ROHM RB481Y-40

Data Sheet
Schottky Barrier Diode
RB481Y-40
lApplications
Rectifying small power
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.45
0.5
1.6±0.1
1.6±0.1
0.22±0.05
1.55
(3)
1.2±0.1
(4)
3)High reliability.
1.6±0.1
1.6±0.05
lFeatures
1)Ultra small mold type. (EMD4)
2)Low VF
0.13±0.05
1.0
0～0.1
EMD4
(1)
lConstruction
Silicon epitaxial planar
(2)
0.5
lStructure
0.5
1.0±0.1
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
week code
1Pin Mark
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive peak)
40
VR
Reverse voltage (DC)
40
Average rectified forward current (*1)
200
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*2)
1
Junction temperature
125
Tj
Storage temperature
-40 to +125
Tstg
(*1) Rating of per diode:1/2 Io (*2) Rating of per diode
lElectrical characteristics (Ta=25C)
Parameter
Symbol
Forward voltage
Reverse current
Min.
Typ.
VF1
-
VF2
IR1
-
IR2
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Unit
V
V
mA
A
C
C
Max.
Unit
-
0.3
V
IF=10mA
-
0.45
V
IF=100mA
-
-
20.0
μA
-
-
90.0
μA
VR=10V
VR=40V
1/4
Conditions
2011.10 - Rev.A
Data Sheet
RB481Y-40
1000
100000
Ta=150°C
10000
100
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(mA)
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
10
Ta=125°C
1000
Ta=75°C
100
Ta=25°C
10
1
Ta=-25°C
0.1
Ta=-25°C
0.01
1
0
100
200
300
400
500
0
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
20
100
40
420
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
Ta=25°C
IF=100mA
n=30pcs
410
400
390
AVE:397.1mV
380
370
1
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
100
Ta=25°C
VR=40V
n=30pcs
80
70
60
50
40
30
20
28
27
26
AVE:27.2pF
25
24
23
22
AVE:6.86mA
10
21
0
20
Ct DISPERSION MAP
IR DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
n=10pcs
29
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:VR(mA)
90
2/4
2011.10 - Rev.A
Data Sheet
RB481Y-40
20
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
15
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
8.3ms
10
5
Ta=25°C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
15
10
AVE:6.5ns
5
AVE:5.60A
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
10
10
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
5
time
5
0
0
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0.3
1000
0.25
D.C.
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
Rth(j-c)
100
D=1/2
0.2
Sin(θ＝180)
0.15
0.1
0.05
10
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:(s)
Rth-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
0.05
0.1 0.15 0.2 0.25 0.3
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
0.35
0.4
2011.10 - Rev.A
Data Sheet
RB481Y-40
0.35
0.5
0.3
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
REVERSE POWER
DISSIPATION:PR (w)
0.4
0.25
0.2
D.C.
0.15
D=1/2
0.1
Sin(θ＝180)
0A
Io
0V
VR
t
D.C.
T
0.3
D=t/T
VR=20V
Tj=125°C
D=1/2
0.2
Sin(θ＝180)
0.1
0.05
0
0
0
10
20
30
0
40
REVERSE VOLTAGE：VR(V)
VR-PR CHARACTERISTICS
0V
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
T
D=t/T
VR=20V
Tj=125°C
D.C.
0.3
D=1/2
0.2
Sin(θ＝180)
0.1
0
AVE:21.42kV
15
10
0
75
100
125
CASE TEMPERATURE：Tc(°C)
DERATING CURVE(Io-Tc)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
125
20
5
50
100
VR
t
0.4
25
75
25
Io
0A
0
50
AMBIENT TEMPERATURE：Ta(°C)
DERATING CURVE(Io-Ta)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0.5
25
AVE:2.25kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A