TN-47-22: Designing for LV FBDIMMs Introduction Technical Note Designing for 1.5V, Low-Power FBDIMMs Introduction Today’s memory power usage may have an adverse effect on the overall system level power and server cooling requirements. This document discusses memory power trends, identifies new, low-voltage (lower-power) solutions for high-density DDR2 memory designs, and provides details for software and hardware implementation. Where Does the Memory Power Come From? Memory has migrated from simple synchronous devices to very complex, digital-state machines. Even the typical data sheet of today’s high-speed memory trumps the size of the early microprocessor data sheets. Given the complex systems, it’s no wonder more power is consumed in today’s high-density memory modules. Even with the new technology, though, we’ve seen great improvements in the power management of memory since the early days of fast-page DRAM. As shown in Figure 1, you can see how the power per bandwidth significantly decreases with the each new technology. Early SDR-133 ran at a peak bandwidth of 1.1 GB/s for a 64-bit data bus, yet it consumed well over 400mW per active device. In comparison, DDR3-1333 provides a bandwidth for a 64-bit bus of up to 10.7 GB/s but consumes about only 300mW per device. This equates to over a 90% savings in terms of W/GB/s (SDR-133 = 3.1 W/GB/s; DDR3-1333 = 230 mW/GB/s). Figure 1: Industry Power Trends for Memory 2.750 10.7GB/s 2.500 11GB/s 10GB/s 2.250 9GB/s 8.5GB/s Watts/GB per second 2.00 8GB/s 1.750 7GB/s 6.4GB/s 1.500 6GB/s 5.3GB/s 1.250 5GB/s 1.00 4GB/s 3.2GB/s 0.750 3GB/s 2.6GB/s 0.500 2GB/s 0.250 1GB/s 1.1GB/s SDR (3.3V) DDR (2.5V) DDR2 (1.8V) DDR3 (1.5V) Technology PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. All information discussed herein is provided on an “as is” basis, without warranties of any kind. TN-47-22: Designing for LV FBDIMMs Where Does the Memory Power Come From? power per-bandwidth values, the actual system-level power—due to a high memory count and extremely fast cycle times—continues to grow. It’s not uncommon for a dualchannel system, fully populated with eight FBDIMMs, to consume power in excess of 60–90 watts (see Figure 2). Figure 2: Power of a Fully Loaded FBDIMM Channel PC133 Compared to DDR2-667 FBDIMM 100 90 PC133 SDRAM 3.3V DR x4 (512Mb-based) 1.8V 80 70 Watts 60 50 40 High-speed DDR2 has over 60 percent increase in channel power as compared to PC133 30 20 10 0 Power per slot Power per channel (4 for PC133, 8 for FBDIMM) and actual usage conditions of the DRAM is probably one of the most important factors: the faster the clock, the faster the data rate, the higher the power use. Other factors include whether or not open pages are utilized, the use of special power-down and standby modes—which are initiated with clock enable (CKE), how many slots are populated, and the module configuration types. For example, a 2GB FBDIMM can be built at least two ways and each results in different power consumption. One method uses 512Mb (128 Meg x 4) devices; another uses 1Gb (128 Meg x 8) devices. The 512Mb-based module requires 36 DRAM, making it a dualrank, x4 module. By contrast, the 1Gb-based module only requires 18 DRAM, making it a dual-rank, x8 module. The 1Gb-based module provides the same density at the same speed, but reduces individual module power by approximately 30% (see Figure 3 on page 3). PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved What is an LV FBDIMM? Figure 3: Comparison of 2GB FBDIMM: 512Mb-Based (Dual-Rank, x4) to 1Gb-Based (Dual-Rank, x8) 2GB FBDIMM Power at DDR2-667 14 Total FBDIMM power per slot 12 DRAM power per slot Watts 10 8 Reduced chip count modules provide some help with power reduction 6 4 2 0 512Mb-based (dual-rank, x4), 1.8V 1Gb-based (dual-rank, x8), 1.8V loaded (1.8V) FBDIMM channel can still consume a large amount of power. This becomes especially important when we look at a typical data center that may host rows of server racks with hundreds of FBDIMM modules, all operating simultaneously. This model could equate to kilowatts just for memory. This is why Micron developed a line of low-voltage, low-power, 1.5V DDR2 and LV FBDIMMs. What is an LV FBDIMM? As the development leader of low-voltage DDR2 memory, Micron worked closely with JEDEC and many of the advanced memory buffer (AMB) vendors to ensure that the key AMB suppliers can support low-voltage DDR2 SDRAM. In addition, several of the major AMB suppliers are starting to release reduced-power AMBs that can be utilized with reduced-voltage DDR2 memory. The result of this effort is our LV FBDIMM (low-voltage, fully buffered, dual, in-line memory module) that runs from a true 1.5V supply rail and has a substantially lower operating power than has ever been possible with conventional 1.8V DDR2 memory. The original FBDIMM required a full 1.8V supplied to the DDR2 memory and an additional 1.5V supplied to the AMB. What’s even more amazing is that, other than the voltage change, the use of LV FBDIMMs is invisible to the system. The high-speed northbound and southbound links between the memory controller and the FBDIMM modules populated in the channel are exactly the same—they already run at 1.5V. The performance, timing, and other operating requirements for the LV FBDIMM are identical to the 1.8V FBDIMM; it just consumes considerably less power (see Figure 4 on page 4). PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved TN-47-22: Designing for LV FBDIMMs Power Advantages of Micron’s LV FBDIMMs Figure 4: LV FBDIMM Block Diagram 1.8V supply 1.5V supply Standard FBDIMM (1.8V) DRAM I/O = 1.8V AMB Core VCC = 1.5V Memory VDD = VDDQ = 1.8V AMB core (VCC = 1.5V), AMB memory I/O (VDD = 1.8V) LV FBDIMM (1.5V) DRAM I/O = 1.5V AMB Core VCC = 1.5V Memory VDD = VDDQ = 1.5V AMB core (VCC = 1.5V), AMB memory I/O (VDD = 1.5V) Power Advantages of Micron’s LV FBDIMMs where Power = Voltage × Current. The power savings from P = VI for operating DDR2 at 1.5V rather than 1.8V is about 16%. Our LV DDR2 (1.5V) has additional power savings, too, since it is designed and manufactured on our DDR3 process, which is a true 1.5V process. This process enables us to bypass the voltage regulator—which is not very efficient—and, as such, the unregulated 1.5V DDR2 memory reduces power by an additional 15–20%. An example of power savings for a 2GB LV FBDIMM (dual-rank, x8) as compared to 2GB FBDIMM 1.8V (dualrank, x8 and dual-rank, x4) is in the 30–45% range, respectively. PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved TN-47-22: Designing for LV FBDIMMs Other Advantages of Micron’s LV FBDIMMs Figure 5: Micron’s LV FBDIMM Offers Up to 45% Power Savings DRAM Die Die per Module Total Memory AMB Total per Slot Dual-rank x4 (512Mb-based) 1.8V 189.6 36 6.83 5.0 11.83 Dual-rank x8 (1Gb-based) 1.8V 176.1 18 3.17 5.0 8.17 Dual-rank x8 (1Gb-based) 1.5V 112.4 18 2.02 4.5 6.52 Est. (mW) LV FBDIMM saves up to 45% in power Estimated (W) The 1Gb-based (dual-rank, x8), 1.8V consumes 31% less power than the 512Mb-based (dual-rank, x4),1.8V module. The 1Gb-based (dual-rank, x8), 1.5V consumes 45% less power than the 512Mb-based (dual-rank, x4), 1.8V module. micron.com\powercalc. It’s easy to estimate accurately the amount of power savings for a DRAM by loading the power calculator with the 1.5V device IDD values and then changing both the test and operating voltage from 1.8V to 1.5V. Other Advantages of Micron’s LV FBDIMMs available. However, if these same systems supported LV FBDIMM, the savings from the 1.5V memory could enable the systems to be fully populated and to utilize x4-based, higher-density modules or higher-speed memory—which could extend the life of an otherwise marginally obsolete system. PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved System-Level Options with LV FBDIMMs System-Level Options with LV FBDIMMs Q = 1.5V rather than at VDDQ = 1.8V. This interface works identical to the 1.8V interface with the exception of changes to input/output voltage levels. Again, timing, speed, and general performance of the DRAM, AMB, or FBDIMM are not affected. Of course, to take advantage of the LV FBDIMM features, the system must use 1.5V DRAM and an AMB that is designed to interface with the 1.5V DRAM. Preparing to Design in LV FBDIMMs PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved Figure 6: Using Module VID Pins for Voltage Detection VID(0) pin 16 Primary side Pin 120 Pin 1 Secondary side VID(1) pin 136 Pin 240 Pin 121 Coltage identification pins (VID) on the FBDIMM module card edge Function Module pin number Logic level (OPEN) Logic level (GROUNDED) Voltage rail Pin name Memory and AMB I/O VDD VID(0) 16 1.8V 1.5V AMB core and high-speed bus VCC VID(1) 136 1.5V 1.2V Implementation of the VID Pins PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved Figure 7: Using Module VID Pins for Voltage Detection Method One LV FBDIMM LV FBDIMM LV FBDIMM LV FBDIMM LV FBDIMM LV FBDIMM VID pins from memory are routed to the memory controller, and the memory controller sets the voltage LV FBDIMM Memory Controller LV FBDIMM Voltage Regulator VID pins from memory Method Two Voltage Regulator VID pins from memory Memory Controller VID pins from memory are routed directly to the voltage controller • 1.8V memory only • 1.5V memory only • An intermediate voltage of 1.55V, which also must be backward-compatible with the 1.8V memory Byte 3 works like the VID pins because it flags different voltage options for the AMB core. Some AMB vendors may support a lower AMB core voltage. Under normal conditions and for most AMBs, this voltage is always set to 1.5V. PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved CC = 1.5V for the AMB core and VDD = 1.8V for the memory, byte 3 is programmed as 12 hex. If the module supports VCC = 1.5V for the AMB core and VDD = 1.5V for the memory, byte 3 will be programmed as 22 hex. See Figure 8 for more detail on the decoding of each bit. SPD Byte 3 Bit 7–Bit 4 Bit 3–Bit 0 VDD (memory voltage) 0001 = 1.8V 0010 = 1.5V 0011 = 1.2V 0100 = 1.55V (TBD) All others reserved VCC (AMB voltage) 0001 = 1.8V 0010 = 1.5V 0011 = 1.2V All others reserved For LV FBDIMM with standard voltage AMB, byte 3 equals 22 hex For a platform that supports dual voltages and uses the SPD to detect the memory voltage, the system must read the status of byte 3 and then condition the power as required. There are three ways to accomplish this: 1. The system can power up only the SMBus without providing a power source to the memory, read the status of byte 3, then configure the power for either the standard memory voltage level or the optional, low-voltage level of 1.5V. The system can then power-up the complete FBDIMM with the correct memory voltage, as determined by the contents of byte 3 in the SPD. 2. A second method is to power up the complete FBDIMM module with the memory voltage set to the standard voltage level of 1.8V. As part of the normal sequence, the system will read the contents of the SPD and configure the memory timing, loading, and other as required. If the system detects that byte 3 has been set for the reduced voltage level, the system will reset and cycle the memory voltage to 1.5V and restart the initialization sequence. 3. The third method is to power up the complete FBDIMM with the memory voltage set to 1.5V, read the SPD data, and then reset the voltage to 1.8V, if indicated by byte 3 in the SPD. These methods and flows are clearly identified in the following charts. PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved Figure 9: Flowchart for First Power Up of System (VDD = 1.5V or 1.8V) System power on No No Does system support dual memory voltages? Yes No System support 1.5V memory? Does system utilize VID pins? Yes Yes No Is VID(0) pulled to GND? Yes Power memory at VDD = 1.8V Power memory at VDD = 1.5V Power memory at VDD = 1.8V Power memory at VDD = 1.5V Initialize memory at VDD = 1.8V Initialize memory at VDD = 1.5V Initialize memory at VDD = 1.8V Initialize memory at VDD = 1.5V VID pins are NOT used PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved TN-47-22: Designing for LV FBDIMMs Implementation of the VID Pins Figure 10: Reading SPD Data (VID Pins not Used) VID pins are NOT used No Yes Does system read SPD before VDD ramp? No Is byte 3, bit 7–4 equal to 0010 for all slots? Yes No Is byte 3, bit 7–4 equal to 0001 for all slots? Shut down system and generate error SMBus and VDD power up simultaneously Yes Power memory at VDD = 1.8V Power memory at VDD = 1.5V Initialize memory at VDD = 1.8V Initialize memory at VDD = 1.5V TN-47-22: Designing for LV FBDIMMs Implementation of the VID Pins Figure 11: Flowchart Where SMBus and VDD Power Up Simultaneously at 1.5V SMBus and VDD power up simultaneously No Yes Does system default to VDD = 1.5V? SMBus and VDD power up simultaneously (VDD = 1.8V) No Is byte 3, bit 4–7 equal to 0010 for all slots? Yes Continue to initialize memory at VDD = 1.5V No Is byte 3, bit 4–7 equal to 0001 for all slots? Shut down system and generate error Yes Restart memory at VDD = 1.8V Reinitialize memory at VDD = 1.8V TN-47-22: Designing for LV FBDIMMs Hardware Implementation Figure 12: Flowchart Where SMBus and VDD Power Up Simultaneously at 1.8V SMBus and VDD power up simultaneously (VDD = 1.8V) No No Is byte 3, bit 4–7 equal to 0010 for all slots? Shut down system and generate error Is byte 3, bit 7–4 equal to 0001 for all slots? Yes Yes Restart memory at VDD = 1.5V Re-initialize memory at VDD = 1.5V Continue to initialize memory at VDD = 1.8V Hardware Implementation OUT or VDD) to 1.5V rather than 1.8V. The examples are intended to show the simplicity of the changes and are not meant to be exact guidelines for changing over any platform to support only 1.5V memory. Typically, memory power is controlled by a high-resolution voltage regulator (first stage) that drives high current output drivers (second stage). Second stage drivers usually include switching type regulators that ensure an even distribution of power through multiple sources. The second stage remains about the same in terms of circuit design, regardless of memory voltage, but varies somewhat by manufacturer or the type of voltage controller used. Likewise, the primary higher resolution voltage controllers operate about the same between vendors. Each controller has a method for selecting the output voltage level and each has a method for interfacing with the second stage devices. Some first stages will be controlled by an analog circuit that biases the internal circuits for an exact output level. Other first stage controllers will be digitally controlled by logic levels present on input VID pins. Finally, some controllers may rely on a combination of digital and analog techniques for selecting the output voltage level. Any of these methods provide the user with the ability to adjust the output voltage levels. TN-47-22: Designing for LV FBDIMMs Understanding Analog-Type Voltage Regulators Figure 13: Simplified Block Diagram of the Memory Voltage Controller Stage 1 Stage 2 Voltage FB V(source) Driver Controller Driver Control Current FB VOUT = VDD Voltage Controller V(source) Current FB Driver Control Driver Controller Understanding Analog-Type Voltage Regulators TN-47-22: Designing for LV FBDIMMs Understanding Analog-Type Voltage Regulators 800µA through it. On the reference side of the 1.24K resistor, the voltage level is 800mV, so with 800µA through the 1.24K resistor, the VOUT level is ~1.8V [800mV + (1.24K x 800µA)]. Typical 1.8V Bias for Analog-Type of Controller V(OUT) = 1.8V R2 = 1.24KΩ + - I(REF) = 800µA V(REF) = 800mV Voltage Controller R1 = 1KΩ V(2) = V(OUT) - V(REF) = 1.8V - 800mV = 1V R(2) = V(2) ÷ 800µA = 1V ÷ 800µA = 1.25KΩ V(OUT) Actual = [R(1) + (R2)] × I(REF) = 1,240Ω × 800µA = 1.792V For analog-type devices, changing the output drive level (memory voltage) from 1.8V to 1.5V is just a matter of changing resistor values on the voltage divider network. We can either use the 1K resistor on the lower leg of the network for a constant 800µA, or we can change the lower leg resistor to adjust the current value. Seeing that a 1Kresistor is a very common 1% resistor value, for this example, let’s assume R1 will continue to be 1K. We know the lower leg (R1) of the voltage divider will always have V1 = 800mV, and if we keep the 1Kresistor, there will continue to be 800µA of current. We can solve for the value of the top leg (R2) of the divider by using Ohm’s law: R2 = V2/I2 where V2 = 700mV (1.5V - 800mV) and I2 = 800µA This makes R2 equal to 875. But 875is not a standard 1% resistor size (standard sizes include 866 and 887). V(OUT), using the closest value of 866, would be ~1.492V; V(OUT), using 887would produce a voltage level of ~1.5096V. If this value is not precise enough for your design, the value of R1 can be changed as well. Figure 15 illustrates this example of changing an analog-type regulator to provide 1.5V rather than 1.8V. TN-47-22: Designing for LV FBDIMMs Changing the Output Voltage on Digital-Type Voltage Regulators Figure 15: Example of Changing Analog-Type of Controller to 1.5V V(OUT) = 1.5096V R2 = 887Ω V(2) = V(OUT) - V(REF) = 1.5V - 800mV = 700mV + R(2) = V(2) ÷ 800µA = 700mV ÷ 800µA = 875Ω I(REF) = 800µA - V(REF) = 800mV Voltage Controller R1 = 1KΩ Ω V(OUT) Actual = [R(1) + (R2)] × I(REF) = 1,887 ohm × 800µA = 1.5096V Alternately, R1 could be changed if needed to fine tune V(OUT). For example: R1 = 988Ω I(REF) = V(REF) ÷ R(1) = 800mV ÷ 988Ω = 809.7µA R(2) = V(2) ÷ 809.7µA V(OUT) Actual = [R(1) + (R2)] × I(REF) = 700mV ÷ 809.7µA = 1,854Ω × 809.7µA = 866Ω = 1.5012V Both 988Ω and 866Ω are standard values for 1% resistors. Changing the Output Voltage on Digital-Type Voltage Regulators TN-47-22: Designing for LV FBDIMMs Changing the Output Voltage on Digital-Type Voltage Regulators Figure 16: Example of Digital Controller Set to 1.8V + R(2) = 4,420Ω Digital-to-analog converter V(REF) = VID logic R(1) = 9,880Ω VID(0) V(PULL-UP) = 5V VID(1) VID(2) VID(3) VID(4) V(PULL-DOWN) = GND Voltage Controller V(OUT) = 1.80V R1 = 9,880Ω R2 = 4,420Ω V(REF) = 1.25V I(REF) = V(REF) ÷ R(1) = 1.25V ÷ 9,880Ω = 126.5µA V(OUT) Actual = [R(1) + (R2)] × I(REF) = 14,300Ω × 126.5µA = 1.809V + V(REF) = VID logic R(1) = 9,880Ω R(2) = 1,978Ω Digital to analog converter Figure 17: Example of Changing a Digital Controller to 1.5V Using Different Resistor Values VID(0) V(PULL-UP) = 5V VID(1) VID(2) VID(3) VID(4) V(PULL-DOWN) = GND Voltage Controller V(OUT) = 1.50V R1 = 9,880Ω I(REF) V(REF) = 1.25V = V(REF) ÷ R(1) = 1.25V ÷ 9,880Ω = 126.5µA V(2) = V(OUT) - V(REF)R(2) = 1.5V - 1.25V = 250mV V(OUT) Actual = V(2) ÷ I(REF) = 250mV ÷ 126.5µA = 1,976Ω = [R(1) + (R2)] × I(REF) = 11,858Ω × 126.5µA = 1.500V 1,976Ω is not a standard 1% resistor value, so the next closest (1,978Ω). TN-47-22: Designing for LV FBDIMMs Changing the Output Voltage on Digital-Type Voltage Regulators Figure 18: Example of Digital Voltage Regulator Set (by VID Pins) to V(OUT) = 1.8V VID = 0Ehex + R(1) = 9,880Ω Digital-to-analog converter V(REF) = VID logic VID(0) V(PULL-UP) = 5V VID(1) VID(2) VID(3) VID(4) V(PULL-DOWN) = GND Voltage Controller R(2) = 4,420Ω V(OUT) = 1.80V R1 = 9,880Ω R2 = 4,420Ω V(REF) = 1.50V I(REF) = V(REF) ÷ R(1) = 1.50V ÷ 9,880Ω = 151.8µA V(OUT) Actual = [R(1) + (R2)] × I(REF) = 14,300Ω × 151.8µA = 1.800V Figure 19: Example of Setting Memory Voltage (by VID Pins) on a Digital Regulator + V(REF) = VID logic R(1) = 9,880Ω Digital-to-analog converter VID = 19 hex VID(0) VID(1) V(PULL-UP) = 5V VID(2) VID(3) VID(4) V(PULL-DOWN) = GND Voltage Controller R(2) = 4,420Ω V(OUT) = 1.50V R1 = 9,880Ω R2 = 4,420Ω V(REF) = 1.25V I(REF) = V(REF) ÷ R(1) = 1.25V ÷ 9,880Ω = 126.6µA V(OUT) Actual = [R(1) + (R2)] × I(REF) = 14,300Ω × 126.5µA = 1.500V 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 [email protected] www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722_1.5v_fbdimm_design.fm - Rev A 5/4/11 EN 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved.