Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TCR 3000 QS8K13 (8) Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Drain current Source current (Body Diode) Continuous ID Pulsed Continuous IDP Is *1 Pulsed Isp *1 PD *2 Power dissipation Channel temperature Range of storage temperature Tch Tstg 6 A 18 1 A A 18 A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (7) (6) (5) ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 1.5 W / TOTAL 1.25 W / ELEMENT 150 C 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A Data Sheet QS8K13 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit IGSS 10 A Drainsource breakdown voltage V (BR)DSS 30 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA Static drainsource onstate resistance RDS (on)* 20 28 ID=6A, VGS=10V 25 35 m ID=6A, VGS=4.5V 28 39 l Yfs l* 3.0 S ID=6A, VDS=10V Input capacitance Ciss 390 pF VDS=10V Output capacitance Coss 150 pF VGS=0V Reverse transfer capacitance Crss 70 pF f=1MHz Turnon delay time td(on) * 8 ns ID=3A, VDD 15V tr * 40 ns VGS=10V td(off) * 35 ns RL=5 Parameter Gatesource leakage Forward transfer admittance Rise time Turnoff delay time Conditions VGS=20V, VDS=0V ID=6A, VGS=4.0V tf * 7 ns RG=10 Total gate charge Qg * 5.5 nC ID=6A, VDD 15V Gatesource charge Gatedrain charge Qgs * Qgd * 1.5 2.1 nC nC VGS=5V Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. 1.2 Unit V Conditions Is=6A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A Data Sheet QS8K13 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 6 6 Ta=25℃ Pulsed VGS=10.0V 5 VGS=4.5V VGS=2.5V VGS=4.5V VGS=4.0V 4 Drain Current : ID [A] Drain Current : ID [A] Ta=25℃ Pulsed VGS=10.0V 5 VGS=3.0V VGS=2.8V 3 2 1 VGS=4.0V 4 VGS=2.8V 3 VGS=2.5V 2 VGS=2.0V 1 VGS=2.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 Ta=25℃ Pulsed VGS=10V pulsed 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 10 1 0.01 100 0.1 1 10 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4.5V pulsed VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 Drain Current : ID [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 0.1 1 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 10 1 0.01 10 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 1 10 Drain Current : ID [A] 3/6 2011.05 - Rev.A Data Sheet QS8K13 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 10 10 VDS=10V pulsed 1 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 Drain Current : ID [A] 2.5 3.0 3.5 100 10 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Source Current : Is [A] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 Ta=25℃ Pulsed 80 ID=3.0A ID=6.0A 60 40 20 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 10 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C VDD=15V ID=6A Pulsed 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] 100 td(off) 10 6 4 2 td(on) tr 1 0 0.01 0.1 1 10 0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 Total Gate Charge : Qg [nC] 4/6 2011.05 - Rev.A Data Sheet QS8K13 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Ta=25°C f=1MHz VGS=0V Operation in this area is limited by RDS(on) (VGS = 10V) Drain Current : ID [ A ] Capacitance : C [pF] 10 1000 Ciss 100 Coss PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Crss 10 DC Operation 0.01 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. （30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A Data Sheet QS8K13 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A