CEH3688

CEH3688
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V.
RDS(ON) = 100mΩ @VGS = 4.5V.
RDS(ON) = 155mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
D1
6
S1
5
D2
4
1
G1
2
S2
3
G2
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±12
V
ID
3
A
IDM
12
A
PD
1.14
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
110
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.July
http://www.cetsemi.com
CEH3688
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current
Typ
Max
Units
VDS = 24V, VGS = 0V
1
µA
IGSS
VGS = ±12V, VDS = 0V
±100
nA
VGS(th)
VGS = VDS, ID = 250µA
Off Characteristics
V
c
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
RDS(on)
Forwand Transconductance
Dynamic Characteristics
1.5
V
62
78
mΩ
VGS = 4.5V, ID = 3.0A
80
100
mΩ
VGS = 2.5V, ID = 2.0A
115
155
mΩ
VGS = 10V, ID = 3.4A
gFS
VDS = 5V, ID = 3.0A
0.6
4
S
255
pF
80
pF
50
pF
8
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
8
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
16
ns
3
7
ns
18
36
ns
Turn-Off Fall Time
tf
3
7
ns
Total Gate Charge
Qg
3
4
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, ID = 2.4A,
VGS = 4.5V
0.6
nC
0.9
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
1
A
1.1
V
CEH3688
3.0
12
25 C
2.5
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,4,3V
VGS=2V
2.0
1.5
1.0
9
6
3
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
4
5
6
Figure 2. Transfer Characteristics
240
180
120
Coss
60
Crss
0
0
5
10
15
20
25
2.2
1.9
ID=3.4A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
3
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
VGS, Gate-to-Source Voltage (V)
300
1.2
1
VDS, Drain-to-Source Voltage (V)
360
1.3
-55 C
TJ=125 C
0.5
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
5 V =10V
DS
ID=2.4A
10
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEH3688
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
10
10
10
10
3.0
2
1
RDS(ON)Limit
1ms
10ms
100ms
1s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
8
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
8 - 41
10
1
10
2
2