CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit -100 Units V VGS ±20 V ID -30 A IDM -120 A 150 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 1.2 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 1 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W 2009.Nov http://www.cetsemi.com 1 CED30P10/CEU30P10 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -100V, VGS = 0V -25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -15A -1 63 76 mΩ VGS = -4.5V, ID = -8A 72 92 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -25V, VGS = 0V, f = 1.0 MHz 2550 pF 345 pF 70 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -50V, ID = -18A, VGS = -10V, RGEN= 3.3Ω 16 32 ns 7 14 ns ns 120 240 Turn-Off Fall Time tf 25 50 ns Total Gate Charge Qg 78 101 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -80V, ID = -18A, VGS = -10V 8 nC 20 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -16A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -30 A -1.2 V 5 CED30P10/CEU30P10 25 75 25 C 15 -VGS=4V 10 5 -VGS=3V 0 0.0 0.5 1.0 1.5 1 2 3 4 5 6 Figure 2. Transfer Characteristics Ciss 1000 Coss 500 Crss 0 5 10 15 20 25 2.2 1.9 ID=-16A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 Figure 1. Output Characteristics 1500 1.2 -55 C TJ=125 C 15 -VGS, Gate-to-Source Voltage (V) 2000 1.3 30 0 2500 0 45 2.5 -IS, Source-drain current (A) C, Capacitance (pF) 2.0 60 -VDS, Drain-to-Source Voltage (V) 3000 VTH, Normalized Gate-Source Threshold Voltage -ID, Drain Current (A) 20 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -ID, Drain Current (A) -VGS=10,8,7,6,5V -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =-80V DS ID=-11A 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CED30P10/CEU30P10 6 4 2 0 0 20 40 60 10 3 10 2 100ms 10 10 80 RDS(ON)Limit 1ms 10ms 1 DC TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3