-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB523YE / DTB523YM Dimensions (Unit : mm) Applications Inverter, Interface, Driver DTB523YE 0.7 1.6 0.55 0.3 Feature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> 0.1Min. (1) 0.2 1.0 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : X53 1.2 0.32 Structure PNP epitaxial plannar silicon transistor (Resistor built-in type) 0.2 DTB523YM 0.8 1.2 (3) (1)(2) 0.4 0.4 0.2 0.22 0.13 0.5 0.8 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Packaging specifications Abbreviated symbol : X52 Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Code Part No. Basic ordering unit (pieces) − DTB523YE − DTB523YM Absolute maximum ratings (Ta=25C) Symbol Parameter Inner circuit Limits DTB523YE DTB523YM Unit VCC −12 V Input voltage VIN −12 to +5 V −500 mA Collector current ∗1 IC (max) Power dissipation ∗2 PD 150 mW Tj 150 C Junction temperature Storage temperature Tstg −55 to +150 C ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ OUT R1 Supply voltage IN R2 GND(+) OUT IN GND(+) R1=2.2kΩ / R2=10kΩ 1/2 2010.01- Rev.C DTB523YE / DTB523YM Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −2.5 − − VO(on) − −60 −300 mV IO/II= −100mA / −5mA II − − −3.0 mA VI= −5V IO(off) − − −0.5 μA VCC= −12V, VI=0V DC current gain GI 140 − − − Transition frequency ∗ fT − 260 − MHz Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 3.6 4.5 5.5 − − Input voltage Output voltage Input current Output current Unit Conditions VCC= −5V, IO= −100μA V VO= −0.3V, IO= −20mA VO= −2V, IO= −100mA VCE= −10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor. Electrical characteristics curves Ta= －40℃ 10 25℃ 85℃ 125℃ 1 0.1 0.01 100 V0 = -0.3V OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) 100 VCC = -5V 10 Ta=125℃ 85℃ 25℃ 1 －40℃ 0.1 0.1 1 10 100 0 1000 0.2 DC CURENT GAIN : G I Ta=125℃ 85℃ 25℃ 100 －40℃ 10 1 0.1 0.6 0.8 1 1 VO= -2V OUTPUT VOLTAGE : VO(on) (V) 1000 0.4 1.2 1.4 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (mA) IC /II=20 Ta=125℃ 85℃ 25℃ －40℃ 0.1 0.01 1 10 100 OUTPUT CURENT : IO (mA) 1000 www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1 10 100 1000 OUOPUT CURRENT : IO (mA) 2/2 2010.01- Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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