Si866x Data Sheet

Si8660/61/62/63
L O W P O W E R S I X - C HANNEL D IGITA L I SOLATOR
Features
High-speed operation
DC to 150 Mbps
 No start-up initialization required
 Wide Operating Supply Voltage
2.5–5.5 V
 Up to 5000 VRMS isolation

60-year life at rated working voltage
High electromagnetic immunity
 Ultra low power (typical)
5 V Operation
1.6 mA per channel at 1 Mbps
5.5 mA per channel at 100 Mbps
2.5 V Operation
1.5 mA per channel at 1 Mbps
3.5 mA per channel at 100 Mbps
 Schmitt trigger inputs








Selectable fail-safe mode
Default high or low output
(ordering option)
Precise timing (typical)
10 ns propagation delay
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
5 ns minimum pulse width
Transient Immunity 50 kV/µs
AEC-Q100 qualification
Wide temperature range
–40 to 125 °C
RoHS-compliant packages
SOIC-16 wide body
SOIC-16 narrow body
Applications




Industrial automation systems
Medical electronics
Hybrid electric vehicles
Isolated switch mode supplies




Isolated ADC, DAC
Motor control
Power inverters
Communication systems

VDE certification conformity
IEC 60747-5-2
(VDE0884 Part 2)
EN60950-1
(reinforced insulation)

CQC certification approval
Ordering Information:
See page 30.
Safety Regulatory Approvals

UL 1577 recognized
Up to 5000 VRMS for 1 minute

CSA component notice 5A approval
IEC 60950-1, 61010-1, 60601-1
(reinforced insulation)
GB4943.1
Description
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices
offering substantial data rate, propagation delay, power, size, reliability, and
external BOM advantages over legacy isolation technologies. The operating
parameters of these products remain stable across wide temperature ranges
and throughout device service life for ease of design and highly uniform
performance. All device versions have Schmitt trigger inputs for high noise
immunity and only require VDD bypass capacitors.
Data rates up to 150 Mbps are supported, and all devices achieve propagation
delays of less than 10 ns. Ordering options include a choice of isolation ratings
(2.5, 3.75 and 5 kV) and a selectable fail-safe operating mode to control the
default output state during power loss. All products >1 kVRMS are safety
certified by UL, CSA, VDE, and CQC, and products in wide-body packages
support reinforced insulation withstanding up to 5 kVRMS.
Rev. 1.6 6/15
Copyright © 2015 by Silicon Laboratories
Si8660/61/62/63
Si8660/61/62/63
2
Rev. 1.6
Si8660/61/62/63
TABLE O F C ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1. Device Startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
3.2. Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.3. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4. Fail-Safe Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.5. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
4. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6. Package Outline: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7. Land Pattern: 16-Pin Wide-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
9. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
10. Top Markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
10.1. Si866x Top Marking (16-Pin Wide Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
10.2. Top Marking Explanation (16-Pin Wide Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . 37
10.3. Si866x Top Marking (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . 38
10.4. Top Marking Explanation (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . . . . . . . . 38
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
Rev. 1.6
3
Si8660/61/62/63
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Operating Temperature*
Supply Voltage
Symbol
Min
Typ
Max
Unit
TA
–40
25
125
°C
VDD1
2.5
—
5.5
V
VDD2
2.5
—
5.5
V
*Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels,
and supply voltage.
Table 2. Electrical Characteristics
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage
Threshold
VDDUV+
VDD1, VDD2 rising
1.95
2.24
2.375
V
VDD Undervoltage
Threshold
VDDUV–
VDD1, VDD2 falling
1.88
2.16
2.325
V
VDD Undervoltage
Hysteresis
VDDHYS
50
70
95
mV
Positive-Going Input
Threshold
VT+
All inputs rising
1.4
1.67
1.9
V
Negative-Going
Input Threshold
VT–
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
VHYS
0.38
0.44
0.50
V
High Level Input Voltage
VIH
2.0
—
—
V
Low Level Input Voltage
VIL
—
—
0.8
V
High Level Output Voltage
VOH
loh = –4 mA
VDD1,VDD2 – 0.4
4.8
—
V
Low Level Output Voltage
VOL
lol = 4 mA
—
0.2
0.4
V
Input Leakage Current
IL
—
—
±10
µA
ZO
—
50
—

1
Output Impedance
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
4
Rev. 1.6
Si8660/61/62/63
Table 2. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Supply Current (All inputs 0 V or at Supply)
Si8660Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
Si8661Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
Si8662Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
Si8663Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
mA
mA
mA
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.2
7.0
5.9
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
4.9
4.6
6.9
6.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.1
4.7
7.1
6.6
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
4.9
4.9
6.8
6.8
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
5
Si8660/61/62/63
Table 2. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
5.9
7.0
8.3
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
5.2
6.1
7.3
8.5
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.6
5.9
7.9
8.2
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
5.7
5.7
8.0
8.0
mA
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
26.2
7.0
34.1
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
8.8
23
11.8
29.8
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
12.8
19.4
16.6
25.2
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
16.4
16.4
21.3
21.3
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
6
Rev. 1.6
Si8660/61/62/63
Table 2. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Maximum Data Rate
0
—
150
Mbps
Minimum Pulse Width
—
—
5.0
ns
Timing Characteristics
Si866xBx, Ex
Propagation Delay
Pulse Width Distortion
|tPLH - tPHL|
Propagation Delay
Skew2
Channel-Channel Skew
tPHL, tPLH
See Figure 1
5.0
8.0
13
ns
PWD
See Figure 1
—
0.2
4.5
ns
tPSK(P-P)
—
2.0
4.5
ns
tPSK
—
0.4
2.5
ns
2.5
4.0
2.5
4.0
All Models
Output Rise Time
tr
CL = 15 pF
(See Figure 1)
—
Output Fall Time
tf
CL = 15 pF
(See Figure 1)
—
Peak Eye Diagram Jitter
tJIT(PK)
See Figure 7
—
350
—
ps
Common Mode
Transient Immunity
CMTI
VI = VDD or 0 V
VCM = 1500 V
(See Figure 2)
35
50
—
kV/µs
—
15
40
µs
Startup Time3
tSU
ns
ns
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
1.4 V
Typical
Input
tPLH
tPHL
90%
90%
10%
10%
1.4 V
Typical
Output
tr
tf
Figure 1. Propagation Delay Timing
Rev. 1.6
7
Si8660/61/62/63
3 to 5 V
Supply
Si86xx
Input Signal
Switch
3 to 5 V
Isolated Supply
VDD1
VDD2
INPUT
OUTPUT
Oscilloscope
GND1
GND2
Isolated Ground
Input
High Voltage
Differential
Probe
Output
Vcm Surge
Output
High Voltage
Surge Generator
Figure 2. Common Mode Transient Immunity Test Circuit
8
Rev. 1.6
Si8660/61/62/63
Table 3. Electrical Characteristics
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage Threshold
VDDUV+
VDD1, VDD2 rising
1.95
2.24
2.375
V
VDD Undervoltage Threshold
VDDUV–
VDD1, VDD2 falling
1.88
2.16
2.325
V
VDD Undervoltage
Hysteresis
VDDHYS
50
70
95
mV
Positive-Going Input Threshold
VT+
All inputs rising
1.4
1.67
1.9
V
Negative-Going Input Threshold
VT–
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
VHYS
0.38
0.44
0.50
V
High Level Input Voltage
VIH
2.0
—
—
V
Low Level Input Voltage
VIL
—
—
0.8
V
High Level Output Voltage
VOH
loh = –4 mA
VDD1,VDD2 – 0.4
3.1
—
V
Low Level Output Voltage
VOL
lol = 4 mA
—
0.2
0.4
V
IL
—
—
±10
µA
ZO
—
50
—

Input Leakage Current
1
Output Impedance
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
9
Si8660/61/62/63
Table 3. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Supply Current (All inputs 0 V or at supply)
Si8660Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
Si8661Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
Si8662Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
Si8663Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
mA
mA
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
10
Rev. 1.6
Si8660/61/62/63
Table 3. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.2
7.0
5.9
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
4.9
4.6
6.9
6.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.1
4.7
7.1
6.6
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
4.9
4.9
6.8
6.8
mA
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
5.0
7.0
7.0
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
5.0
5.3
7.0
7.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.3
5.2
7.4
7.3
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
5.2
5.2
7.3
7.3
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
11
Si8660/61/62/63
Table 3. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
18.3
7.0
23.8
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
7.4
16.4
9.9
21.3
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
10
14.1
13
18.3
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
12.3
12.3
15.9
15.9
mA
Maximum Data Rate
0
—
150
Mbps
Minimum Pulse Width
—
—
5.0
ns
Timing Characteristics
Si866xBx, Ex
Propagation Delay
Pulse Width Distortion
|tPLH - tPHL|
Propagation Delay Skew2
Channel-Channel Skew
tPHL, tPLH
See Figure 1
5.0
8.0
13
ns
PWD
See Figure 1
—
0.2
4.5
ns
tPSK(P-P)
—
2.0
4.5
ns
tPSK
—
0.4
2.5
ns
2.5
4.0
2.5
4.0
All Models
Output Rise Time
tr
CL = 15 pF
See Figure 1
—
Output Fall Time
tf
CL = 15 pF
See Figure 1
—
Peak Eye Diagram Jitter
tJIT(PK)
See Figure 7
—
350
—
ps
Common Mode Transient
Immunity
CMTI
VI = VDD or 0 V
VCM = 1500 V (see
Figure 2)
35
50
—
kV/µs
—
15
40
µs
Startup Time3
tSU
ns
ns
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
12
Rev. 1.6
Si8660/61/62/63
Table 4. Electrical Characteristics
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage
Threshold
VDDUV+
VDD1, VDD2 rising
1.95
2.24
2.375
V
VDD Undervoltage
Threshold
VDDUV–
VDD1, VDD2 falling
1.88
2.16
2.325
V
VDD Undervoltage
Hysteresis
VDDHYS
50
70
95
mV
Positive-Going Input
Threshold
VT+
All inputs rising
1.4
1.67
1.9
V
Negative-Going Input
Threshold
VT–
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
VHYS
0.38
0.44
0.50
V
High Level Input Voltage
VIH
2.0
—
—
V
Low Level Input Voltage
VIL
—
—
0.8
V
High Level Output Voltage
VOH
loh = –4 mA
VDD1,VDD2 – 0.4
2.3
—
V
Low Level Output Voltage
VOL
lol = 4 mA
—
0.2
0.4
V
IL
—
—
±10
µA
ZO
—
50
—

Input Leakage Current
1
Output Impedance
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
13
Si8660/61/62/63
Table 4. Electrical Characteristics (Continued)
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Supply Current (All inputs 0 V or at supply)
Si8660Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
Si8661Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
Si8662Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
Si8663Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
mA
mA
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
14
Rev. 1.6
Si8660/61/62/63
Table 4. Electrical Characteristics (Continued)
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.2
7.0
5.9
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
4.9
4.6
6.9
6.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.1
4.7
7.1
6.6
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
4.9
4.9
6.8
6.8
mA
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.6
7.0
6.4
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
5.0
4.9
6.9
6.9
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.2
4.9
7.2
6.9
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
5.0
5.0
7.0
7.0
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
15
Si8660/61/62/63
Table 4. Electrical Characteristics (Continued)
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
14.7
7.0
19.1
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
6.7
13.4
9.1
17.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
8.7
11.7
11.3
15.2
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
10.3
10.3
13.4
13.4
mA
Maximum Data Rate
0
—
150
Mbps
Minimum Pulse Width
—
—
5.0
ns
Timing Characteristics
Si866xBx, Ex
Propagation Delay
Pulse Width Distortion
|tPLH - tPHL|
Propagation Delay Skew2
Channel-Channel Skew
tPHL, tPLH
See Figure 1
5.0
8.0
14
ns
PWD
See Figure 1
—
0.2
5.0
ns
tPSK(P-P)
—
2.0
5.0
ns
tPSK
—
0.4
2.5
ns
2.5
4.0
2.5
4.0
All Models
Output Rise Time
tr
CL = 15 pF
See Figure 1
—
Output Fall Time
tf
CL = 15 pF
See Figure 1
—
Peak Eye Diagram Jitter
tJIT(PK)
See Figure 7
—
350
—
ps
Common Mode
Transient Immunity
CMTI
VI = VDD or 0 V\
VCM = 1500 V (see
Figure 2)
35
50
—
kV/µs
—
15
40
µs
Startup Time3
tSU
ns
ns
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
16
Rev. 1.6
Si8660/61/62/63
Table 5. Regulatory Information*
CSA
The Si866x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage.
60950-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
60601-1: Up to 125 VRMS reinforced insulation working voltage; up to 380 VRMS basic insulation working voltage.
VDE
The Si866x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1200 Vpeak for basic insulation working voltage.
60950-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
UL
The Si866x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 VRMS isolation voltage for basic protection.
CQC
The Si866x is certified under GB4943.1-2011. For more details, see certificates CQC13001096110 and
CQC13001096239.
Rated up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
*Note: Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec.
Regulatory Certifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec.
Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec.
For more information, see "5. Ordering Guide" on page 30.
Rev. 1.6
17
Si8660/61/62/63
Table 6. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance)1
Nominal External Tracking
(Creepage)1
Minimum Internal Gap
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
Resistance (Input-Output)2
Capacitance (Input-Output)2
Input Capacitance3
Symbol
Test
Condition
L(IO1)
L(IO2)
PTI
ED
RIO
CIO
CI
IEC60112
f = 1 MHz
Value
Unit
WB
SOIC-16
8.0
8.0
NB
SOIC-16
4.9
4.01
0.014
0.014
600
600
VRMS
0.019
1012
2.0
4.0
0.019
1012
2.0
4.0
mm

pF
pF
mm
mm
mm
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component-level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC-16 package and 7.6 mm minimum for the WB SOIC-16
package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
18
Rev. 1.6
Si8660/61/62/63
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Specification
Test Conditions
Basic Isolation Group
NB SOIC-16
WB SOIC-16
I
I
Rated Mains Voltages < 150 VRMS
I-IV
I-IV
Rated Mains Voltages < 300 VRMS
I-III
I-IV
Rated Mains Voltages < 400 VRMS
I-II
I-III
Rated Mains Voltages < 600 VRMS
I-II
I-III
Material Group
Installation Classification
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Parameter
Symbol
Maximum Working Insulation
Voltage
Test Condition
WB
SOIC-16
NB SOIC-16
1200
630
VPR
Method b1
(VIORM x 1.875 = VPR, 100%
Production Test, tm = 1 sec,
Partial Discharge < 5 pC)
2250
1182
VIOTM
t = 60 sec
6000
6000
2
2
>109
>109
VIORM
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at TS,
VIO = 500 V
RS
Unit
Vpeak
Vpeak

*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values1
Parameter
Symbol
Case Temperature
TS
Safety Input, Output, or
Supply Current
IS
Device Power
Dissipation2
PD
Test Condition
JA = 105 °C/W
(NB SOIC-16),
VI = 5.5 V, TJ = 150 °C,
TA = 25 °C
Max
WB SOIC-16
NB SOIC-16
150
150
Unit
°C
mA
220
215
415
415
mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
Rev. 1.6
19
Si8660/61/62/63
Table 10. Thermal Characteristics
Parameter
Symbol
WB SOIC-16
NB SOIC-16
Unit
JA
100
105
°C/W
IC Junction-to-Air Thermal Resistance
Safety-Limiting Current (mA)
500
450
VDD1, VDD2 = 2.70 V
400
370
VDD1, VDD2 = 3.6 V
300
220
200
VDD1, VDD2 = 5.5 V
100
0
0
50
100
Temperature (ºC)
150
200
Figure 3. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Safety-Limiting Current (mA)
500
430
VDD1, VDD2 = 2.70 V
400
360
VDD1, VDD2 = 3.6 V
300
215
200
VDD1, VDD2 = 5.5 V
100
0
0
50
100
Temperature (ºC)
150
200
Figure 4. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
20
Rev. 1.6
Si8660/61/62/63
Table 11. Absolute Maximum Ratings1
Parameter
Symbol
Min
Max
Unit
TSTG
–65
150
°C
Ambient Temperature Under Bias
TA
–40
125
°C
Junction Temperature
TJ
—
150
°C
VDD1, VDD2
–0.5
7.0
V
Input Voltage
VI
–0.5
VDD + 0.5
V
Output Voltage
VO
–0.5
VDD + 0.5
V
Output Current Drive Channel
IO
—
10
mA
Lead Solder Temperature (10 s)
—
260
°C
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-16
—
4500
VRMS
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
—
6500
VRMS
Storage Temperature2
Supply Voltage
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
Rev. 1.6
21
Si8660/61/62/63
2. Functional Description
2.1. Theory of Operation
The operation of an Si866x channel is analogous to that of an opto coupler, except an RF carrier is modulated
instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si866x channel is shown in
Figure 5.
Transmitter
Receiver
RF
OSCILLATOR
A
MODULATOR
SemiconductorBased Isolation
Barrier
DEMODULATOR
B
Figure 5. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 6 for more details.
Input Signal
Modulation Signal
Output Signal
Figure 6. Modulation Scheme
22
Rev. 1.6
Si8660/61/62/63
2.2. Eye Diagram
Figure 7 illustrates an eye-diagram taken on an Si8660. For the data source, the test used an Anritsu (MP1763C)
Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8660 were
captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of
150 Mbps. The results also show that 2 ns pulse width distortion and 350 ps peak jitter were exhibited.
Figure 7. Eye Diagram
Rev. 1.6
23
Si8660/61/62/63
3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Figure 8, where UVLO+ and UVLOare the positive-going and negative-going thresholds respectively. Refer to Table 12 to determine outputs when
power supply (VDD) is not present.
Table 12. Si866x Logic Operation
VI
Input1,2
VDDI
State1,3,4
VDDO
State1,3,4
VO Output1,2
H
P
P
H
L
P
P
L
X5
UP
P
L6
H6
Upon transition of VDDI from unpowered to powered, VO
returns to the same state as VI in less than 1 µs.
X5
P
UP
Undetermined
Upon transition of VDDO from unpowered to powered, VO
returns to the same state as VI within 1 µs.
Comments
Normal operation.
Notes:
1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and output terminals.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
3. “Powered” state (P) is defined as 2.5 V < VDD < 5.5 V.
4. “Unpowered” state (UP) is defined as VDD = 0 V.
5. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
6. See "5. Ordering Guide" on page 30 for details. This is the selectable fail-safe operating mode (ordering option). Some
devices have default output state = H, and some have default output state = L, depending on the ordering part number
(OPN). For default high devices, the data channels have pull-ups on inputs/outputs. For default low devices, the data
channels have pull-downs on inputs/outputs.
24
Rev. 1.6
Si8660/61/62/63
3.1. Device Startup
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following
this, the outputs follow the states of inputs.
3.2. Undervoltage Lockout
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or
when VDD is below its specified operating circuits range. Both Side A and Side B each have their own
undervoltage lockout monitors. Each side can enter or exit UVLO independently. For example, Side A
unconditionally enters UVLO when VDD1 falls below VDD1(UVLO–) and exits UVLO when VDD1 rises above
VDD1(UVLO+). Side B operates the same as Side A with respect to its VDD2 supply.
UVLO+
UVLO-
VDD1
UVLO+
UVLO-
VDD2
INPUT
tSTART
tSD
tSTART
tSTART
tPHL
tPLH
OUTPUT
Figure 8. Device Behavior during Normal Operation
Rev. 1.6
25
Si8660/61/62/63
3.3. Layout Recommendations
To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 VAC) must be physically
separated from the safety extra-low voltage circuits (SELV is a circuit with <30 VAC) by a certain distance
(creepage/clearance). If a component, such as a digital isolator, straddles this isolation barrier, it must meet those
creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating
(commonly referred to as working voltage protection). Table 5 on page 17 and Table 6 on page 18 detail the
working voltage and creepage/clearance capabilities of the Si86xx. These tables also detail the component
standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for
end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, 60601-1, etc.)
requirements before starting any design that uses a digital isolator.
3.3.1. Supply Bypass
The Si866x family requires a 0.1 µF bypass capacitor between VDD1 and GND1 and VDD2 and GND2. The
capacitor should be placed as close as possible to the package. To enhance the robustness of a design, the user
may also include resistors (50–300  ) in series with the inputs and outputs if the system is excessively noisy.
3.3.2. Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination
of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3.4. Fail-Safe Operating Mode
Si86xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input
supply is unpowered) can either be a logic high or logic low when the output supply is powered. See Table 12 on
page 24 and "5. Ordering Guide" on page 30 for more information.
26
Rev. 1.6
Si8660/61/62/63
3.5. Typical Performance Characteristics
The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer
to Tables 2, 3, and 4 for actual specification limits.
30.0
40.0
35.0
25.0
15.0
Current (mA)
Current (mA)
30.0
20.0
5V
3.3V
10.0
2.5V
25.0
20.0
5V
15.0
3.3V
2.5V
10.0
5.0
5.0
0.0
0.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Data Rate (Mbps)
Data Rate (Mbps)
Figure 9. Si8660 Typical VDD1 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
Figure 12. Si8660 Typical VDD2 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
40.0
30.0
35.0
30.0
Current (mA)
Current (mA)
25.0
20.0
15.0
5V
3.3V
10.0
25.0
20.0
5V
15.0
3.3V
2.5V
10.0
2.5V
5.0
5.0
0.0
0
0.0
0
10
20
30
40
50
60
70
80
10
20
30
40
50
90 100 110 120 130 140 150
60
70
80
90 100 110 120 130 140 150
Data Rate (Mbps)
Data Rate (Mbps)
Figure 10. Si8661 Typical VDD1 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 13. Si8661 Typical VDD2 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
30.0
30.0
25.0
Current (mA)
Current (mA)
25.0
20.0
15.0
5V
3.3V
10.0
2.5V
20.0
15.0
5V
3.3V
10.0
2.5V
5.0
5.0
0.0
0.0
0
10
20
30
40
50
60
70
80
0
90 100 110 120 130 140 150
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Data Rate (Mbps)
Data Rate (Mbps)
Figure 11. Si8662 Typical VDD1 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 14. Si8662 Typical VDD2 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
Rev. 1.6
27
Si8660/61/62/63
30.0
Current (mA)
25.0
20.0
15.0
5V
3.3V
10.0
2.5V
5.0
0.0
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Data Rate (Mbps)
Figure 15. Si8663 Typical VDD1 or VDD2 Supply
Current vs. Data Rate 5, 3.3, and 2.5 V
Operation (15 pF Load)
10.0
Delay (ns)
9.0
8.0
7.0
6.0
5.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100110120
Temperature (Degrees C)
Figure 16. Propagation Delay vs. Temperature
28
Rev. 1.6
Si8660/61/62/63
4. Pin Descriptions
VDD1
VDD1
VDD2
A1
RF
XMITR
A2
RF
XMITR
A3
RF
XMITR
A4
RF
XMITR
A5
RF
XMITR
A6
RF
XMITR
GND1
I
s
o
l
a
t
i
o
n
VDD2
RF
RCVR
B1
A1
RF
XMITR
RF
RCVR
B2
A2
RF
XMITR
RF
RCVR
B3
A3
RF
XMITR
RF
RCVR
B4
A4
RF
XMITR
RF
RCVR
B5
A5
RF
XMITR
RF
RCVR
B6
A6
RF
RCVR
Si8660
GND2
GND1
I
s
o
l
a
t
i
o
n
VDD1
B1
A1
RF
XMITR
RF
RCVR
B2
A2
RF
XMITR
RF
RCVR
B3
A3
RF
XMITR
RF
RCVR
B4
A4
RF
XMITR
RF
RCVR
B5
A5
RF
RCVR
RF
XMITR
B6
A6
RF
RCVR
GND2
Si8661
GND1
VDD1
VDD2
RF
RCVR
I
s
o
l
a
t
i
o
n
VDD2
RF
RCVR
B1
A1
RF
XMITR
RF
RCVR
B2
A2
RF
XMITR
RF
RCVR
B3
A3
RF
XMITR
RF
RCVR
B4
A4
RF
RCVR
RF
XMITR
B5
A5
RF
RCVR
RF
RF
XMITR
RCVR
B6
A6
RF
RCVR
Si8662
GND2
GND1
Name
SOIC-16 Pin#
Type
VDD1
1
Supply
A1
2
Digital Input
Side 1 digital input.
A2
3
Digital Input
Side 1 digital input.
A3
4
Digital Input
Side 1 digital input.
A4
5
Digital I/O
Side 1 digital input or output.
A5
6
Digital I/O
Side 1 digital input or output.
A6
7
Digital I/O
Side 1 digital input or output.
GND1
8
Ground
Side 1 ground.
GND2
9
Ground
Side 2 ground.
B6
10
Digital I/O
Side 2 digital input or output.
B5
11
Digital I/O
Side 2 digital input or output.
B4
12
Digital I/O
Side 2 digital input or output.
B3
13
Digital Output
Side 2 digital output.
B2
14
Digital Output
Side 2 digital output.
B1
15
Digital Output
Side 2 digital output.
VDD2
16
Supply
Side 2 power supply.
I
s
o
l
a
t
i
o
n
RF
RCVR
B1
RF
RCVR
B2
RF
RCVR
B3
RF
XMITR
B4
RF
XMITR
B5
RF
RF
XMITR
RCVR
B6
Si8663
GND2
Description
Side 1 power supply.
Rev. 1.6
29
Si8660/61/62/63
5. Ordering Guide
Table 13. Ordering Guide for Valid OPNs1,2
Temp (°C)
Package
1.0
–40 to 125 °C
NB SOIC-16
Low
2.5
–40 to 125 °C
NB SOIC-16
150
Low
3.75
–40 to 125 °C
NB SOIC-16
0
150
High
3.75
–40 to 125 °C
NB SOIC-16
6
0
150
Low
5.0
–40 to 125 °C
WB SOIC-16
Si8660ED-B-IS
6
0
150
High
5.0
–40 to 125 °C
WB SOIC-16
Si8661BB-B-IS1
5
1
150
Low
2.5
–40 to 125 °C
NB SOIC-16
Si8661BC-B-IS1
5
1
150
Low
3.75
–40 to 125 °C
NB SOIC-16
Si8661EC-B-IS1
5
1
150
High
3.75
–40 to 125 °C
NB SOIC-16
Si8661BD-B-IS
5
1
150
Low
5.0
–40 to 125 °C
WB SOIC-16
Si8661ED-B-IS
5
1
150
High
5.0
–40 to 125 °C
WB SOIC-16
Si8662BB-B-IS1
4
2
150
Low
2.5
–40 to 125 °C
NB SOIC-16
Si8662BC-B-IS1
4
2
150
Low
3.75
–40 to 125 °C
NB SOIC-16
Si8662EC-B-IS1
4
2
150
High
3.75
–40 to 125 °C
NB SOIC-16
Si8662BD-B-IS
4
2
150
Low
5.0
–40 to 125 °C
WB SOIC-16
Si8662ED-B-IS
4
2
150
High
5.0
–40 to 125 °C
WB SOIC-16
Si8663BB-B-IS1
3
3
150
Low
2.5
–40 to 125 °C
NB SOIC-16
Si8663BC-B-IS1
3
3
150
Low
3.75
–40 to 125 °C
NB SOIC-16
Si8663EC-B-IS1
3
3
150
High
3.75
–40 to 125 °C
NB SOIC-16
Si8663BD-B-IS
3
3
150
Low
5.0
–40 to 125 °C
WB SOIC-16
Si8663ED-B-IS
3
3
150
High
5.0
–40 to 125 °C
WB SOIC-16
Number of Max Data Default Isolation
Output rating
Rate
Inputs
(kV)
State
VDD2 Side (Mbps)
Ordering Part
Number (OPN)
Number of
Inputs
VDD1 Side
Si8660BA-B-IS1
6
0
150
Low
Si8660BB-B-IS1
6
0
150
Si8660BC-B-IS1
6
0
Si8660EC-B-IS1
6
Si8660BD-B-IS
Notes:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard
classifications and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
30
Rev. 1.6
Si8660/61/62/63
6. Package Outline: 16-Pin Wide Body SOIC
Figure 17 illustrates the package details for the Si866x Digital Isolator. Table 14 lists the values for the dimensions
shown in the illustration.
Figure 17. 16-Pin Wide Body SOIC
Rev. 1.6
31
Si8660/61/62/63
Table 14. Package Diagram Dimensions
Dimension
Min
Max
A
—
2.65
A1
0.10
0.30
A2
2.05
—
b
0.31
0.51
c
0.20
0.33
D
10.30 BSC
E
10.30 BSC
E1
7.50 BSC
e
1.27 BSC
L
0.40
1.27
h
0.25
0.75

0°
8°
aaa
—
0.10
bbb
—
0.33
ccc
—
0.10
ddd
—
0.25
eee
—
0.10
fff
—
0.20
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to JEDEC Outline MS-013, Variation AA.
4. Recommended reflow profile per JEDEC J-STD-020C specification for
small body, lead-free components.
32
Rev. 1.6
Si8660/61/62/63
7. Land Pattern: 16-Pin Wide-Body SOIC
Figure 18 illustrates the recommended land pattern details for the Si866x in a 16-pin wide-body SOIC. Table 15
lists the values for the dimensions shown in the illustration.
Figure 18. 16-Pin SOIC Land Pattern
Table 15. 16-Pin Wide Body SOIC Land Pattern Dimensions
Dimension
Feature
(mm)
C1
Pad Column Spacing
9.40
E
Pad Row Pitch
1.27
X1
Pad Width
0.60
Y1
Pad Length
1.90
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.
Rev. 1.6
33
Si8660/61/62/63
8. Package Outline: 16-Pin Narrow Body SOIC
Figure 19 illustrates the package details for the Si866x in a 16-pin narrow-body SOIC (SO-16). Table 16 lists the
values for the dimensions shown in the illustration.
Figure 19. 16-pin Small Outline Integrated Circuit (SOIC) Package
34
Rev. 1.6
Si8660/61/62/63
Table 16. Package Diagram Dimensions
Dimension
Min
Max
A
—
1.75
A1
0.10
0.25
A2
1.25
—
b
0.31
0.51
c
0.17
0.25
D
9.90 BSC
E
6.00 BSC
E1
3.90 BSC
e
1.27 BSC
L
0.40
L2
1.27
0.25 BSC
h
0.25
0.50
θ
0°
8°
aaa
0.10
bbb
0.20
ccc
0.10
ddd
0.25
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to the JEDEC Solid State Outline MS-012,
Variation AC.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020
specification for Small Body Components.
Rev. 1.6
35
Si8660/61/62/63
9. Land Pattern: 16-Pin Narrow Body SOIC
Figure 20 illustrates the recommended land pattern details for the Si866x in a 16-pin narrow-body SOIC. Table 17
lists the values for the dimensions shown in the illustration.
Figure 20. 16-Pin Narrow Body SOIC PCB Land Pattern
Table 17. 16-Pin Narrow Body SOIC Land Pattern Dimensions
Dimension
Feature
(mm)
C1
Pad Column Spacing
5.40
E
Pad Row Pitch
1.27
X1
Pad Width
0.60
Y1
Pad Length
1.55
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern
SOIC127P600X165-16N for Density Level B (Median Land
Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC)
and a card fabrication tolerance of 0.05 mm is assumed.
36
Rev. 1.6
Si8660/61/62/63
10. Top Markings
10.1. Si866x Top Marking (16-Pin Wide Body SOIC)
Si86XYSV
YYWWRTTTTT
TW
e4
10.2. Top Marking Explanation (16-Pin Wide Body SOIC)
Si86 = Isolator product series
XY = Channel Configuration
X = # of data channels (6, 5, 4, 3, 2, 1)
Y = # of reverse channels (3, 2, 1, 0)
(See Ordering Guide for more
information).
S = Speed Grade
A = 1 Mbps; B = 150 Mbps (default output = low);
E = 150 Mbps (default output = high)
V = Insulation rating
A = 1 kV; B = 2.5 kV; C = 3.75 kV; D = 5.0 kV
Line 1 Marking:
Base Part Number
Ordering Options
Line 2 Marking:
YY = Year
WW = Workweek
Assigned by assembly subcontractor. Corresponds to the
year and workweek of the mold date.
RTTTTT = Mfg Code
Manufacturing code from assembly house
“R” indicates revision
Circle = 1.7 mm Diameter
(Center-Justified)
“e4” Pb-Free Symbol
Country of Origin ISO Code
Abbreviation
TW = Taiwan
Line 3 Marking:
Rev. 1.6
37
Si8660/61/62/63
10.3. Si866x Top Marking (16-Pin Narrow Body SOIC)
e3
Si86XYSV
YYWWRTTTTT
10.4. Top Marking Explanation (16-Pin Narrow Body SOIC)
Line 1 Marking:
Base Part Number
Ordering Options
(See Ordering Guide for more
information).
Line 2 Marking:
38
Si86 = Isolator product series
XY = Channel Configuration
X = # of data channels (6, 5, 4, 3, 2, 1)
Y = # of reverse channels (3, 2, 1, 0)
S = Speed Grade
A = 1 Mbps; B = 150 Mbps (default
output = low);
E = 150 Mbps (default output = high)
V = Insulation rating
A = 1 kV; B = 2.5 kV; C = 3.75 kV
Circle = 1.2 mm Diameter
“e3” Pb-Free Symbol
YY = Year
WW = Work Week
Assigned by the Assembly House. Corresponds to the
year and work week of the mold date.
RTTTTT = Mfg Code
Manufacturing code from assembly house
“R” indicates revision
Circle = 1.2 mm diameter
“e3” Pb-Free Symbol.
Rev. 1.6
Si8660/61/62/63
DOCUMENT CHANGE LIST
Revision 1.4 to Revision 1.5












Added Figure 2, “Common Mode Transient Immunity
Test Circuit,” on page 8.
 Added references to CQC throughout.
 Added references to 2.5 kVRMS devices throughout.

Revision 0.1 to Revision 1.0
Added chip graphics on page 1.
Updated " Features" on page 1.
Moved Tables 1 and 11 to page 21.
Updated Tables 2, 3, and 4.
Updated Table 6, “Insulation and Safety-Related
Specifications,” on page 18.
Updated Table 8, “IEC 60747-5-2 Insulation
Characteristics for Si86xxxx*,” on page 19.
Moved Table 12 to page 24.
Moved “Typical Performance Characteristics” to
page 27.
Updated "3.5. Typical Performance Characteristics"
on page 27.
Updated Table 4, “Pin Descriptions,” on page 29.
Updated "5. Ordering Guide" on page 30.
Removed references to QSOP-16 package.


Updated "5. Ordering Guide" on page 30.
Updated "10.1. Si866x Top Marking (16-Pin Wide
Body SOIC)" on page 37.
Revision 1.5 to Revision 1.6

Updated Table 5 on page 17.
Added

CQC certificate numbers.
Updated "5. Ordering Guide" on page 30.
Removed
Removed
references to moisture sensitivity levels.
note 2.
Revision 1.0 to Revision 1.1
Reordered spec tables to conform to new
convention.
 Removed “pending” throughout document.

Revision 1.1 to Revision 1.2
Updated High Level Output Voltage VOH to 3.1 V in
Table 3, “Electrical Characteristics,” on page 9.
 Updated High Level Output Voltage VOH to 2.3 V in
Table 4, “Electrical Characteristics,” on page 13.

Revision 1.2 to Revision 1.3

Updated "5. Ordering Guide" on page 30 to include
MSL2A.
Revision 1.3 to Revision 1.4

Updated Table 11 on page 21.
Added
junction temperature spec.
Updated "3.3.1. Supply Bypass" on page 26.
 Removed “3.3.2. Pin Connections” on page 22.
 Updated "5. Ordering Guide" on page 30.

Removed
Rev A devices.
Updated "6. Package Outline: 16-Pin Wide Body
SOIC" on page 31.
 Updated Top Marks.

Added
revision description.
Rev. 1.6
39
Si8660/61/62/63
CONTACT INFORMATION
Silicon Laboratories Inc.
400 West Cesar Chavez
Austin, TX 78701
Tel: 1+(512) 416-8500
Fax: 1+(512) 416-9669
Toll Free: 1+(877) 444-3032
Please visit the Silicon Labs Technical Support web page:
https://www.silabs.com/support/pages/contacttechnicalsupport.aspx
and register to submit a technical support request.
Patent Notice
Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size, analogintensive mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class engineering team.
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
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40
Rev. 1.6