CED07N65A/CEU07N65A

CED07N65A/CEU07N65A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 6A, RDS(ON) = 1.45Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
Drain Current-Pulsed a
IDM
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Repetitive Avalanche Energy
Single Pulsed Avalanche Energy
S
e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
650
Units
V
±30
V
6
A
3.7
A
24
A
107
W
0.85
W/ C
EAR
0.38
mJ
EAS
216
mJ
IAS
6
A
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
1.4
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
Rev 1. 2011.July
http://www.cetsemi.com
Details are subject to change without notice .
1
CED07N65A/CEU07N65A
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
1.45
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
Static Drain-Source
On-Resistance
RDS(on)
VGS = 10V, ID = 3A
1.22
f=1MHz,open Drain
1.5
Ω
1410
pF
115
pF
15
pF
42
pF
38.5
pF
Rg
Gate input resistance
Dynamic Characteristics
Input Capacitance
2
c
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective output capacitance
energy related
Co(er)
f
Effective output capacitance g
time related
Co(tr)
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VGS = 0V,
VDS = 0V to 480V
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 6A,
VGS = 10V,RGEN = 25Ω
26
52
ns
58
85
116
170
ns
ns
Turn-Off Fall Time
tf
63
126
ns
Total Gate Charge
Qg
28
36
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 6A,
VGS = 10V
6
nC
9
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 12mH, IAS =6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while Vds is rising from 0 to 80% Vdss.
g.Co(tr) is a fixed capacitance that gives the same charging time as Coss while Vds is rising from 0 to 80% Vdss.
2
5
A
1.5
V
CED07N65A/CEU07N65A
12
VGS=10,9,8,7V
5
ID, Drain Current (A)
ID, Drain Current (A)
6
4
3
2
VGS=4V
1
0
0
2
4
6
8
10
12
2
4
6
8
10
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
0
-55 C
Figure 1. Output Characteristics
1200
900
600
Coss
Crss
0
5
10
15
20
25
3.0
2.5
ID=3A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
TJ=125C
VGS, Gate-to-Source Voltage (V)
300
VTH, Normalized
Gate-Source Threshold Voltage
4
VDS, Drain-to-Source Voltage (V)
1500
1.2
6
0
Ciss
1.3
8
2
1800
0
10
-25
0
25
50
75
100
125
150
VGS=0V
10
0
10
-1
10
-2
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
RDS(ON)Limit
VDS=480V
ID=6A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED07N65A/CEU07N65A
6
4
2
0
0
6
12
18
24
10
100ms
1ms
10
10
30
1
10ms
DC
0
-1
TC=25 C
TJ=175 C
Single Pulse
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
PDM
0.1
-1
t1
0.05
0.02
0.01
Single Pulse
10
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3