fo R r N ec e w om m D e e s nd ig e ns d The enable pin functionality causing the outputs to go low is supported in production for Revision C of the Si84xx devices. Revision D corrects the enable pin functionality (i.e., the outputs will go into the high-impedance state to match the legacy isolator products). Refer to the Ordering Guide sections of the data sheet(s) for current ordering information. 3.2. Power Supply Bypass Capacitors (Revision C and Revision D) When using the Si84xx isolators with power supplies > 4.5 V, sufficient VDD bypass capacitors must be present on both the VDD1 and VDD2 pins to ensure the VDD rise time is less than 0.5 V/µs (which is > 9 µs for a > 4.5 V supply). Although rise time is power supply dependent, > 1 µF capacitors are required on both power supply pins (VDD1, VDD2) of the isolator device. 3.2.1. Resolution For recommendations on resolving this issue, see "2.4.1. Supply Bypass" on page 22. Additionally, refer to "5. Ordering Guide" on page 27 for current ordering information. 3.3. Latch Up Immunity (Revision C Only) Latch up immunity generally exceeds ± 200 mA per pin. Exceptions: Certain pins provide < 100 mA of latch-up immunity. To increase latch-up immunity on these pins, 100 of equivalent resistance must be included in series with all of the pins listed in Table 14. The 100 equivalent resistance can be comprised of the source driver's output resistance and a series termination resistor. The Si8431 is not affected when using power supply voltages (VDD1 and VDD2) < 3.5 V. 3.3.1. Resolution This issue has been corrected with Revision D of the device. Refer to “5. Ordering Guide” for current ordering information. Table 14. Affected Ordering Part Numbers (Revision C Only) Affected Ordering Part Numbers* SI8430SV-C-IS/IS1, SI8431SV-C-IS/IS1 SI8435SV-C-IS/IS1 Device Revision C C Pin# Name Pin Type 5 A3 Input or Output 10 EN2 Input 14 B1 Output 5 A3 Input 14 B1 Output *Note: "SV" = Speed Grade/Isolation Rating (AA, AB, BA, BB). Rev. 1.6 25 Si8430/31/35 4. Pin Descriptions VDD1 VDD1 VDD2 GND2 GND1 RF XMITR A1 RF XMITR A2 RF XMITR A3 NC I s o l a t i o n RF RCVR A1 RF XMITR A2 RF XMITR B3 A3 RF RCVR NC NC B2 RF RCVR I s o l a t i o n GND2 Si8430/35 GND1 Type VDD1 1 Supply Side 1 power supply. GND1 2 Ground Side 1 ground. A1 3 Digital Input Side 1 digital input. 4 Digital Input Side 1 digital input. 5 Digital I/O 6 NA EN1/NC2 7 Digital Input GND1 8 Ground Side 1 ground. GND2 9 Ground Side 2 ground. EN2/NC2 10 Digital Input NC 11 NA 12 Digital I/O 13 Digital Output Side 2 digital output. 14 Digital Output Side 2 digital output. GND2 15 Ground Side 2 ground. VDD2 16 Supply Side 2 power supply. B3 B2 B1 B3 Si8431 SOIC-16 Pin# NC B2 RF XMITR NC EN2 Name A3 B1 RF RCVR N ot fo R r N ec e w om m D e e s nd ig e ns d GND1 A2 RF RCVR EN1 EN2/NC NC GND2 GND1 B1 RF RCVR VDD2 GND2 Description1 Side 1 digital input or output. No Connect. Side 1 active high enable. NC on Si8430/35 Side 2 active high enable. NC on Si8435. No Connect. Side 2 digital input or output. Notes: 1. For narrow-body devices, Pin 2 and Pin 8 GND must be externally connected to respective ground. Pin 9 and Pin 15 must also be connected to external ground. 2. No Connect. These pins are not internally connected. They can be left floating, tied to VDD or tied to GND. 26 Rev. 1.6 Si8430/31/35 5. Ordering Guide These devices are not recommended for new designs. Please see the Si863x data sheet for replacement options. Table 15. Ordering Guide for Valid OPNs1 Ordering Part Number (OPN) Alternative Part Number of Number of Number (APN) Inputs VDD1 Inputs VDD2 Side Side Maximum Data Rate (Mbps) Isolation Rating Package Type Revision D Devices2 Si8630AB-B-IS 3 0 1 N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430AB-D-IS Si8430BB-D-IS Si8630BB-B-IS 3 0 150 Si8431AB-D-IS Si8631AB-B-IS 2 1 1 Si8431BB-D-IS Si8631BB-B-IS 2 1 150 Si8435BB-D-IS Si8635BB-B-IS 3 0 150 Si8430AB-D-IS1 Si8630AB-B-IS1 3 0 1 Si8430BB-D-IS1 Si8630BB-B-IS1 3 0 150 Si8431AB-D-IS1 Si8631AB-B-IS1 2 1 1 Si8431BB-D-IS1 Si8631BB-B-IS1 2 1 150 Si8435BB-D-IS1 Si8635BC-B-IS1 3 0 150 2.5 kVrms WB SOIC-161,3 2.5 kVrms NB SOIC-161 Notes: 1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications and peak solder temperatures. Moisture sensitivity level is MSL2A for wide-body SOIC-16 packages. Moisture sensitivity level is MSL2A for narrow-body SOIC-16 packages. 2. Revision C and Revision D devices are supported for existing designs. 3. AEC-Q100 qualified. Rev. 1.6 27 Si8430/31/35 Table 15. Ordering Guide for Valid OPNs1 (Continued) Ordering Part Number (OPN) Alternative Part Number of Number of Number (APN) Inputs VDD1 Inputs VDD2 Side Side Maximum Data Rate (Mbps) Isolation Rating Package Type 2.5 kVrms WB SOIC-161 Revision C Devices2 Si8630AB-B-IS 3 0 1 Si8430BB-C-IS Si8630BB-B-IS 3 0 150 Si8431AB-C-IS Si8631AB-B-IS 2 1 1 Si8431BB-C-IS Si8631BB-B-IS 2 1 150 Si8435BB-C-IS Si8635BB-B-IS 3 0 150 Si8430AB-C-IS1 Si8630AB-B-IS1 3 0 1 Si8430BB-C-IS1 Si8630BB-B-IS1 3 0 150 Si8431AB-C-IS1 Si8631AB-B-IS1 2 1 1 Si8431BB-C-IS1 Si8631BB-B-IS1 2 1 150 Si8435BB-C-IS1 Si8635BC-B-IS1 3 0 150 N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430AB-C-IS 2.5 kVrms NB SOIC-161 Notes: 1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications and peak solder temperatures. Moisture sensitivity level is MSL2A for wide-body SOIC-16 packages. Moisture sensitivity level is MSL2A for narrow-body SOIC-16 packages. 2. Revision C and Revision D devices are supported for existing designs. 3. AEC-Q100 qualified. 28 Rev. 1.6 Si8430/31/35 6. Package Outline: 16-Pin Wide Body SOIC N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 15 illustrates the package details for the Triple-Channel Digital Isolator. Table 16 lists the values for the dimensions shown in the illustration. Figure 15. 16-Pin Wide Body SOIC Table 16. Package Diagram Dimensions Millimeters Symbol Min Max A — 2.65 A1 0.1 0.3 D 10.3 BSC E 10.3 BSC E1 7.5 BSC b 0.31 0.51 c 0.20 0.33 e 1.27 BSC h 0.25 0.75 L 0.4 1.27 0° 7° Rev. 1.6 29 Si8430/31/35 7. Land Pattern: 16-Pin Wide-Body SOIC N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 16 illustrates the recommended land pattern details for the Si843x in a 16-pin wide-body SOIC. Table 17 lists the values for the dimensions shown in the illustration. Figure 16. 16-Pin SOIC Land Pattern Table 17. 16-Pin Wide Body SOIC Land Pattern Dimensions Dimension Feature (mm) C1 Pad Column Spacing 9.40 E Pad Row Pitch 1.27 X1 Pad Width 0.60 Y1 Pad Length 1.90 Notes: 1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN for Density Level B (Median Land Protrusion). 2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed. 30 Rev. 1.6 Si8430/31/35 8. Package Outline: 16-Pin Narrow Body SOIC N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 17 illustrates the package details for the Si84xx in a 16-pin narrow-body SOIC (SO-16). Table 18 lists the values for the dimensions shown in the illustration. Figure 17. 16-pin Small Outline Integrated Circuit (SOIC) Package Table 18. Package Diagram Dimensions Dimension Min Max A — 1.75 A1 0.10 0.25 A2 1.25 — b 0.31 0.51 c 0.17 0.25 D 9.90 BSC E 6.00 BSC E1 3.90 BSC e 1.27 BSC L 0.40 L2 1.27 0.25 BSC Rev. 1.6 31 Si8430/31/35 Table 18. Package Diagram Dimensions (Continued) Dimension Min Max h 0.25 0.50 θ 0° 8° 0.10 bbb 0.20 ccc 0.10 ddd 0.25 N ot fo R r N ec e w om m D e e s nd ig e ns d aaa Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid State Outline MS-012, Variation AC. 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 32 Rev. 1.6 Si8430/31/35 9. Land Pattern: 16-Pin Narrow Body SOIC N ot fo R r N ec e w om m D e e s nd ig e ns d Figure 18 illustrates the recommended land pattern details for the Si843x in a 16-pin narrow-body SOIC. Table 19 lists the values for the dimensions shown in the illustration. Figure 18. 16-Pin Narrow Body SOIC PCB Land Pattern Table 19. 16-Pin Narrow Body SOIC Land Pattern Dimensions Dimension Feature (mm) C1 Pad Column Spacing 5.40 E Pad Row Pitch 1.27 X1 Pad Width 0.60 Y1 Pad Length 1.55 Notes: 1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N for Density Level B (Median Land Protrusion). 2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed. Rev. 1.6 33 Si8430/31/35 10. Top Marking: 16-Pin Wide Body SOIC 10.1. 16-Pin Wide Body SOIC Top Marking N ot fo R r N ec e w om m D e e s nd ig e ns d Si84XYSV YYWWTTTTTT e3 TW 10.2. Top Marking Explanation Line 1 Marking: Line 2 Marking: Line 3 Marking: Si84 = Isolator product series XY = Channel Configuration Base Part Number X = # of data channels (3, 2, 1) Ordering Options Y = # of reverse channels (1, 0)* S = Speed Grade (See Ordering Guide for more A = 1 Mbps; B = 150 Mbps information). V = Insulation rating A = 1 kV; B = 2.5 kV YY = Year WW = Workweek Assigned by Assembly House TTTTTT = Mfg Code Manufacturing Code from Assembly House Circle = 1.5 mm Diameter (Center-Justified) “e3” Pb-Free Symbol Country of Origin ISO Code Abbreviation TW = Taiwan *Note: Si8435 has 0 reverse channels. 34 Rev. 1.6 Si8430/31/35 11. Top Marking: 16-Pin Narrow Body SOIC 11.1. 16-Pin Narrow Body SOIC Top Marking e3 Si84XYSV YYWWTTTTTT N ot fo R r N ec e w om m D e e s nd ig e ns d 11.2. Top Marking Explanation Line 1 Marking: Line 2 Marking: Base Part Number Ordering Options (See Ordering Guide for more information). Si84 = Isolator product series XY = Channel Configuration X = # of data channels (3, 2, 1) Y = # of reverse channels (1, 0)* S = Speed Grade A = 1 Mbps; B = 150 Mbps V = Insulation rating A = 1 kV; B = 2.5 kV Circle = 1.2 mm Diameter “e3” Pb-Free Symbol YY = Year WW = Work Week Assigned by the Assembly House. Corresponds to the year and work week of the mold date. TTTTTT = Mfg code Manufacturing Code from Assembly Purchase Order form. Circle = 1.2 mm diameter “e3” Pb-Free Symbol. *Note: Si8435 has 0 reverse channels. Rev. 1.6 35 Si8430/31/35 DOCUMENT CHANGE LIST Revision 1.0 to Revision 1.1 Revision 0.32 to Revision 0.33 Updated notes in tables to reflect output impedance of 85 . Updated rise and fall time specifications. Updated CMTI value. Rev 0.33 is the first revision of this document that applies to the new series of ultra low power isolators featuring pinout and functional compatibility with previous isolator products. Updated “1. Electrical Specifications”. Updated “5. Ordering Guide”. Added “10. Top Marking: 16-Pin Wide Body SOIC”. Revision 1.1 to Revision 1.2 Updated document throughout to include MSL improvements to MSL2A. Updated "5. Ordering Guide" on page 27. Revision 0.33 to Revision 0.34 Updated Note 1 in ordering guide table to reflect improvement and compliance to MSL2A moisture sensitivity level. N ot fo R r N ec e w om m D e e s nd ig e ns d Updated all specs to reflect latest silicon. Revision 0.34 to Revision 0.35 Revision 1.2 to Revision 1.3 Updated all specs to reflect latest silicon. Added "3. Errata and Design Migration Guidelines" on page 25. Added "11. Top Marking: 16-Pin Narrow Body SOIC" on page 35. Revision 0.35 to Revision 1.0 Updated document to reflect availability of Revision D silicon. Updated Tables 3,4, and 5. Updated Updated " Features" on page 1. Moved Tables 1 and 2 to page 4. Updated Tables 6, 7, 8, and 9. Updated Table 12 footnotes. Added Figure 14, “Si84xx Time-Dependent Dielectric Breakdown,” on page 24. Revision 1.3 to Revision 1.4 Updated "2.4.1. Supply Bypass" on page 22. Added Figure 8, “Recommended Bypass Components for the Si84xx Digital Isolator Family,” on page 22. Updated "3.2. Power Supply Bypass Capacitors (Revision C and Revision D)" on page 25. Note 3. Updated "3. Errata and Design Migration Guidelines" on page 25. Updated "5. Ordering Guide" on page 27. 36 Revision 1.4 to Revision 1.5 Note 7. Updated Table 13. Updated clearance and creepage dimensions. Updated Table 12. Updated absolute maximum supply voltage. Updated Table 7. Updated all supply currents and channel-channel skew. Updated Table 2. Updated Updated Tables 3, 4, and 5. Updated "5. Ordering Guide" on page 27 to include MSL2A. Revision 1.5 to Revision 1.6 Rev. 1.6 Updated "5. Ordering Guide" on page 27 to include new title note and “ Alternative Part Number (APN)” column. N ot fo R r N ec e w om m D e e s nd ig e ns d Si8430/31/35 NOTES: Rev. 1.6 37 Si8430/31/35 CONTACT INFORMATION Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel: 1+(512) 416-8500 Fax: 1+(512) 416-9669 Toll Free: 1+(877) 444-3032 N ot fo R r N ec e w om m D e e s nd ig e ns d Please visit the Silicon Labs Technical Support web page: https://www.silabs.com/support/pages/contacttechnicalsupport.aspx and register to submit a technical support request. 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