Data Sheet 10V Drive Nch MOSFET RCD075N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 2.5 0.75 9.5 1.5 (SC-63) <SOT-428> (1) (2) (3) 0.8Min. 0.65 0.9 2.3 2.3 0.5 1.0 Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RCD075N20 Type Inner circuit Taping TL 2500 Absolute maximum ratings (Ta = 25C) Symbol Parameter ∗1 (1) Gate (2) Drain (3) Source Limits Unit Drain-source voltage VDSS Gate-source voltage VGSS 200 30 V V Continuous Pulsed Continuous ID IDP IS *3 7.5 30 7.5 A A A Pulsed ISP *1 Drain current Source current (Body Diode) *1 *3 Power dissipation IAS *2 EAS *2 PD *4 Channel temperature Range of storage temperature Tch Tstg Avalanche current Avalanche energy 30 A 3.75 4.13 A mJ 20 W 150 55 to 150 C C Limits 6.25 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A Data Sheet RCD075N20 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 10 A VDS=200V, VGS=0V VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA RDS (on)* - 250 325 l Yfs l * 1.5 3.0 - S VDS=10V, ID=3.75A Input capacitance Ciss - 755 - pF VDS=25V Output capacitance Coss - 55 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * tr * - 20 - ns VDD 100V, ID=3.75A - 22 - ns VGS=10V td(off) * tf * - 24 - ns RL=26.67 - 12 - ns RG=10 Qg * Qgs * Qgd * - 15 - nC VDD 100V, ID=7.5A - 6 6 - nC nC VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=3.75A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=7.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet RCD075N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 3 8 Ta=25°C pulsed VGS=10.0V VGS=10.0V VGS=7.0V 6 2 Drain Current : ID [A] Drain Current : ID [A] Ta=25°C pulsed VGS=8.0V VGS=8.0V 2.5 1.5 VGS=6.5V 1 VGS=6.0V 4 VGS=7.0V 2 VGS=6.5V 0.5 VGS=6.0V VGS=5.5V VGS=5.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V pulsed VDS=10V ID=1mA pulsed 8 Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Currnt : ID [A] 6 10 10 0.1 0.01 6 4 2 0 0.001 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 10000 VGS=10V pulsed VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance : RDS(on) [mΩ] Static Drain-Source On-State Resistance : RDS(on) [mΩ] 4 Drain-Source Voltage : VDS [V] 1000 100 10 800 600 ID=7.5A 400 ID=3.75A 200 0 0.1 1 10 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/5 2011.10 - Rev.A Data Sheet RCD075N20 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 10 10 VGS=0V pulsed 1 Source Current : IS [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 1 10 0.0 0.5 1.5 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 10000 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C pulsed 800 1000 Switching Time : t [ns] ID=7.5A ID=3.75A 600 400 tf td(off) 100 td(on) 10 tr 200 1 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 Gate-Source Voltage : VGS [V] 1 10 Drain Current : ID [A] Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 10000 20 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=100V ID=7.5A Pulsed 1000 15 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.0 Drain Current : ID [A] 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 10 Ciss 100 Coss 10 5 Crss 1 0 0 5 10 15 20 25 0.01 30 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/5 2011.10 - Rev.A Data Sheet RCD075N20 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A