CEM4412S1

CEM4412S1
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V , 7A , RDS(ON)=28m Ω @VGS=10V.
RDS(ON)=42m Ω
@VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
D
D
D
D
8
7
6
5
High power and current handling capability.
Surface mount package.
SO-8
1
2
3
4
S
S
S
G
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Parameter
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
Ć20
V
ID
Ć7
A
IDM
Ć 30
A
Drain Current-Continuous
-Pulsed
15
Limit
@TJ=125 C
Drain-Source Diode Forward Current
IS
2.3
A
Maximum Power Dissipation
PD
2.5
W
TJ, TSTG
-55 to 150
C
RįJA
50
C /W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
15-22
CEM4412S1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V,ID = 250µA
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
VDS = 30V, VGS = 0V
VGS = Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
On-State Drain Current
ID(ON)
g FS
Min Typ Max Unit
OFF CHARACTERISTICS
30
V
10
µA
Ć100
nA
1.5
3
V
VGS = 10V,ID = 7A
20
28
mΩ
VGS =4.5V,ID = 3.5A
28
42
mΩ
ON CHARACTERISTICS b
Forward Transconductance
VGS = 10V, VDS = 5V
VDS = 15V,ID = 7A
1
A
30
16
S
DYNAMIC CHARACTERISTICS c
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS =15V, VGS = 0V
f =1.0MHZ
707
920
PF
355
460
PF
89
120
PF
8
15
ns
11
20
ns
35
55
ns
17
28
ns
23
29
nC
c
tD(ON)
t
tD(OFF)
VDD = 25V,
ID = 1A,
VGEN = 10V,
RGEN = 6Ω
Fall Time
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =15V, ID = 2A,
VGS =10V
15-23
3
nC
4
nC
15
CEM4412S1
BODY DIODE & SCHOTTKY DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Condition
Min Typ Max Unit
0.76 1.1
V
0.55
V
1
A
DRAIN-SOURCE DIODE CHARACTERISTICS b
Body Diode Forward Voltage
VSD
VGS = 0V, Is =2.0A
Schottky Forward Voltage
VF
IF=2A, Tc=25 C
Average Forward Rectified Current
IF(AV)
Notes
a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
25
30
VGS=10,9,8,7,6,5V
VGS=4V
24
ID, Drain Current (A)
ID, Drain Current (A)
20
15
10
VGS=3V
5
0
0.5
1.0
1.5
2.0
2.5
-55 C
Tj=125 C
6
25 C
0.0
3.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.06
RDS(ON), On-Resistance(Ohms)
1800
1500
C, Capacitance (pF)
12
0
0
15
18
1200
900
Ciss
600
Coss
300
Crss
0
0
5
10
15
20
25
VGS=10V
0.05
0.04
Tj=125 C
0.03
25 C
0.02
-55 C
0.01
0
0
30
5
10
15
20
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
15-24
1.09
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
CEM4412S1
VDS=VGS
ID=250ijA
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75 100 125 150
1.15
ID=-250ijA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
50
75 100 125 150
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
25
30.0
VDS=15V
-Is, Source-drain current (A)
gFS, Transconductance (S)
25
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
20
15
10
5
10.0
1.0
0
0
5
10
15
20
0.4
0.6
IDS, Drain-Source Current (A)
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
50
VDS=15V
ID=2A
8
-ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
0
6
4
2
0
10
RD
3
6
9
12 15
18
21 24
Qg, Total Gate Charge (nC)
)L
im
it
10m
100
11
s
ms
1s
DC
15
VGS=10V
Single Pulse
TA=25 C
0.1
0.03
0
ON
S(
0.1
1
10
30 50
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
15-25
CEM4412S1
VDD
t on
td(on)
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
Duty Cycle=0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = PDM* RįJA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
15
15-26
10
100