ROHM SH8K1

4V Drive Nch+Nch MOSFET
SH8K1
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
SH8K1
∗2
∗2
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
(1) (2) (3) (4)
∗1
∗1
Limits
30
±20
±5.0
±20
1.6
6.4
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Limits
62.5
Unit
°C / W
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw 10μs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)
∗
∗MOUNTED ON A CERAMIC BOARD.
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1/3
2009.12 - Rev.A
SH8K1
Data Sheet
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
1.0
−
−
−
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
36
52
58
−
230
80
50
6
8
22
5
3.9
1.1
1.4
±10
−
1
2.5
51
73
82
−
−
−
−
−
−
−
−
5.5
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=5.0A, VGS=10V
ID=5.0A, VGS=4.5V
ID=5.0A, VGS=4V
ID=5.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=2.5A, VDD 15V
VGS=10V
RL=6Ω
RG =10Ω
VDD 15V
VGS=5V
ID=5.0A
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
∗Pulsed
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2/3
2009.12 - Rev.A
SH8K1
Data Sheet
Electrical characteristic curves
10000
Ciss
100
Coss
Crss
10
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
1000
tf
100
td (off)
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
tr
10
td (on)
1
10
100
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
1
100
10
1
0.1
1
10
2
1
0
1
2
3
4
5
250
ID=5A
ID=2.5A
150
100
50
0
0
2
4
6
8
10
12
14
1
0.01
0.0
16
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
1
0.1
VGS=0V
Pulsed
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
1
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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3/3
8
0.1
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
7
Fig.3 Dynamic Input Characteristics
10
200
6
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=10V
Pulsed
3
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
4
0
10
300
GATE-SOURCE VOLTAGE : VGS (V)
1000
5
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
VDS=10V
Pulsed
6
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
10
1
SOURCE CURRENT : Is (A)
0.1
1
0.01
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
10
0.01
Ta=25°C
9 VDD=15V
ID=5A
8
RG=10Ω
7 Pulsed
10
2009.12 - Rev.A
Notice
Notes
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