CEV2309

CEV2309
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V.
RDS(ON) = 300mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-323 package.
G
D
S
G
S
SOT-323(SC-70)
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-20
Units
V
Gate-Source Voltage
VGS
±8
V
ID
-1.2
A
IDM
-4.8
A
PD
0.25
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
375
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.Oct
http://www.cetsemi.com
CEV2309
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -20V, VGS = 0V
-1
µA
IGSSF
VGS = 8V, VDS = 0V
100
nA
IGSSR
VGS = -8V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = VDS, ID = -250µA
-1
V
VGS = -4.5V, ID = -1.2A
135
165
mΩ
VGS = -2.5V, ID = -1A
230
300
mΩ
VDS = -5V, ID = -1.2A
4
320
S
pF
110
pF
75
pF
VDS = -6V, VGS = 0V,
f = 1.0 MHz
-0.4
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -6V, ID= -1A,
VGS = -4.5V, RGEN = 6Ω
10
20
ns
4
8
ns
ns
20
40
Turn-Off Fall Time
tf
5
10
ns
Total Gate Charge
Qg
3
4
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -6V, ID = -1.2A,
VGS = -4.5V
0.46
nC
0.75
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
-1.2
A
-1.2
V
7
CEV2309
5
5
25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=4.5,3.5,3V
4
-VGS=2.5V
3
-VGS=2V
2
1
4
3
2
1
-VGS=1.5V
TJ=125 C
0
0
1
2
3
4
5
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
2.0
2.5
3.0
Figure 2. Transfer Characteristics
280
210
140
Coss
70
Crss
1.6
0
3
6
9
12
ID=-1.2A
VGS=-4.5V
1.2
0.8
0.4
0
-100
0
15
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
1.5
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.0
-VGS, Gate-to-Source Voltage (V)
350
1.2
0.5
-VDS, Drain-to-Source Voltage (V)
420
1.3
-55 C
0
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
0
-1
-2
0.3
0.6
0.9
1.2
1.5
1.8
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
5 V =-6V
DS
ID=-1.2A
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEV2309
4
3
2
1
10
10
0
1
2
3
RDS(ON)Limit
0
1ms
10ms
100ms
-1
DC
10
10
0
1
-2
TA=25 C
TJ=150 C
Single Pulse
-3
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
td(off)
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360 C/W
0.02
3. TJM ± TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
100
600
2
7