ROHM QSX4

QSX4
Transistors
Low frequency amplifier
QSX4
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
2.8
0.85
Each lead has same dimensions
ROHM : TSMT6
QSX4
Abbreviated symbol : X04
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperautre
2.9
(4) (5) (6)
0.16
zFeatures
1) A collector current is large.
2) VCE(sat) : max. 370mV
At lc=1.5A / lB=75mA
(3) (2)
0.4
(1)
1.6
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
2
4
0.5
1.25
150
−55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
QSX4
(6)
(5)
(4)
(1)
(2)
(3)
∗1
∗2
∗3
∗1 Single pluse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended Land Pattern
∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltae
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
180
−
280
20
Max.
−
−
−
100
100
370
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=6V
IC=1.5A, IB=75mA
VCE=2V, IC=200mA ∗
VCE=2V, IE=−200mA, f=100MHz ∗
VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A
1/2
QSX4
Transistors
zPackaging specifications
Package
Type
Taping
Code
TR
Basic ordering unit (Pieces)
3000
QSX4
DC CURRENT GAIN : hFE
Ta=25 C
Ta=−25 C
100
10
0.001
0.01
0.1
1
10
10
Ta=−25 C
Ta=25 C
Ta=125 C
0.1
0.01
0.001
0.1
1
10
1000
TRANSITION FREQUENCY : fT (MHz)
VCE=−2V
Pulsed
Ta=125 C
1
Ta=25 C
Ta=−25 C
0.1
0.01
0.4
0.6
0.8
1
1.2
IC/IB=20/1
Pulsed
Ta=−25 C
Ta=25 C
Ta=125 C
1
0.1
0.001
1.4
Ta=25 C
VCE=−2V
f= 100MHz
100
10
0.01
0.1
1
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
Fig.4 Grounded emitter propagation
characteristics
Fig.5 Gain bandwidth product
vs. emitter current
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
10
COLLECTOR CURRENT : IC (A)
0.01
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
0.2
IC/IB=20/1
Pulsed
1
COLLECTOR CURRENT : IC (A)
0.001
0
BASE SATURATION VOLTAGE : VBE(sat) (V)
VCE=−2V
Pulsed
Ta=125 C
10
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
Fig.3 Base-emitter saturation voltage
vs. collector current
1000
IC=0A
f=1MHz
Ta=25 C
Cob
100
Cib
10
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1