1.5V Drive Nch+SBD MOSFET ES6U2 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 zInner circuit zApplications Switching (6) (4) (5) zPackage specifications Package Type Taping Code T2R Basic ordering unit (pieces) 8000 ∗2 ES6U2 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode zAbsolute maximum ratings (Ta=25°C) (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 20 ±10 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 Unit V V A A A A ±1.5 ±3.0 0.5 3.0 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cyc. ∗2 Mounted on ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.12 - Rev.A ES6U2 Data Sheet zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) − 20 − 0.3 − − − − 1.6 − − − − − − − − − − − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − <Body diode characteristics (Source-drain)> Parameter Symbol Min. Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG= 10Ω VDD 10V, VGS= 4.5V ID= 1.5A, RL 6.7Ω RG= 10Ω ∗Pulsed Forward voltage VSD ∗ Typ. Max. − − 1.2 Unit V Conditions Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V IS= 1.5A, VGS=0V ∗Pulsed <Di> Parameter Symbol Forward voltage VF Reverse current IR www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/5 2009.12 - Rev.A ES6U2 Data Sheet zElectrical characteristics curves 1.5 1 VGS= 1.5V VGS= 1.8V VGS= 1.3V 0.5 VGS= 1.5V 1 VGS= 1.3V 0.5 0.6 0.8 0.001 0 1 2 DRAIN-SOURCE VOLTAGE : VDS[V] 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 10 0.01 10 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 VGS= 1.5V Pulsed 10 0.01 10 0.1 0.1 1 DRAIN-CURRENT : ID [A] DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/5 10 DRAIN-CURRENT : ID [A] Resistance vs. Drain Current(Ⅲ) 100 10 0.01 1 Fig.6 Static Drain-Source On-State Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 2 100 Resistance vs. Drain Current(Ⅱ) 10000 1.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 DRAIN-CURRENT : ID [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] VGS= 2.5V Pulsed Fig.5 Static Drain-Source On-State VGS= 1.8V Pulsed 1 1 1 GATE-SOURCE VOLTAGE : VGS[V] 100 Resistance vs. Drain Current(Ⅰ) 0.1 0.5 Fig.3 Typical Transfer Characteristics 10000 DRAIN-CURRENT : ID [A] 10 0.01 0 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.4 Static Drain-Source On-State 1000 8 VGS= 4.5V Pulsed 1000 100 10 0.01 6 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 1000 4 Fig.2 Typical Output Characteristics(Ⅱ) 10000 Ta= 25°C Pulsed Ta= 25°C Ta= - 25°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0.4 Ta= 125°C Ta= 75°C 0.1 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.2 Fig.1 Typical Output Characteristics(Ⅰ) 10000 1 0 0 0 VDS= 10V Pulsed VGS= 1.1V VGS= 1.2V 10000 10 Ta=25°C Pulsed VGS= 4.5V VGS= 1.8V DRAIN CURRENT : ID [A] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 2.5V DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 1.5 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.12 - Rev.A ES6U2 600 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 500 ID = 0.8A 400 ID = 1.5A 300 200 0.5 1 1.5 0 2 CAPACITANCE : C [pF] 3 2 Ta=25°C VDD = 10V ID = 1.5A RG=10Ω Pulsed 0 0 0.5 1 1.5 6 8 10 10 td(on) 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 1 4 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 4 tf 100 1 SOURCE-DRAIN VOLTAGE : VSD [V] 5 td(off) tr 0 0 Ta=25°C VDD = 10V VGS=4.5V RG=10Ω Pulsed 100 0.01 GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : Is [A] 10 Data Sheet Fig.12 Switching Characteristics Ta=25°C f=1MHz VGS=0V Ciss 100 Coss Crss 10 0.01 2 TOTAL GATE CHARGE : Qg [nC] 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage <Di> 100000 1 pulsed pulsed FORWARD CURRENT : I F (A) REVERSE CURRENT : IR (A) 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/5 2009.12 - Rev.A ES6U2 Data Sheet zMeasurement circuit Pulse Width ID VDS VGS RL 90% 50% 10% VGS 50% VDS D.U.T. 10% VDD RG 90% tr td(on) ton 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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