QSZ1 Transistors General purpose transistor QSZ1 A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ1 zStructure Silicon epitaxial planar transistor ROHM : TSMT5 (5) 0.95 0.95 1.9 2.9 0.85 0∼0.1 0.3∼0.6 0.7 0.16 (3) (4) (2) zFeatures 1) Low VCE(sat) 2) Small package (1) 0.4 2.8 1.6 Each lead has same dimensions Abbreviated symbol : Z01 zEquivalent circuit (5) (4) Tr1 Tr2 (1) (2) (3) zPackaging specifications Type QSZ1 Package TSMT5 Marking Z01 Code TR Basic ordering unit(pieces) 3000 1/4 QSZ1 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Collector power dissipation Limits −15 −12 −6 −2 −4 500 1.25 0.9 150 −55 to +150 PC Junction temperature Storage temperature Tj Tstg Unit V V V A A ∗1 mW/Total ∗2 W/Total ∗3 W/Element ∗3 °C °C ∗1 Single pulse Pw=1ms. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate. Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Limits 15 12 6 2 4 500 1.25 0.9 150 −55 to +150 PC Power dissipation Unit V V V A A ∗1 mW/Total ∗2 W/Total ∗3 W/Element ∗3 °C °C + + Junction temperature Tj Range of storage temperature Tstg ∗1 Single pulse Pw=1ms. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 25mm 25mm t0.8mm ceramic substrate. zElectrical characteristics (Ta=25°C) Tr1 Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA Collector-emitter breakdown viltage BVCEO −12 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −10µA Collector cutoff current ICBO − − −100 nA VCB= −15V Emitter cutoff current IEBO − − −100 nA VEB= −6V VCE(sat) − −120 −180 mV IC= −1mA, IB= −50mA hFE 270 − 680 − VCE= −2V, IC= −200mA fT − 360 − MHz Cob − 15 − pF Parameter Collerctor-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Pulsed Conditions ∗ VCE= −2V, IE=200mA, f=100MHz ∗ VCB= −10V, IE=0mA, f=1MHz Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 − − − 270 − − Typ. − − − − − 90 − 360 20 Max. − − − 100 100 180 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=1A, IB=50mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗ Pulsed 2/4 QSZ1 Transistors zElectrical characteristic curves 25°C −40°C 100 0.001 0.01 0.1 1 10 IC/IB=20 PULSED 1 0.1 −40°C 25°C Ta=100°C Ta=100°C 25°C −40°C 0.01 0.001 0.001 TRANSITION FREQUENCY : fT : (MHz) COLLECTOR CURRENT IC : (A) 1 Ta=100°C 25°C −40°C 0.1 0.01 0.001 1 BASE TO EMITTER VOLTAGE : VBE (V) Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob(pF) 10 IC/IB=10/1 0.01 0.001 0.001 0.1 1 1 10 1000 IC=20 IB1=-20IB2 Ta=25°C tstg f=100MHz 100 0.01 0.1 Fig.3 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE= −2V f=100MHz 10 0.001 0.01 COLLECTOR CURRENT : IC (A) 1000 VCE= −2V PULSED 0.5 1 IC/IB=50/1 IC/IB=20/1 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current Fig.1 DC current gain vs. collector current 0 0.1 Ta=25°C PULSED 0.1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10 0.01 1 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE 10 VCE= −2V PULSED Ta=100°C BASE SATURATION VOLTAGE : VBE(sat) : (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat): (V) Tr1 10 tr 100 tf tdon 10 1 0.001 0.01 0.1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time 1 1000 Ta=25°C IE=0mA f=1MHz cib 100 cob 10 0.1 1 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 QSZ1 Transistors 1 1000 Ta=25°C Ta= −40°C 100 10 0.001 0.01 0.1 1 10 IC/IB=20/1 VCE=2V Pulsed 0.1 Ta=100°C Ta= −40°C 0.01 0.001 0.001 0.1 1 10 Fig.9 Base-emitter saturation voltage vs. collector current Fig.8 DC current gain vs. collector current Ta=25°C Pulsed 0.1 IC/IB=50/1 0.01 TRANSITION FREQUENCY : fT (MHz) VCE=2V Pulsed 1 Ta=100°C Ta=25°C 0.1 Ta=−40°C 0.01 0 0.5 1 1.5 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.10 Collector-emitter saturation voltage vs. collector current 1000 Ta=25°C Ta=25°C VCE=2V f=100MHz VCE=5V f=100MHz 100 10 0.001 IC/IB=20/1 IC/IB=10/1 1000 10 COLLECTOR CURRENT : IC (A) 0.01 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 0.001 Ta=25°C 1 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Pulsed Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Tr2 0.01 0.1 1 10 tstg 100 10 tdon tf 1 0.01 tr 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.11 Grounded emitter propagation characteristics Fig.12 Gain bandwidth product vs. emitter current Fig.13 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE TO EMITTER CURRENT : VBE (V) 10 1000 Ta=25˚C IC=0A f=1MHz Cib 100 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.14 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1