Data Sheet 10V Drive Nch MOSFET RCD060N25 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 2.5 0.75 9.5 1.5 (SC-63) <SOT-428> (1) (2) (3) 0.8Min. 0.65 0.9 2.3 2.3 0.5 1.0 Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RCD060N25 Type Inner circuit Taping TL 2500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Drain current Source current (Body Diode) ∗1 (1) Gate (2) Drain (3) Source Limits Unit 250 30 V V Continuous Pulsed Continuous ID *3 IDP *1,3 IS 6 24 6 A A A Pulsed ISP 24 A 3 2.62 A mJ Avalanche current Avalanche energy *1 Power dissipation IAS *2 EAS *2 PD *4 Channel temperature Range of storage temperature Tch Tstg 20 W 150 55 to 150 C C Limits 6.25 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.11 - Rev.A Data Sheet RCD060N25 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 250 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 10 A VDS=250V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 410 530 l Yfs l* 2.2 - - S VDS=10V, ID=3A Input capacitance Ciss - 840 - pF VDS=25V Output capacitance Coss - 50 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * tr * - 22 - ns VDD 125V, ID=3A - 20 - ns VGS=10V td(off) * tf * - 30 - ns RL=41.67 - 13 - ns RG=10 Qg * Qgs * Qgd * - 15 - nC VDD 125V, ID=6A - 6 6 - nC nC VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=3A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=6A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.11 - Rev.A Data Sheet RCD060N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 2 6 Ta=25°C Pulsed Ta=25°C Pulsed 5 VGS=10.0V VGS=10.0V VGS=8.0V VGS=8.0V 1 Drain Current : ID [A] Drain Current : ID [A] 1.5 VGS=7.0V 4 3 2 VGS=7.0V 0.5 1 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 10 8 10 6 VDS=10V pulsed 1 VDS=10V ID=1mA pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Gate Threshold Voltage VGS(th) [V] Drain Currnt : ID [A] 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 0.1 0.01 5 4 3 0.001 2 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 10 1.5 VGS=10V pulsed VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Static Drain-Source On-State Resistance RDS(on) [Ω] 4 Drain-Source Voltage : VDS [V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 1 ID=6A 0.5 ID=3A 0 0.1 1 10 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.11 - Rev.A Data Sheet RCD060N25 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 10 10 VGS=0V pulsed Source Current : Is [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0.1 1 10 0.0 0.5 Drain Current : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2.0 10000 VDD=125V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C pulsed 1300 1000 1100 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mW] 1.5 Fig.10 Switching Characteristics 1500 ID=6.0A 900 ID=3.0A 700 500 tf 100 td(off) td(on) 10 tr 300 100 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 15 10000 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=125V ID=6A Pulsed 1000 10 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.0 Source-Drain Voltage : VSD [V] 5 Ciss 100 Coss 10 Crss 1 0 0 5 10 15 20 0.01 25 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 Drain-Source Voltage : VDS [V] 4/6 2011.11 - Rev.A RCD060N25 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed 100 10 0 1 10 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.11 - Rev.A Data Sheet RCD060N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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