CEC3172

CEC3172
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
D
30V, 26A, RDS(ON) = 20mΩ @VGS = 10V.
RDS(ON) = 32mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
G
High power and current handing capability.
Lead-free plating ; RoHS compliant.
S
D D
6
5
D D
7
8
Bottom View
DFN3*3
ABSOLUTE MAXIMUM RATINGS
4
3
2
1
G S S S
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
Parameter
VGS
±20
V
Drain [email protected]
ID
26
A
@RθJA
Drain Current-Pulsed [email protected]
ID
9
A
IDM
92
A
@RθJA
IDM
36
A
Maximum Power Dissipation
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
b
Thermal Resistance, Junction-to-Ambient b
RθJc
6
C/W
RθJA
50
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2013.Feb
http://www.cetsemi.com
CEC3172
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 30V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 6.3A
1
14
20
mΩ
VGS = 4.5V, ID =5A
24
32
mΩ
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
590
pF
125
pF
95
pF
10
ns
4
ns
25
ns
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 7A,
VGS= 10V, RGEN= 3Ω
Turn-Off Fall Time
tf
4
ns
Total Gate Charge
Qg
13
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
3.5
nC
VDS = 15V, ID = 7A,
VGS = 10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
1.25
A
1.2
V
CEC3172
25
15
25 C
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6V
VGS=4V
15
10
VGS=3V
5
12
9
6
3
0
1
2
3
4
5
0
4
5
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
3
Figure 1. Output Characteristics
Ciss
600
450
300
Coss
150
Crss
0
0
3
6
9
12
15
2.2
1.9
ID=30A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
2
VGS, Gate-to-Source Voltage (V)
750
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1
VDS, Drain-to-Source Voltage (V)
900
1.2
-55 C
0
0
1.3
TJ=125 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
2
1
0
0.4
150
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=15V
ID=7A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEC3172
6
4
2
0
0
3
6
9
12
RDS(ON)Limit
10ms
10
1
100ms
1s
DC
10
10
10
15
2
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 10. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2